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arXiv 1606.03038cond-mat.mes-hall
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用第一性原理得到的Wannier哈密顿量计算二维材料中的Landau能级

Landau Levels in 2D materials using Wannier Hamiltonians obtained by first principles

J. L. Lado, J. Fernandez-Rossier

摘要:

我们提出了一种方法来计算朗道能级和相应的边缘态的二维(2D)晶体作为一个出发点,其电子结构,从标准的密度泛函理论(DFT)。DFT哈密顿量表示在最大局部化Wannier函数的基础上。这定义了一个紧束缚的哈密顿量,可以用来描述其他结构,如带状,只要忽略原子尺度的边缘细节。轨道磁场的影响,使用Peierls替换的跳跃矩阵元素。在带状几何中实施这种方法,我们获得了一系列二维晶体的朗道能级和色散边缘态,包括石墨烯,氮化硼,MoS $_2$,黑磷,硒化铟和MoO $_3$。我们的程序可以很容易地用于任何其他二维晶体,并提供了一种替代有效的质量描述。

英文摘要:

We present a method to calculate the Landau levels and the corresponding edge states of two dimensional (2D) crystals using as a starting point their electronic structure as obtained from standard density functional theory (DFT). The DFT Hamiltonian is represented in the basis of maximally localized Wannier functions. This defines a tight-binding Hamiltonian for the bulk that can be used to describe other structures, such as ribbons, provided that atomic scale details of the edges are ignored. The effect of the orbital magnetic field is described using the Peierls substitution in the hopping matrix elements. Implementing this approach in a ribbon geometry, we obtain both the Landau levels and the dispersive edge states for a series of 2D crystals, including graphene, Boron Nitride, MoS$_2$ , Black Phosphorous, Indium Selenide and MoO$_3$ . Our procedure can readily be used in any other 2D crystal, and provides an alternative to effective mass descriptions.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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