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arXiv 1705.03482cond-mat.str-elcond-mat.mes-hall
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薄膜拓扑绝缘体中激子能隙的产生

Excitonic gap generation in thin-film topological insulators

N. Menezes, C. Morais Smith, Giandomenico Palumbo

摘要:

在这项工作中,我们分析了激子间隙产生的强耦合制度的三维时间反转不变的拓扑绝缘体薄膜。我们首先从3 + 1维量子电动力学的投影出发,写出2 + 1维中的有效规范理论。在这种方法中,我们得到了一个短程相互作用,它具有的形式的Thirring类项,和一个远程的。材料的两个表面态之间的相互作用引起激子带隙。通过在强耦合极限下的大$N$近似,我们发现在激子态中存在一个动力学质量产生过程,该过程保持了时间反演对称性,并且与我们模型的动力学手征对称性破缺有关.这种对称性破缺只在费米子味数小于$N_{c}\approx 11.8$时发生。我们的研究结果表明,包括完整的动力学相互作用强烈修改的激子凝聚的发生的口味的临界数,因此,不能忽略。

英文摘要:

In this work, we analyze the excitonic gap generation in the strong-coupling regime of thin films of three-dimensional time-reversal-invariant topological insulators. We start by writing down the effective gauge theory in 2+1-dimensions from the projection of the 3+1-dimensional quantum electrodynamics. Within this method, we obtain a short-range interaction, which has the form of a Thirring-like term, and a long-range one. The interaction between the two surface states of the material induces an excitonic gap. By using the large-$N$ approximation in the strong-coupling limit, we find that there is a dynamical mass generation for the excitonic states that preserves time-reversal symmetry and is related to the dynamical chiral-symmetry breaking of our model. This symmetry breaking occurs only for values of the fermion-flavor number smaller than $N_{c}\approx 11.8$. Our results show that the inclusion of the full dynamical interaction strongly modifies the critical number of flavors for the occurrence of exciton condensation, and therefore, cannot be neglected.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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