Spin waves are propagating disturbances in magnetically ordered materials, analogous to lattice waves in solid systems and are often described from a quasiparticle point of view as magnons. The attractive advantages of Joule-heat-free transmission of information, utilization of the phase of the wave as an additional degree of freedom and lower footprint area compared to conventional charge-based devices have made spin waves or magnon spintronics a promising candidate for beyond-CMOS wave-based computation. However, any practical realization of an all-magnon based computing system must undergo the essential steps of a careful selection of materials and demonstrate robustness with respect to thermal noise or variability. Here, we aim at identifying suitable materials and theoretically demonstrate the possibility of achieving error-free clocked non-volatile spin wave logic device, even in the presence of thermal noise and clock jitter or clock skew.
A new proposal is given for designing a non-volatile, completely spin logic device, that can be reprogrammed for different functional classical logical operations. We use the concept of bias driven spin dependent circular current and current induced magnetic field in a quantum ring under asymmetric ring-to-electrode interface configuration to implement all the Boolean operations. We extend our idea to build two kinds of parallel computing architectures for getting parallelized operations, all at a particular time. For one case, different kinds of parallel operations are performed in a single d…
Reprogrammable magnonic logic in a multiferroic heterostructure via magnetoelectric coupling
Laboratoire Albert Fert, CNRS, Thales, Université Paris-Saclay（阿尔伯特·费尔特实验室，法国国家科学研究中心，泰雷兹集团，巴黎萨克雷大学）；Faculty of Information Technology and Bionics, Pázmány Peter Catholic University（帕兹马尼·彼得天主教大学信息与仿生技术学院）；Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Saclay（纳米科学与工程中心，法国国家科学研究中心，巴黎萨克雷大学）；Laboratoire de Physique des Solides, CNRS, Université Paris-Saclay（固体物理实验室，法国国家科学研究中心，巴黎萨克雷大学）；Institute of Applied Physics, University of Münster（明斯特大学应用物理研究所）
Spin-wave phase modulation using magnetic domain walls in dipolarly coupled structures for non-volatile magnonic computation
Rheinland-Pfälzische Technische Universität Kaiserslautern-Landau（莱茵兰-普法尔茨技术大学凯泽斯劳滕-兰道）；Université Paris-Saclay, Centre de Nanosciences et de Nanotechnologies, CNRS（巴黎萨克雷大学，纳米科学中心，法国国家科学研究中心）
Spin wave, the precession of magnetic order in magnetic materials, is a collective excitation that carries spin angular momentum. Similar to the acoustic or optical waves, the spin wave also possesses the polarization degree of freedom. Although such polarization degrees of freedom are frozen in ferromagnets, they are fully unlocked in antiferromagnets or ferrimagnets. Here we introduce the concept of magnetic gating and demonstrate a spin wave analog of the Datta-Das spin transistor in antiferromagnet. Utilizing the interplay between polarized spin wave and the antiferromagnetic domain walls,…
Spintronics aims to utilize the spin degree of freedom for energy-efficient, non-volatile memory and logic devices. In this research update, we review state-of-the-art developments and new directions in charge- and spin-based memory/logic with a focus on spintronics and the fascinating potential for superconductivity to boost spin transmission via spin-polarized quasiparticles or triplet Cooper pairs.
Ultrafast Non-Volatile Weyl LuminoMem for Mid-Infrared In-Memory Computing
Peking University（北京大学）；Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University（湖南大学材料科学与工程学院光电集成研究所）；Tianjin University（天津大学）；University of Science and Technology of China（中国科学技术大学）；Zhengzhou University（郑州大学）；Collaborative Innovation Center of Quantum Matter（量子物质协同创新中心）；Frontiers Science Center for Nano-optoelectronics（纳米光子学前沿科学中心）；Beijing Key Laboratory of Quantum Devices（北京量子器件重点实验室）；Hunan Normal University（湖南师范大学）
Magnetic skyrmions are promising candidates for logic-in-memory applications, intrinsically merging high density non-volatile data storage with computing capabilities, owing to their nanoscale size, fast motion, and mutual repulsions. However, concepts proposed so far suffer from reliability issues as well as inefficient conversion of magnetic information to electrical signals. In this paper, we propose a logic-in-memory device which exploits skyrmion confinement and channeling using anisotropy energy barriers to achieve reliable data storage and synchronous shift in racetracks combined with c…
Spintronics provides an efficient platform for realizing non-volatile memory and logic devices. In these systems, data is stored in the magnetization of magnetic materials, and magnetization is switched in the writing process. In conventional spintronic devices, ferromagnetic materials are used which have a magnetization dynamics timescale of around the nanoseconds, setting a limit for the switching speed. Increasing the magnetization switching speed has been one of the challenges in spintronic research. In this work we take advantage of the ultrafast magnetization dynamics in ferrimagnetic ma…
Tuning the frequency of a resonant element is of vital importance in both the macroscopic world, such as when tuning a musical instrument, as well as at the nanoscale. In particular, precisely controlling the resonance frequency of isolated nanoelectromechanical resonators (NEMS) has enabled innovations such as tunable mechanical filtering and mixing as well as commercial technologies such as robust timing oscillators. Much like their electronic device counterparts, the potential of NEMS grows when they are built up into large-scale arrays. Such arrays have enabled neutral-particle mass spectr…
Negative Differential Resistance, Memory and Reconfigurable Logic Functions based on Monolayer Devices derived from Gold Nanoparticles Functionalized with Electro-polymerizable Thiophene-EDOT Units
With the ever-increasing energy need to process big data, the realization of low-power computing technologies, such as superconducting logic and memories, has become a pressing issue. Developing fast and non-volatile superconducting memory elements, however, remains a challenge. Superconductor-ferromagnet hybrid devices offer a promising solution, as they combine ultra-fast manipulation of spins with dissipationless readout. Here, we present a new type of non-volatile Josephson junction memory that utilizes the bistable magnetic texture of a single mesoscopic ferromagnet. We use micromagnetic …
Tetrahedral amorphous carbon resistive memories with graphene-based electrodes
电阻开关存储器是硅基存储器的替代品，硅基存储器面临缩放和高功耗问题。四面体无定形碳（ta-C）显示可逆的、非挥发性的电阻切换。在这里，我们报告的极性无关的ta-C电阻式存储器件与石墨烯为基础的电极。我们的器件显示开/关电阻比$\sim$ 4 x $10^5$，比金属电极高10倍，开关功率没有增加，功率密度低$\sim$ 14 $μ$ W/ $μ$ m $^2$。我们将此归因于由于狄拉克点附近石墨烯的低态密度而抑制的隧穿电流，这与从量子点接触模型导出的电流-电压特性一致。我们的器件还具有多个电阻状态。这允许每个单元存储多于一位。这可以在一系列信号处理/计算类型的操作中被利用，例如实现逻辑、提供突触和神经元样模拟以及在非冯·诺依曼架构中执行模拟信号处理
