InGaN偏振单光子源的辐射寿命缩短和慢时标光谱扩散
Reduction of radiative lifetime and slow-timescale spectral diffusion in InGaN polarized single-photon sources
摘要：
非极性（11-20）a面量子点（QDs）是在> 200 K的片上超快偏振单光子产生和高温半导体量子点物理研究中的强有力候选材料。在这项工作中，我们报告的进展，在a面InGaN量子点的生长与准双温方法，产生光滑的外延层和显着减少的载流子捕获站点附近的量子点。光学表征已经证实了这种量子点发射偏振单光子的能力，并且与以前的量子点相比，我们已经记录了约45%的平均辐射寿命缩短和65%的慢时标光谱扩散减少。这种生长方法是非极性a面InGaN平台的重要发展，在单光子，激光和基础研究方面开辟了更多的可能性。
英文摘要：
Non-polar (11-20) a-plane quantum dots (QDs) are strong candidates for both > 200 K on-chip ultrafast polarized single-photon generation and the investigation of high temperature semiconductor QD photophysics. In this work, we report progress in the growth of a-plane InGaN QDs with a quasi-two-temperature method, which produces smooth epilayers and significantly reduced carrier trapping sites in the proximity of the QDs. Optical characterization has confirmed the ability of such QDs to emit polarized single photons and we have recorded a ~ 45% shorter average radiative lifetime and 65% reduction in the slow-timescale spectral diffusion compared to previous QDs. This growth method is an important development of the non-polar a-plane InGaN platform, opening up more possibilities in single-photon, lasing, and fundamental investigations.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
