由范德华异质结栅控的高速高增益石墨烯光伏光电晶体管
High-speed and high-gain graphene photovoltaic phototransistor gated by a van der Waals heterojunction
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中文总结 AI 辅助
该研究开发了一种由MoS₂/PtSe₂异质结栅控的石墨烯光伏光电晶体管，通过光伏与光栅效应突破了二维光电晶体管的增益-速度权衡，实现了高速、高增益及宽带光电探测，为高性能二维光电晶体管提供了新范式。
中文摘要 AI 辅助
基于二维（2D）材料的光电晶体管可在单个器件内实现光学传感、信号放大与逻辑操作的独特结合，但本质上存在固有的增益-速度权衡问题。本文展示了一种二维光伏光电晶体管，它利用MoS₂/PtSe₂异质结对石墨烯沟道进行栅控，克服了这一局限。该异质结中的超快光伏效应实现了电荷分离，通过界面栅控在石墨烯沟道中产生超高光电导增益（达10⁸）；此外，响应时间（低于550 ns的仪器分辨率）由石墨烯沟道中的载流子传输决定，实现了高速与高增益的同步。同时，MoS₂/PtSe₂异质结的光学特性使其能实现从可见光到近红外的宽带光电探测，探测率超过10¹¹ Jones。这些结果通过利用光伏与光栅效应克服经典增益-速度权衡，为高性能二维光电晶体管建立了新范式。
英文摘要
Two-dimensional (2D) material-based phototransistors offer a unique combination of optical sensing, signal amplification, and logic operation within a single device, yet fundamentally suffering from an inherent gain-speed trade-off. Here, we demonstrate a 2D photovoltaic phototransistor that overcomes this limitation using a MoS2/PtSe2 heterojunction to gate a graphene channel. The ultrafast photovoltaic effect in the heterojunction enables charge separation, yielding ultrahigh photoconductive gain (up to 10^8) in graphene channel via interfacial gating. Besides, the response time (below the instrumental resolution of 550 ns) is governed by carrier transit in graphene channel, enabling simultaneous high speed and high gain. Moreover, broadband photodetection from visible to near-infrared is enabled by the optical properties of the MoS2/PtSe2 heterojunction, with the detectivity exceeding 10^11 Jones. These results establish a new paradigm for high-performance 2D phototransistors by harnessing photovoltaic and photogating effects to overcome the classical gain-speed trade-off.
