arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 1707.09620cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-el
收藏

二维Dirac带引起的ZrSiS中平坦的光学电导

Flat optical conductivity in ZrSiS due to two-dimensional Dirac bands

M. B. Schilling, L. M. Schoop, B. V. Lotsch, M. Dressel, A. V. Pronin

摘要:

ZrSiS在250 ~ 2500 cm $^{-1}$(30 ~ 300 meV)的宽范围内表现出与频率无关的带间电导率$σ(ω) = \rm{const}(ω) \equiv σ_{\rm{flat}}$。这使得ZrSiS类似于(准)二维狄拉克电子系统,如石墨和石墨烯。我们将平坦的光学电导率归因于费米能级附近的准二维狄拉克带之间的跃迁。与石墨烯相反,$σ_{\rm{flat}}$不应该是通用的,而是与倒易空间中的节线$k_{0}$的长度有关。当$σ_{\rm{flat}}$和$k_{0}$通过一个简单的模型连接时,我们发现实验和理论之间有很好的一致性。由于自旋-轨道耦合,讨论的Dirac带在ZrSiS具有一个小的间隙$Δ$,我们确定了上限max($Δ$)= 30 meV从我们的光学测量。在低温下,动量弛豫速率崩溃,并且动量弛豫的特征长度尺度在50 K以下为微米量级。

英文摘要:

ZrSiS exhibits a frequency-independent interband conductivity $σ(ω) = \rm{const}(ω) \equiv σ_{\rm{flat}}$ in a broad range from 250 to 2500 cm$^{-1}$ (30 - 300 meV). This makes ZrSiS similar to (quasi)two-dimensional Dirac electron systems, such as graphite and graphene. We assign the flat optical conductivity to the transitions between quasi-two-dimensional Dirac bands near the Fermi level. In contrast to graphene, $σ_{\rm{flat}}$ is not supposed to be universal but related to the length of the nodal line in the reciprocal space, $k_{0}$. When $σ_{\rm{flat}}$ and $k_{0}$ are connected by a simple model, we find good agreement between experiment and theory. Due to the spin-orbit coupling, the discussed Dirac bands in ZrSiS possess a small gap $Δ$, for which we determine an upper bound max($Δ$) = 30 meV from our optical measurements. At low temperatures the momentum-relaxation rate collapses, and the characteristic length scale of momentum relaxation is of the order of microns below 50 K.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑