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arXiv 1609.07973cond-mat.mes-hallcond-mat.mtrl-sciquant-ph
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GaN纳米线上m面InGaN量子点的超快偏振单光子发射

Ultrafast, polarized, single-photon emission from m-plane InGaN Quantum Dots on GaN nanowires

Tim J. Puchtler, Tong Wang, Christopher X. Ren, Fengzai Tang, Rachel A. Oliver, Robert A. Taylor, Tongtong Zhu

摘要:

我们展示了嵌入在GAN纳米线侧壁上的自组装m面InGaN量子点(QD)的单光子发射。结合电子显微镜,阴极射线发光,时间分辨微PL和光子自相关实验给出了一个全面的量子点的结构和光学性能的评估。量子点在100 K温度下表现出反聚束发射,在5 K温度下测得的自相关函数为g^2(0)= 0.28(0.03)。对统计上显著数量的QD的研究表明,这些m-平面QD表现出非常快的辐射寿命(260 +/-55 ps),这表明比先前报道的任何c-平面和a-平面QD都更小的内部场。此外,观察到的单光子几乎完全线性偏振,垂直于晶体学c轴,线性偏振度为0.84 +/- 0.12。这种InGaN量子点纳入纳米线系统满足许多要求的实施到量子信息系统,并可能打开大门,全新的设备概念。

英文摘要:

We demonstrate single photon emission from self-assembled m-plane InGaN quantum dots (QDs) embedded on the side-walls of GaN nanowires. A combination of electron microscopy, cathodoluminescence, time-resolved micro-PL and photon autocorrelation experiments give a thorough evaluation of the QDs structural and optical properties. The QD exhibits anti-bunched emission up to 100 K, with a measured autocorrelation function of g^2(0) = 0.28 (0.03) at 5 K. Studies on a statistically significant number of QDs show that these m-plane QDs exhibit very fast radiative lifetimes (260 +/- 55 ps) suggesting smaller internal fields than any of the previously reported c-plane and a-plane QDs. Moreover, the observed single photons are almost completely linearly polarized aligned perpendicular to the crystallographic c-axis with a degree of linear polarization of 0.84 +/- 0.12. Such InGaN QDs incorporated in a nanowire system meet many of the requirements for implementation into quantum information systems and could potentially open the door to wholly new device concepts.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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