Spatial and time scales of spin density fluctuations (SDF) were analyzed in 3d ferromagnets using ab initio linear response calculations of complete wavevector and energy dependence of the dynamic spin susceptibility tensor. We demonstrate that SDF are spread continuously over the entire Brillouin zone and while majority of them reside within the 3d bandwidth, a significant amount comes from much higher energies. A validity of the adiabatic approximation in spin dynamics is discussed. The SDF spectrum is shown to have two main constituents: a minor low-energy spin wave contribution and a much larger high-energy component from more localized excitations. Using the fluctuation-dissipation theorem (FDT), the on-site spin correlator (SC) and the related effective fluctuating moment were properly evaluated and their universal dependence on the 3d band population is further discussed.
We show that the critique of our recent papers presented in the abovementioned paper (NS) appeals to an incorrect mathematical analogy between electrical circuits and linear magnetization dynamics, improperly uses classical concepts of normal modes and basic equations, gives inconsistent results and therefore comes to incorrect conclusions.
In a recent article (Phys. Rev. B 71, 224402 (2005)), Safonov and Bertram claim "inconsistent" results can occur when applying the "Callen-Welton fluctuation dissipation theorem" to magnetic systems with dissipation. This author strongly disputes these claims, and instead will show that the inconsistencies claimed by Safonov and Bertram stem solely from a failure to correctly complete a linear transformation of variables, and a concomitant invalid application of well known fluctuation dissipation relations. When used correctly, such fluctuation-dissipation relations most certainly will apply t…
We report the electromotive force (EMF) properties generated in 3d-transition ferromagnetic metal (FM = Fe, Co, and Ni80Fe20) films themselves under their ferromagnetic resonance (FMR). For Fe and Co films, the EMF due to the anomalous-Hall effect is dominantly generated under their FMR. Meanwhile, for a Ni80Fe20 film, the EMF due to the inverse spin-Hall effect in the Ni80Fe20 film itself under the FMR is mainly generated. This tendency is qualitatively explained with differences of the spin polarization, the spin Hall conductivity, the anomalous Hall conductivity, the magnetization saturatio…
We demonstrate the spin valve effect by ballistic transport in fully epitaxial MnAs ferromagnetic metal / GaAs semiconductor / GaAs:MnAs granular hybrid heterostructures. The GaAs:MnAs material contains ferromagnetic MnAs nanoparticles in a GaAs matrix, and acts as a spin injector and a spin detector. Although the barrier height of the GaAs/MnAs interface was found to be very small, relatively large magnetoresistance was observed. This result shows that by using ballistic transport, we can realize a large spin valve effect without inserting a high tunnel barrier at the ferromagnetic metal / se…
We compute the Gilbert damping in (Ga,Mn)As based on the scattering theory of magnetization relaxation. The disorder scattering is included non-perturbatively. In the clean limit, the spin-pumping from the localized d-electrons to the itinerant holes dominates the relaxation processes. In the diffusive regime, the breathing Fermi-surface effect is balanced by the effects of interband scattering, which cause the Gilbert damping constant to saturate at around 0.005. In small samples, the system shape induces a large anisotropy in the Gilbert damping.
Two-dimensional (2D) ferromagnetic materials present promising candidates for spintronic devices, and the half-metallic materials with 100% spin polarization at Fermi energy level are highly desired for many spin-based devices. 2D Janus materials have attracted great attention in recent years due to their excellent properties induced by breaking the symmetry. Here, using the density functional theory, we report that the Janus V2AsP monolayer demonstrates a charming ferromagnetic half-metallic feature. It is dynamically stable in view of the absence of imaginary frequency phonon. The half-metal…
The methodology used to obtain the values of the spin-orbit couplings from the spin expectation values from perturbation theory was incorrect. As a result Figs. 2 and 3 are incorrect.
In this work we constructed a two-dimensional numerical model for calculation of the stripline ferromagnetic resonance (FMR) response of metallic ferromagnetic films. We also conducted numerical calculations by using this software. The calculations demonstrated that the eddy current contribution to the FMR response decreases with a decrease in the stripline width. The most important manifestations of the conductivity (eddy current) effect are excitation of the higher-order standing spin waves across the film thickness in the materials for which the standing spin wave peaks would be absent in c…
We study the magnetic coupling between different ferromagnetic metals (FMs) across a graphene (G) layer, and the role of graphene as a thin covalent spacer. Starting with G grown on a FM substrate (Ni or Co), we deposit on top at room temperature different FM metals (Fe, Ni, Co). By measuring the dichroic effect of 3p photoemission lines we detect the magnetization of the substrate and the sign of the exchange coupling in FM overlayer at room temperature. We show that the G layer magnetically decouples the FM metals.
The physical properties of manganites depend strongly on sample morphology, probably due to strain. We investigate the influence of NdGaO3 substrates on the limit of the ferromagnetic-metallic phase field in La1-xCaxMnO3, doping with x=1% resolution. Films with x=0.40 show a metal-insulator transition, but the ferromagnetic volume fraction is half the spin aligned value. Films with x=0.41 are similar but the metal-insulator transition is not always seen. Films with x=0.42, 0.43, 0.44, 0.45 are insulating, and the magnetization is dramatically reduced. The observed phase boundary indicates wher…
Two-dimensional chromium oxide fluoride CrOF sheet was studied based on density functional theory. The investigation indicates that the CrOF sheet is an intrinsic ferromagnetic semiconductor. The calculated low cleavage energy implies that the ferromagnetic semiconductor can be exfoliated from its bulk form. The corresponding Curie temperature is 150 K. In particular, the Curie temperature increases up to 410 K under hole doping and the CrOF sheet becomes a half-metal. The versatile electronic and magnetic properties indicate that the two-dimensional CrOF sheet can be a promising candidate for…
We report room temperature electrical detection of spin injection from a ferromagnetic insulator (YIG) into a ferromagnetic metal (Permalloy, Py). Non-equilibrium spins with both static and precessional spin polarizations are dynamically generated by the ferromagnetic resonance of YIG magnetization, and electrically detected by Py as dc and ac spin currents, respectively. The dc spin current is electrically detected via the inverse spin Hall effect of Py, while the ac spin current is converted to a dc voltage via the spin rectification effect of Py which is resonantly enhanced by dynamic excha…
We present theoretical description of conduction electrons interacting with a domain wall in ferromagnetic metals. The description takes into account interaction between electrons. Within the semiclassical approximation we calculate the spin and charge distributions, particularly their modification by the domain wall. In the same approximation we calculate local transport characteristics, including relaxation times and charge and spin conductivities. It is shown that these parameters are significantly modified near the wall and this modification depends on electron-electron interaction.
It is generally believed that Veselago's criterion for negative refraction cannot be fulfilled in natural materials. However, considering imaginary parts of the permittivity (ε) and permeability (μ) and for metals at not too high frequencies the general condition for negative refraction becomes extremely simple: Re(μ) < 0 --> Re(n) < 0. Here we demonstrate experimentally that in such natural metals as pure Co and FeCo alloy the negative values of the refractive index are achieved close to the frequency of the ferromagnetic resonance. Large values of the negative refraction can be obtained at r…
We report magnetization and magetoresistance measurements in hybrid ferromagnetic metal/semiconductor heterostructures comprised of MnAs/(Ga,Mn)As bilayers. Our measurements show that the (metallic) MnAs and (semiconducting) (Ga,Mn)As layers are exchange coupled, re- sulting in an exchange biasing of the magnetically softer (Ga,Mn)As layer that weakens with layer thickness. Magnetoresistance measurements in the current-perpendicular-to-the-plane geometry show a spin valve effect in these self-exchange biased bilayers. Similar measurements in MnAs/p- GaAs/(Ga,Mn)As trilayers show that the excha…
Spin transport equations in a non-homogeneous ferromagnet are derived in the limit where the sd exchange coupling between the electrons in the conduction band and those in the d band is dominant. It is shown that spin diffusion in ferromagnets assumes a tensor form. The diagonal terms are renormalized with respect to that in normal metals and enhances the dissipation in the magnetic system while the off-diagonal terms renormalize the precessional frequency of the conduction electrons and enhances the non-adiabatic spin torque. To demonstrate the new physics in our theory, we show that self-con…
We describe a systematic study of the exchange coupling between a magnetically hard metallic ferromagnet (MnAs) and a magnetically soft ferromagnetic semiconductor (GaMnAs) in bilayer and trilayer heterostructures. An exchange spring model of MnAs/GaMnAs bilayers accounts for the variation of the exchange bias field with layer thickness and composition. We also present evidence for hole-mediated interlayer exchange coupling in MnAs/p-GaAs/\GaMnAs trilayers and study the dependence of the exchange bias field on the thickness of the spacer layer.
The realization of multiferroics in nanostructures, combined with a large electric dipole and ferromagnetic ordering, could lead to new applications, such as high-density multi-state data storage. Although multiferroics have been broadly studied for decades, ferromagnetic ferroelectricity is rarely explored, especially in two-dimensional (2D) systems. Here we report the discovery of 2D ferromagnetic ferroelectricity in layered transition metal halide systems. On the basis of first-principles calculations, we reveal that charged CrBr3 monolayer exhibits in-plane multiferroicity, which is ensure…
Diluted ferromagnetic III-V semiconductors typically show a high degree of compensation. Compensation is connected to the presence of comparable densities of charged defects of either sign. This naturally leads to the development of strong correlations between defect positions during growth and annealing. We show that these correlations are required to understand the experimentally observed transport and magnetic properties as well as the persistence of the energy gap upon doping with magnetic ions.
We show that a thermally excited spin-current naturally appears in metals with embedded ferromagnetic nanoclusters. When such materials are subjected to a magnetic field, a spin current can be generated by a temperature gradient across the sample as a signature of electron-hole symmetry breaking in a metal due to the electron spin-flip scattering from polarised magnetic moments. Such a spin current can be observed via a giant magneto-thermopower which tracks the polarisation state of the magnetic subsystem and is proportional to the magnetoresistance. Our theory explains the recent experiment …
We prepared Li0.5Mn0.5Fe2O4 ferrite through chemical reaction in highly acidic solution and subsequent sintering of chemical routed powder at temperatures > 800 0C. Surface morphology showed plastoferrite character for sintering temperature > 1000 0C. Mechanical softening of metal-oxygen bonds at higher measurement temperatures stimulated delocalization of charge carriers, which were strongly localized in A and B sites of the spinel structure at lower temperatures. The charge delocalization process has activated semiconductor to metallic transition in ac conductivity curves, obeyed by Jonscher…
The Dzyaloshinskii Moriya Interaction (DMI) at the heavy metal (HM) and ferromagnetic metal (FM) interface has been recognized as a key ingredient in spintronic applications. Here we investigate the chemical trend of DMI on the 5d band filling (5d^3~5d^10) of the HM element in HM/CoFeB/MgO multilayer thin films. DMI is quantitatively evaluated by measuring asymmetric spin wave dispersion using Brillouin light scattering. Sign reversal and 20 times modification of the DMI coefficient D have been measured as the 5d HM element is varied. The chemical trend can be qualitatively understood by consi…
MXenes are rapidly emerging two-dimensional (2D) materials with thickness, composition, and functionalization-dependent outstanding properties having applications in diverse fields. To disclose nano-spintronic applications of 2D-double transition metal (DTM) carbide and nitride-based pristine and surface-functionalized MXenes (M'2M"X2Tx, M' and M" = Cr, Mo, W; X = C/N; T = -F/-OH/=O), a systematic investigation has been performed on structural stability, magnetic properties and electronic structure using spin-polarized first-principles calculations. 36 stables functionalized MXenes were screen…
Extraordinary electronic phases can form in artificial oxide heterostructures, which will provide a fertile ground for new physics and also give rise to novel device functions. Based on a systematic first-principles density functional theory study of the magnetic and electronic properties of the (111) superlattices (ABO3)2/(AB'O3)10 of 4d and 5d transition metal perovskite (B = Ru, Rh, Ag, Re, Os, Ir, Au; AB'O3 = LaAlO3, SrTiO3), we demonstrate that due to quantum confinement, bilayers (LaBO3)2 (B = Ru, Re, Os) and (SrBO3)2 (B = Rh, Os, Ir) are ferromagnetic with ordering temperatures up to ro…
In spite of the absence of a macroscopic magnetic moment, an anti-ferromagnet is spin-polarized on an atomic scale. The electric current passing through a conducting anti-ferromagnet is polarized as well, leading to spin-transfer torques when the order parameter is textured, such as in anti-ferromagnetic non-collinear spin valves and domain walls. We report a first principles study on the electronic transport properties of anti-ferromagnetic systems. The current-induced spin torques acting on the magnetic moments are comparable with those in conventional ferromagnetic materials, leading to mea…
From ferromagnetic semiconductor to anti-ferromagnetic metal in epitaxial Cr$_x$Te$_y$ monolayers
University of St Andrews（圣安德鲁斯大学）；STFC Central Laser Facility, Research Complex at Harwell（STFC中央激光设施，哈韦尔研究综合体）；Diamond Light Source（钻石光源）；Universität Bonn（波恩大学）
The interfacial Dzyaloshinskii Moriya Interaction (DMI) in ultrathin magnetic thin film heterostructures provides a new approach for controlling spin textures on mesoscopic length scales. Here we investigate the dependence of the interfacial DMI constant D on a Pt wedge insertion layer in Ta_CoFeB_Pt(wedge)_MgO thin films by observing the asymmetric spin wave dispersion using Brillouin light scattering. Continuous tuning of D by more than a factor of three is realized by inserting less than one monolayer of Pt. The observations provide new insights for designing magnetic thin film heterostruct…
We have succeeded in growing ferromagnetic metals (Co, Fe, and NiFe)/ Al2O3/ AlGaAs heterostructures with homogeneous and flat interfaces. The electro-luminescence (EL) from the light emitting diode (LED) consisting of the metal/insulator/semiconductor (MIS) structure depends on the magnetization direction of the ferromagnetic electrode at room temperature. This fact shows that a spin-injection from the ferromagnetic metal to the semiconductor is achieved. The spin-injection efficiency is estimated to be the order of 1 % at room temperature.
We discuss the influence of a uniform current, $\vec{j} $, on the magnetization dynamics of a ferromagnetic metal. We find that the magnon energy $ε(\vec{q})$ has a current-induced contribution proportional to $\vec{q}\cdot \vec{\cal J}$, where $\vec{\cal J}$ is the spin-current, and predict that collective dynamics will be more strongly damped at finite ${\vec j}$. We obtain similar results for models with and without local moment participation in the magnetic order. For transition metal ferromagnets, we estimate that the uniform magnetic state will be destabilized for $j \gtrsim 10^{9} {\rm …
The realization of long range and insulating ferromagnetic states in topological insulator (TI) has been a pressing issue since its discovery. Only recently, such state was achieved in Cr-doped Bi2-xSbxTe3, leading to the discovery of quantum anomalous Hall effect (QAHE). However, the effect is only observed at extremely low temperatures mainly due to the limited magnetism. To fully understand the mechanism of the ferromagnetic ordering whereby improving the ferromagnetism, we investigated 4f transition metal-doped Bi2Se3, using density-functional-theory approaches. We found that Eu and Sm pre…
The symmetry properties and the general overview of the superconductivity theory in the itinerant ferromagnets and in materials without space parity are presented. The basic notions of unconventional superconductivity are introduced in broad context of multiband superconductivity which is inherent property of ferromagnetic metals or metals without centre of inversion.
We theoretically investigate the ground state properties of ferromagnetic metal/conjugated polymer interfaces. The work is partially motivated by recent experiments in which injection of spin polarized electrons from ferromagnetic contacts into thin films of conjugated polymers was reported. We use a one-dimensional nondegenerate Su-Schrieffer-Heeger (SSH) Hamiltonian to describe the conjugated polymer and one-dimensional tight-binding models to describe the ferromagnetic metal. We consider both a model for a conventional ferromagnetic metal, in which there are no explicit structural degrees o…
The large change in electromagnetic impedance in ferromagnetic state of soft magnetic metals in presence of biasing magnetic field is associated with change in screening of electromagnetic field. The screening depends on the permeability of the metal. Apart from dependence on intrinsic properties of metal the permeability depends on size of the sample. It is observed that the decrease in MI in amorphous ferromagnetic ribbon of Fe40Ni40B20 alloy is large for long sample whereas corresponding change is small for short one with same biasing field. As intrinsic magnetic properties and bias field a…
We investigate the growth of half metallic phase in a ferromagnetic material using state-of-the-art full potential linearized augmented plane wave method. To address the issue, we have substituted Ti at the Ru-sites in SrRuO3, where SrRuO3 is a ferromagnetic material. Calculated results establish Ti4+ valence states (similar to SrTiO3), which was predicted experimentally. Thus, Ti substitution dilutes the Ru-O-Ru connectivity, which is manifested in the calculated results in the form of significant band narrowing leading to finite gap between t2g and eg bands. At 75% substitution, a large gap …
In a two-dimensional ferromagnetic metal layer lacking inversion symmetry, the itinerant electrons mediate the interaction between the Rashba spin-orbit interaction and the ferromagnetic order parameter, leading to a Rashba spin torque exerted on the magnetization. Using Keldysh technique, in the presence of both magnetism and a spin-orbit coupling, we derive a spin diffusion equation that provides a coherent description to the diffusive spin dynamics. The characteristics of the spin torque and its implication on magnetization dynamics are discussed in the limits of large and weak spin-orbit c…
We present a general framework to describe the simultaneous para-to-ferromagnetic and semiconductor-to-metal transition in electron-doped EuO. The theory correctly describes detailed experimental features of the conductivity and of the magnetization, in particular the doping dependence of the Curie temperature. The existence of correlation-induced local moments on the impurity sites is essential for this description.
We demonstrate an exchange bias in (Ga,Mn)As induced by antiferromagnetic coupling to a thin overlayer of Fe. Bias fields of up to 240 Oe are observed. Using element-specific x-ray magnetic circular dichroism measurements, we distinguish a strongly exchange coupled (Ga,Mn)As interface layer in addition to the biassed bulk of the (Ga,Mn)As film. The interface layer remains polarized at room temperature.
The asymmetry of the modal profiles for dipole-exchange spin waves propagating in in-plane magnetized ferromagnetic films at a right angle to the applied magnetic field has been investigated theoretically. It was found that in the large-magnetic moment ferromagnetic metallic films with typical thicknesses 10-60 nm the fundamental mode of the spectrum is localized at the surface opposite to the surface of localization of the exchange-free Damon-Eshbach surface wave. This anomalous localization of the wave does not affect the non-reciprocity of spin wave excitation by microstrip and coplanar tra…
A scaling relation of the anomalous Hall effect recently found in a ferromagnetic semiconductor (Ti,Co)O_2_ is compared with those of various ferromagnetic semiconductors and metals. Many of these compounds with relatively low conductivity sigma_xx_ < 10^4 ohm^-1 cm^-1 are also found to exhibit similar relation: anomalous Hall conductivity sigma_AH_ approximately scales as sigma_AH_ proportional to sigma_xx_^1.6, that is coincident with a recent theory. This relation is valid over five decades of sigma_xx_ irrespective of metallic or hopping conduction.
The electrical resistance of ferromagnetic/normal-metal (F/N) heterostructures depends on the nature of the junctions which may be tunnel barriers, point contacts, or intermetallic interfaces. For all junction types, the resistance of disordered F/N/F perpendicular spin valves as a function of the angle between magnetization vectors is shown to obey a simple universal law. The spin-current induced magnetization torque can be measured by the angular magnetoresistance of these spin valves. The results are generalized to arbitrary magnetoelectronic circuits.
We propose FeSb2 to be a nearly ferromagnetic small gap semiconductor, hence a direct analog of FeSi. We find that despite different compositions and crystal structures, in the local density approximation with on-site Coulomb repulsion correction (LDA+U) method magnetic and semiconducting solutions for U=2.6 eV are energetically degenerate similar to the case of FeSi. For both FeSb2 and FeSi (FeSi1-xGex alloys) the underlying transition mechanism allows one to switch from a small gap semiconductor to a ferromagnetic metal with magnetic moment 1 muB per Fe ion with external magnetic field.
Recent theories of spin-current-induced magnetization reversal are formulated in terms of a spin-mixing conductance $G^{mix}$. We evaluate $G^{mix}$ from first-principles for a number of (dis)ordered interfaces between magnetic and non-magnetic materials. In multi-terminal devices, the magnetization direction of a one side of a tunnel junction or a ferromagnetic insulator can ideally be switched with negligible charge current dissipation.
Cobaltates have rich spin-states and diverse properties. Using spin-state pictures and firstprinciples calculations, here we study the electronic structure and magnetism of the mixed-valent double perovskite YBaCo2O6. We find that YBaCo2O6 is in the formal intermediate-spin (IS) Co3+/low-spin (LS) Co4+ ground state. The hopping of eg electron from IS-Co3+ to LS-Co4+ via double exchange gives rise to a ferromagnetic half-metallicity, which well accounts for the recent experiments. The reduction of both magnetization and Curie temperature by oxygen vacancies is discussed, aided with Monte Carlo …
Spin dynamics of a metallic ferromagnetic film imbedded between normal metal layers is studied using the spin-pumping theory of Tserkovnyak et al. [Phys. Rev. Lett. 88, 117601 (2002)]. The scattering matrix for this structure is obtained using a spin-dependent potential with quantum well in the ferromagnetic region. Owing to multiple reflections in the well, the excess Gilbert damping and the gyromagnetic ratio exhibit quantum oscillations as a function of the thickness of the ferromagnetic film. The wavelength of the oscillations is given by the depth of the quantum well. For iron film imbedd…
We argue that a single-band itinerant electron model with short-range interactions, proposed by Karchev et al. (cond-mat/9911489) and investigated further by Jackiewicz et al. (cond-mat/0302449), cannot describe the coexistence of superconducting and ferromagnetic order.
The spin-helical surface states in three-dimensional topological insulator (TI), such as Bi2Se3, are predicted to have superior efficiency in converting charge current into spin polarization. This property is said to be responsible for the giant spin-orbit torques observed in ferromagnetic metal/TI structures. In this work, using first-principles and model tight-binding calculations, we investigate the interface between the topological insulator Bi2Se3 and 3d-transition ferromagnetic metals Ni and Co. We find that the difference in the work functions of the topological insulator and the ferrom…
Metallic transition-metal oxides undergo a metal-to-insulator transition (MIT) as the film thickness decreases across a ritical thickness of several monolayers (MLs), but its driving mechanism remains controversial. We have studied the thickness-dependent MIT of the ferromagnetic metal La$_{0.6}$Sr$_{0.4}$MnO$_3$ by x-ray absorption spectroscopy and x-ray magnetic circular dichroism. As the film thickness was decreased across the critical thickness of the MIT (6-8 ML), a gradual decrease of the ferromagnetic signals and a concomitant increase of paramagnetic signals were observed, while the Mn…
A surface magnetoelectric effect is revealed by density-functional calculations that are applied to ferromagnetic Fe(001), Ni(001) and Co(0001) films in the presence of external electric field. The effect originates from spin-dependent screening of the electric field which leads to notable changes in the surface magnetization and the surface magnetocrystalline anisotropy. These results are of considerable interest in the area of electrically-controlled magnetism and magnetoelectric phenomena.
Spin currents in ferromagnets afford diverse functionalities. We evaluate the extrinsic spin Hall effects of magnetic impurity scattering in ferromagnetic metals. We show that spin-dependent scattering can provide a high spin current polarized perpendicularly to the magnetization direction and is a dominant mechanism in the moderate-conductivity regime. We find that the superposition of the spin-conserve and spin-flip channels causes the spin currents. These findings suggest that optimizing alloy composition is an effective strategy to control the spin Hall effect.
We study the mechanisms of the spin Hall effect (SHE) and anomalous Hall effect (AHE) in 3$d$ ferromagnetic metals (Fe, Co, permalloy (Ni$_{81}$Fe$_{19}$; Py), and Ni) by varying their resistivities and temperature. At low temperatures where the phonon scattering is negligible, the skew scattering coefficients of the SHE and AHE in Py are related to its spin polarization. However, this simple relation breaks down for Py at higher temperatures as well as for the other ferromagnetic metals at any temperature. We find that, in general, the relation between the SHE and AHE is more complex, with th…
The effect of disorder on transport and magnetization in ferromagnetic III-V semiconductors, in particular (Ga,Mn)As, is studied theoretically. We show that Coulomb-induced correlations of the defect positions are crucial for the transport and magnetic properties of these highly compensated materials. We employ Monte Carlo simulations to obtain the correlated defect distributions. Exact diagonalization gives reasonable results for the spectrum of valence-band holes and the metal-insulator transition only for correlated disorder. Finally, we show that the mean-field magnetization also depends c…
The longitudinal spin Seebeck effect is measured on the ferromagnetic insulator Fe$_3$O$_4$ with the ferromagnetic metal Co$_{0.2}$Fe$_{0.6}$B$_{0.2}$ (CoFeB) as the spin detector. By using a non-magnetic spacer material between the two materials (Ti), it is possible to decouple the two ferromagnetic materials and directly observe pure spin flow from Fe$_3$O$_4$ into CoFeB. It is shown, that in a single ferromagnetic metal the inverse spin Hall effect (ISHE) and anomalous Nernst effect (ANE) can occur simultaneously with opposite polarity. Using this and the large difference in the coercive fi…
The injection of spin polarized electrons from ferromagnetic metals (Fe and Co) into gallium nitride (GaN) via scanning tunneling microscopy (STM) is demonstrated. Electrons from STM tips are injected into the semiconductor. Net circular polarization of the emitted light is observed, which changes sign on reversal of the magnetization of the tip. The polarization is found to be in qualitative agreement with that expected from considerations based on the splitting of the valence bands due to spin-orbit coupling and the crystal field splitting corresponding to the wurtzite structure, and the mag…
Recent experiments have revealed nonlinear features of the magnetoresistance in metallic bilayers consisting of a heavy-metal (HM) and a ferromagnetic metal (FM). A small change in the lon- gitudinal resistance of the bilayer has been observed when reversing the direction of either the applied in-plane current or the magnetization. We attribute such nonlinear transport behavior to the spin-polarization dependence of the electron mobility in the FM layer acting in concert with the spin accumulation induced in that layer by the spin Hall current originating in the bulk of the HM layer. An explic…
We report chirality-induced current-in-plane magnetoresistance (CIP-MR) in chiral molecule/ferromagnetic metal bilayer at room temperature. The previously reported chiralityinduced current-perpendicular-to-plane magnetoresistance (CPP-MR) originates from the chiral induced spin-selectivity (CISS) effect that needs charge-current passing through the molecule. In contrast, the observed CIP-MR in the present study requires no bias charge current through the molecule. The temperature dependence of CIP-MR suggests thermally induced spin-polarization in the chiral molecules is the key for the observ…
