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arXiv 1701.05971cond-mat.mes-hallcond-mat.mtrl-sci
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从半金属到半导体:锯齿形SiC纳米带中电子相关效应的第一性原理研究

From Half-metal to Semiconductor: Electron-correlation Effects in Zigzag SiC Nanoribbons From First Principles

Naresh Alaal, Vaideesh Loganathan, Nikhil Medhekar, Alok Shukla

摘要:

我们进行了电子结构计算的基础上的第一性原理多体理论方法,以研究准粒子带隙,和氢钝化锯齿形SiC纳米带的光吸收光谱。自能校正包括使用GW近似,和激子效应包括使用贝特-萨尔彼得方程。我们系统地研究了宽度在0.6 $\text{nm}$和2.2 $\text{nm}$之间的纳米带。准粒子修正扩大了Kohn-Sham带隙,因为减少维数引起的增强的相互作用效应。宽度大于1 nm的锯齿形SiC纳米带在平均场水平下表现出半金属性。自能修正大大增加了带隙,从而将半金属锯齿形SiC纳米带转变为窄隙自旋极化半导体。这些纳米带的光学吸收光谱得到显着修改后,包括电子-空穴相互作用,和最后的带状物表现出强烈的束缚激子,结合能为2.1 eV。因此,最窄的锯齿形SiC纳米晶具有用于在光谱的IR区域中操作的光电子器件的潜力,而表现出自旋极化的更宽的纳米晶可以用于自旋电子学应用。

英文摘要:

We performed electronic structure calculations based on the first-principles many-body theory approach in order to study quasiparticle band gaps, and optical absorption spectra of hydrogen-passivated zigzag SiC nanoribbons. Self-energy corrections are included using the GW approximation, and excitonic effects are included using the Bethe-Salpeter equation. We have systematically studied nanoribbons that have widths between 0.6 $\text{nm}$ and 2.2 $\text{nm}$. Quasiparticle corrections widened the Kohn-Sham band gaps because of enhanced interaction effects, caused by reduced dimensionality. Zigzag SiC nanoribbons with widths larger than 1 nm, exhibit half-metallicity at the mean-field level. The self-energy corrections increased band gaps substantially, thereby transforming the half-metallic zigzag SiC nanoribbons, to narrow gap spin-polarized semiconductors. Optical absorption spectra of these nanoribbons get dramatically modified upon inclusion of electron-hole interactions, and the narrowest ribbon exhibits strongly bound excitons, with binding energy of 2.1 eV. Thus, the narrowest zigzag SiC nanoribbon has the potential to be used in optoelectronic devices operating in the IR region of the spectrum, while the broader ones, exhibiting spin polarization, can be utilized in spintronic applications.

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