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arXiv 1702.04061cond-mat.mtrl-scicond-mat.supr-con
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ReS2中的压力诱导金属化和超导相

Pressure-induced metallization and superconducting phase in ReS2

Dawei Zhou, Yonghui Zhou, Chunying Pu, Xuliang Chen, Pengchao Lu, Xuefei Wang, Chao An, Ying Zhou, Feng Miao, Ching-Hwa Ho, Jian Sun, Zhaorong Yang, Dingyu Xing

摘要:

在TMD家族中,ReS 2占据特殊的位置,其在环境条件下以独特的畸变低对称结构结晶。ReS 2的层间相互作用较弱,因此其体相性质与单分子层相类似。然而,压缩如何改变其结构和电子性质至今仍是未知的。在这里,使用从头计算晶体结构搜索技术,我们探讨了高压相变的ReS 2广泛和预测两个新的高压相。常压相在很低的压力下转变为“扭曲的-1T”结构,然后在约90 GPa下转变为tetrahydroxide I41/amd结构。“扭曲-1T”结构在约70 GPa下经历了带重叠机制的超导-金属转变(SMT)。电子-声子计算表明,I41/amd结构是超导的,并且在100 GPa下具有约2 K的临界超导温度。我们还可以进行高达102 GPa的高压电阻测量。我们的实验证实了高压下ReS_2的SMT和超导相变。这些实验结果与我们的理论预测是一致的。

英文摘要:

Among the family of TMDs, ReS2 takes a special position, which crystalizes in a unique distorted low-symmetry structure at ambient conditions. The interlayer interaction in ReS2 is rather weak, thus its bulk properties are similar to that of monolayer. However, how does compression change its structure and electronic properties is unknown so far. Here using ab initio crystal structure searching techniques, we explore the high-pressure phase transitions of ReS2 extensively and predict two new high-pressure phases. The ambient pressure phase transforms to a "distorted-1T" structure at very low pressure and then to a tetragonal I41/amd structure at around 90 GPa. The "distorted-1T" structure undergoes a semiconductor-metal transition (SMT) at around 70 GPa with a band overlap mechanism. Electron-phonon calculations suggest that the I41/amd structure is superconducting and has a critical superconducting temperature of about 2 K at 100 GPa. We further perform high-pressure electrical resistance measurements up to 102 GPa. Our experiments confirm the SMT and the superconducting phase transition of ReS2 under high pressure. These experimental results are in good agreement with our theoretical predictions.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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