一种纳米制造的单片式路径分离电子干涉仪
A nanofabricated, monolithic, path-separated electron interferometer
摘要：
我们报告了一个自对准，单片电子干涉仪，由两个45 nm厚的硅层分离的20 $μ$ m。该干涉仪是用镓聚焦离子束铣在透射电子显微镜栅上的单晶硅悬臂梁上制作的。使用这种干涉仪，我们证明光束路径分离，并获得在马赫-曾德尔几何干涉条纹，在一个未经修改的200千伏的透射电子显微镜。条纹具有0.32 nm的周期，其对应于硅的$\left[\bar{1}\bar{1}1\right]$晶格平面，并且最大对比度为15%。这种设计可以扩展到毫米级，并用于电子全息术。它还可以用于进行基础物理实验，例如与电子的无相互作用测量。
英文摘要：
We report a self-aligned, monolithic electron interferometer, consisting of two 45 nm thick silicon layers separated by 20 $μ$m. This interferometer was fabricated from a single crystal silicon cantilever on a transmission electron microscope grid by gallium focused ion-beam milling. Using this interferometer, we demonstrate beam path-separation, and obtain interference fringes in a Mach-Zehnder geometry, in an unmodified 200 kV transmission electron microscope. The fringes have a period of 0.32 nm, which corresponds to the $\left[\bar{1}\bar{1}1\right]$ lattice planes of silicon, and a maximum contrast of 15 %. This design can potentially be scaled to millimeter-scale, and used in electron holography. It can also be applied to perform fundamental physics experiments, such as interaction-free measurement with electrons.
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