Utilizing a combination of low-temperature scanning tunneling microscopy/spectroscopy (STM/STS) and electronic structure calculations, we characterize the structural and electronic properties of single atomic vacancies within several monolayers of the surface of black phosphorus. We illustrate, with experimental analysis and tight-binding calculations, that we can depth profile these vacancies and assign them to specific sublattices within the unit cell. Measurements reveal that the single vacancies exhibit strongly anisotropic and highly delocalized charge density, laterally extended up to 20 atomic unit cells. The vacancies are then studied with STS, which reveals in-gap resonance states near the valence band edge and a strong p-doping of the bulk black phosphorus crystal. Finally, quasiparticle interference generated near these vacancies enables the direct visualization of the anisotropic band structure of black phosphorus.
Synergistic Effects of Phosphorus Doping and Oxygen Vacancies on Formaldehyde Oxidation over CeO$_2$(111): A First Principles Investigation
Université de Lorraine（洛林大学）；CNRS（法国国家科学研究中心）；LEMTA（材料力学与转化实验室）；Université de Monastir（莫纳斯特尔大学）；Faculté des Sciences de Monastir（莫纳斯特尔理学院）；Laboratoire de la matière condensée et nanosciences LR11ES40（凝聚态物质与纳米科学实验室 LR11ES40）；Laboratoire Lorrain de Chimie Moléculaire（洛林分子化学实验室）；Université Lyon 1（里昂第一大学）；IRCELYON（催化、材料和表面研究所）；UMR 5256（联合研究单位 5256）
Probing the anisotropic behaviors of black phosphorus by transmission electron microscope, angular-dependent Raman spectra and electronic transports measurements
New strategy for black phosphorus crystal growth through ternary clathrate
本文报道了一种新的合成方法，在较低的合成温度和压力下，通过三元包合物Sn $_{24}$ P $_{22-x}$ I $_8$生长大尺寸黑磷（Black-P）晶体。黑磷晶体在原来的固体包合物所在的位置原位生长，这表明化学气相矿化剂对黑磷的形成并不起关键作用。更详细的系统研究表明，三元笼形化合物Sn $_{24}$ P $_{22-x}$ I $_8$中的P空位对后续由磷蒸气合成Black-P具有重要作用，Black-P晶体的生长可能遵循汽-固-固（VSS）模型。在机械切割的薄片上，从霍尔测量获得的室温迁移率μ为约350 $cm^2/Vs$，其中可见明显的微裂纹。所获得的高迁移率值进一步表明通过该途径合成的Black-P晶体的高质量。
Probing defect induced room temperature ferromagnetism in CVD grown MoO3 flakes: A correlation with electronic structure and first principle-based calculations
Probing the local environment of two-dimensional ordered vacancy structures in Ga2SeTe2 via aberration-corrected electron microscopy
具有高浓度天然空位的硫属化物合金引起了人们极大的兴趣，这些空位导致热电和相变材料所需的性能。最近，空位有序已被确定为在GeSb 2 Te 4中观察到的金属-绝缘体转变和在Ga 2 Te 3中意外低的热导率的机制。在这里，我们报告的空位有序Ga 2SeTe 2利用像差校正电子显微镜的直接观察。图像揭示了一个阳离子-阴离子哑铃型反转与整个晶体的空位排序的住宿。结果是原生缺陷和局部结构之间相互作用的一个突出例子。
Probing Electromigration of Oxygen Vacancies in YBa$_2$Cu$_3$O$_{7-δ}$ Devices by Multimodal X-ray Techniques
Universidade Federal de São Carlos（圣卡洛斯联邦大学）；National High Magnetic Field Laboratory, Los Alamos National Laboratory（洛斯阿拉莫斯国家实验室国家高磁场实验室）；Université de Liège（列日大学）；Centro Brasileiro de Pesquisas Físicas（巴西物理研究中心）；Institut de Ciència de Materials de Barcelona, ICMAB-CSIC（巴塞罗那材料科学研究所）；Brazilian Nanotechnology National Laboratory, Brazilian Center for Research in Energy and Materials（巴西纳米技术国家实验室、巴西能源与材料研究中心）
