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arXiv 1105.4148cond-mat.mtrl-scicond-mat.mes-hall
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铁磁半导体(Ga,Mn)As的磁化耗散

Magnetization Dissipation in the Ferromagnetic Semiconductor (Ga,Mn)As

Kjetil M. D. Hals, Arne Brataas

摘要:

基于磁化弛豫的散射理论计算了(Ga,Mn)As的Gilbert阻尼。无序散射包括非微扰。在干净的限制,自旋泵从本地化的d-电子的巡回孔占主导地位的弛豫过程。在扩散状态下,呼吸费米表面效应被带间散射的效应平衡,这导致吉尔伯特阻尼常数在0.005左右饱和。在小样本中,系统形状引起吉尔伯特阻尼的大的各向异性。

英文摘要:

We compute the Gilbert damping in (Ga,Mn)As based on the scattering theory of magnetization relaxation. The disorder scattering is included non-perturbatively. In the clean limit, the spin-pumping from the localized d-electrons to the itinerant holes dominates the relaxation processes. In the diffusive regime, the breathing Fermi-surface effect is balanced by the effects of interband scattering, which cause the Gilbert damping constant to saturate at around 0.005. In small samples, the system shape induces a large anisotropy in the Gilbert damping.

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