BN包覆准一维TaSe3金属纳米线的击穿电流密度：互连应用前景
Breakdown Current Density in BN-Capped Quasi-1D TaSe3 Metallic Nanowires: Prospects of Interconnect Applications
摘要：
我们报告的调查结果的载流能力的纳米线制成的准一维范德华金属三硒化钽覆盖准二维氮化硼。化学气相传输方法，然后化学和机械剥离，用于制造毫米长的TaSe 3线的横向尺寸在20至70 nm的范围内。电气测量表明，TaSe 3/h-BN纳米线异质结构的击穿电流密度超过10 MA/cm 2，比铜的击穿电流密度高出一个数量级。一些器件表现出有趣的台阶状击穿，这可以用纳米线的原子线束结构来解释。TaSe 3的准一维单晶性质导致低表面粗糙度和不存在晶界;这些特征可能使这些线的横向尺寸缩小到几nm范围内。这些结果表明，准一维范德瓦尔斯金属具有潜在的应用在最终缩小的本地互连。
英文摘要：
We report results of investigation of the current-carrying capacity of nanowires made from the quasi-1D van der Waals metal tantalum triselenide capped with quasi-2D boron nitride. The chemical vapor transport method followed by chemical and mechanical exfoliation were used to fabricate mm-long TaSe3 wires with lateral dimensions in the 20 to 70 nm range. Electrical measurements establish that TaSe3/h-BN nanowire heterostructures have a breakdown current density exceeding 10 MA/cm2 - an order-of-magnitude higher than that in copper. Some devices exhibited an intriguing step-like breakdown, which can be explained by the atomic thread bundle structure of the nanowires. The quasi-1D single crystal nature of TaSe3 results in low surface roughness and the absence of grain boundaries; these features potentially can enable the downscaling of these wires to lateral dimensions in the few-nm range. These results suggest that quasi-1D van der Waals metals have potential for applications in the ultimately downscaled local interconnects.
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