Interfacial charge separation and recombination at heterojunctions of monolayer transition metal dichalcogenides (TMDCs) are of interest to two dimensional optoelectronic technologies. These processes can involve large changes in parallel momentum vector due to the confinement of electrons and holes to the K-valleys in each layer. Since these high-momentum valleys are usually not aligned across the interface of two TMDC monolayers, how parallel momentum is conserved in the charge separation or recombination process becomes a key question. Here we probe this question using the model system of a type-II heterojunction formed by MoS2 and WSe2 monolayers and the experimental technical of femtosecond pump-probe spectroscopy. Upon photo-excitation specifically of WSe2 at the heterojunction, we observe ultrafast (<40 fs) electron transfer from WSe2 to MoS2, independent of the angular alignment and, thus, momentum mismatch between the two TMDCs. The resulting interlayer charge transfer exciton decays via nonradiatively recombination, with rates varying by up to three-orders of magnitude from sample to sample, but with no correlation with inter-layer angular alignment. We suggest that the initial interfacial charge separation and the subsequent interfacial charge recombination processes circumvent momentum mismatch via excess electronic energy and via defect-mediated recombination, respectively.
We demonstrate that the interfacial dipole associated with bonding across the SrTiO3/Si heterojunction can be tuned through space charge, thereby enabling the band alignment to be altered via doping. Oxygen impurities in Si act as donors that create space charge by transferring electrons across the interface into SrTiO3. The space charge induces an electric field that modifies the interfacial dipole, thereby tuning the band alignment from type-II to type-III. The transferred charge, resulting in built-in electric fields, and change in band alignment are manifested in electrical transport and h…
We have successfully demonstrated Si/GaAs p-n heterostructures using Al2O3 ultra-thin oxide interfacial layers. The band diagram and band offsets were investigated using X-ray photoelectron spectroscopy and confirm a small discontinuity in the conduction band (0.03 eV) at the interface. The interface defect density (Dit) values of the heterointerface with different ultra-thin oxide (UO) thicknesses ranged from 0.35 nm to 3.5 nm and were also characterized based on a metal-oxide-semiconductor capacitor (MOSCAP) structure using a capacitance-voltage measurement. The results revealed that a thin …
Using first-principles density-functional calculations, we address the magnetic properties of the ferromagnet/antiferromagnet La(0.67)Sr(0.33)MnO3/BiFeO3(001) heterojunctions, and investigate possible driving mechanisms for a ferromagnetic (FM) interfacial ordering of the Fe spins recently observed experimentally. We find that the chemically abrupt defect-free La(0.67)Sr(0.33)MnO3/BiFeO3(001) heterojunction displays, as ground state, an ordering with compensated Fe spins. Cation Fe/Mn intermixing at the interface tends to favour, instead, a FM interfacial order of the Fe spins, coupled antifer…
In organic bulk heterojunction solar cells, the donor/acceptor interfacial energy offset ($ΔE$) is found to provide the driving force for efficient charge separation which gives rise to high short circuit current density ($J_\mathrm{sc}$), but a high $ΔE$ inevitably undermines the open circuit voltage ($V_\mathrm{oc}$). In this paper, employing the device model method we calculated the steady state current density-voltage ($J-V$) and the $J_\mathrm{sc}-ΔE$ curves under two different charge separation mechanisms to investigate the optimum driving force required for achieving sizable $V_\mathrm{…
The structure property of non-ideal Si/GaAs heterostructures that were integrated with the ultra-thin oxide (UO) tunneling interfacial layer has been systematically investigated. Si nanomembranes (NMs) were oxidized in different time periods prior to the hetero-integration process to create the non-ideal single-side passivated Si/GaAs heterostructure. The atomic level oxygen distribution and the degree of oxygen content in Si NM and GaAs were carefully investigated using the atom probe tomography (APT) and X-ray photoelectron spectroscopy (XPS) to trace the changes in chemical composition and …
Band alignment of grafted diamond/GaN p-n heterojunctions interfaced with ALD Al2O3 and SiNx/Al2O3
University of Wisconsin-Madison（威斯康星大学麦迪逊分校）；Texas A&M University（德克萨斯农工大学）；University at Buffalo, The State University of New York（纽约州立大学布法罗分校）；Fraunhofer USA Inc（弗劳恩霍夫美国公司）；Northrop Grumman Corporation（诺斯罗普·格鲁曼公司）
Colloidal zinc oxide (ZnO) nanoparticles are frequently used in the field of organic photovoltaics for the realization of solution-producible, electron-selective interfacial layers. Despite of the widespread use, there is a lack of detailed investigations regarding the impact of structural properties of the particles on the device performance. In this work, ZnO nanoparticles with varying surface-area-to-volume ratio were synthesized and implemented into polymer-fullerene bulk heterojunction solar cells with a gas-permeable top electrode. By comparing the electrical characteristics before and a…
van der Waals (vdW) heterojunctions formed by two-dimensional (2D) materials have attracted tremendous attention due to their excellent electrical/optical properties and device applications. However, current 2D heterojunctions are largely limited to atomic crystals, and hybrid organic/inorganic structures are rarely explored. Here, we fabricate hybrid 2D heterostructures with p-type dioctylbenzothienobenzothiophene (C8-BTBT) and n-type MoS2. We find that few-layer C8-BTBT molecular crystals can be grown on monolayer MoS2 by vdW epitaxy, with pristine interface and controllable thickness down t…
Charge redistribution across heterojunctions has long been utilized to induce functional response in materials systems. Here we examine how the composition of the terminating surface affects charge transfer across a heterojunction consisting of Si and the crystalline complex oxide SrTiO3. Itinerant electrons in Si migrate across the interface toward the surface of SrTiO3 due to surface depletion. The electron transfer in turn creates an electric field across the interface that modifies the interfacial dipole associated with bonding between SrTiO3 and Si, leading to a change in the band alignme…
The electronic structure of heterointerfaces play a pivotal role in their device functionality. Recently, highly crystalline ultrathin films of superconducting NbN have been integrated by molecular beam epitaxy with the semiconducting GaN. We use soft X-ray angle-resolved photoelectron spectroscopy to directly measure the momentum-resolved electronic band structures for both NbN and GaN constituents of this Schottky heterointerface, and determine their momentum-dependent interfacial band offset as well as the band-bending profile into GaN. We find, in particular, that the Fermi states in NbN a…
In this paper, we have built a numerical p-n Si/GaAs heterojunction model using a quantum-mechanical tunneling theory with various quantum tunneling interfacial materials including two-dimensional semiconductors such as hexagonal boron nitride (h-BN) and graphene and ALD-enabled oxide materials such as HfO2, Al2O3, and SiO2. Their tunneling efficiencies and tunneling current with different thicknesses were systematically calculated and compared. Multiphysics modeling was used with the aforementioned tunneling interfacial materials to analyze changes in strain under different temperature condit…
The high efficiency of charge generation within organic photovoltaic blends apparently contrasts with the strong "classical" attraction between newly formed electron-hole pairs. Several factors have been identified as possible facilitators of charge dissociation, such as quantum mechanical coherence and delocalization, structural and energetic disorder, built-in electric fields, nanoscale intermixing of the donor and acceptor components of the blends. Our mesoscale quantum-chemical model allows an unbiased assessment of their relative importance, through excited-state calculations on systems c…
Hybrid materials are crucial in photovoltaics where the overall efficiency of the heterostructure is closely related to the level of charge transfer at the interface. Here, using various metal / poly(3-hexylthiophene)(P3HT) heterostructure models, we reveal that the level of spontaneous charge transfer and electronic coupling at these interfaces depend on the conformational regularity of the organic polymer deposited on the metal substrate. Using ab-initio quantum chemical calculations based on density functional theory (DFT) and heterodyne vibrational sum frequency generation (HD-VSFG) measur…
High-speed and high-gain graphene photovoltaic phototransistor gated by a van der Waals heterojunction
School of Integrated Circuits and Microelectronics, State Key Laboratory of Flexible Electronics & School of Flexible Electronics, Northwestern Polytechnical University（西北工业大学集成电路与微纳电子学院、柔性电子技术研究院）；School of Physical Science and Technology, Northwestern Polytechnical University（西北工业大学物理科学与技术学院）
We investigate the electronic dynamics of model organic photovoltaic (OPV) system consisting of polyphenylene vinylene (PPV) oligomers and [6,6]-phenyl C61-butyric acid methylester (PCBM) blend using a mixed molecular mechanics/quantum mechanics (MM/QM) approach. Using a heuristic model that connects energy gap fluctuations to the average electronic couplings and decoherence times, we provide an estimate of the state-to-state internal conversion rates within the manifold of the lowest few electronic excitations. We find that the lowest few excited states of a model interface are rapidly mixed …
The energetic landscape at the interface between electron donating and accepting molecular materials favors efficient conversion of intermolecular charge-transfer states (CTS) into free charge carriers in high-performance organic solar cells. Here, we elucidate how interfacial energetics, charge generation and radiative recombination are affected by structural ordering. We experimentally determine the CTS binding energy of a series of model, small molecule donor-acceptor blends, where the used acceptors (B2PYMPM, B3PYMPM and B4PYMPM) differ only in the nitrogen position of their lateral pyridi…
Enhanced interfacial charge transfer by Z-scheme in defect-mediated ZnO-CdS nano-composite with rGO as a solid-state electron mediator for efficient photocatalytic applications
Realizing van der Waals (vdW) epitaxy in the 80s represents a breakthrough that circumvents the stringent lattice matching and processing compatibility requirements in conventional covalent heteroepitaxy. However, due to the weak vdW interactions, there is little control over film qualities by the substrate. Typically, discrete domains with a spread of misorientation angles are formed, limiting the applicability of vdW epitaxy. Here we report the epitaxial growth of monocrystalline, covalent Cr5Te8 2D crystals on monolayer vdW WSe2 by chemical vapor deposition, driven by interfacial dative bon…
Exciton dissociation at heterojunctions in photovoltaic devices is not completely understood despite being fundamentally necessary to generate electrical current. One of the fundamental issues for ab initio calculations is that hybrid interfaces combining materials with Wannier-Mott excitons and those with Frenkel excitons can easily require thousands of atoms to encompass the exciton-wave function. The problem is further exacerbated by a large permittivity difference at the interface, which requires meso-scale boundary conditions to accurately predict electrostatic potentials. For these reaso…
