Te掺杂GaAsSb和GaAsSbN纳米线中载流子动力学和输运的相关研究
Revealing Charge Carrier Dynamics and Transport in Te-Doped GaAsSb and GaAsSbN Nanowires by Correlating Ultrafast Terahertz Spectroscopy and Optoelectronic Characterization
摘要：
III-V族半导体纳米线生长的最新进展为纳米级光电子器件的应用带来了巨大的希望。最近，发现在III-V族半导体纳米线中掺入少量的氮（N）可以有效地使其工作波长红移并针对特定应用定制其电子性质。然而，理解N掺入对非平衡载流子动力学和半导体NW中的输运的影响对于实现高效的半导体NW器件是至关重要的。在这项工作中，超快光泵太赫兹（THz）探测光谱（OPTP）和电气特性已被用来研究非平衡载流子动力学和平衡输运的Te掺杂的GaAsSb和稀氮化物GaAsSb纳米线，与这些结果与偏置下的光响应和低频噪声特性的目标。氮掺入GaAsSb纳米线导致载流子散射率的显着增加，导致载流子迁移率的严重降低。载流子复合寿命分别为33 ps和147 ps的GaAsSbN和GaAsSb纳米线，使用超快OPTP测量。载流子寿命和光致光学电导率的减少是由于N诱导缺陷的存在，导致稀氮化物纳米线相对于非氮化物纳米线的电学和光学特性的劣化。最后，我们观察到两种NW材料的上升时间非常快，约为2 ps，直接影响了它们作为高速光电探测器的潜在用途。
英文摘要：
Recent advances in the growth of III-V semiconductor nanowires (NWs) hold great promise for nanoscale optoelectronic device applications. Recently, it was found that a small amount of nitrogen (N) incorporation in III-V semiconductor NWs can effectively red-shift their wavelength of operation and tailor their electronic properties for specific applications. However, understanding the impact of N incorporation on non-equilibrium charge carrier dynamics and transport in semiconducting NWs is critical in achieving efficient semiconducting NW devices. In this work, ultrafast optical pump-terahertz (THz) probe spectroscopy (OPTP) and electrical characterization have been used to study non-equilibrium carrier dynamics and equilibrium transport in Te-doped GaAsSb and dilute nitride GaAsSb NWs, with the goal of correlating these results with their photo-response under bias and their low-frequency noise characteristics. Nitrogen incorporation in GaAsSb NWs led to a significant increase in the carrier scattering rate, resulting in a severe reduction in carrier mobility. Carrier recombination lifetimes of 33 ps and 147 ps in GaAsSbN and GaAsSb NWs, respectively, were determined using ultrafast OPTP measurements. The reduction in the carrier lifetime and photoinduced optical conductivities are due to the presence of N-induced defects, leading to deterioration in the electrical and optical characteristics of dilute nitride NWs relative to the non-nitride NWs. Finally, we observed a very fast rise time of ~ 2 ps for both NW materials, directly impacting their potential use as high-speed photodetectors.
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