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arXiv 1408.3753cond-mat.mes-hallcond-mat.mtrl-sci
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二维TaSe2金属晶体:自旋轨道散射长度和击穿电流密度

Two-Dimensional TaSe2 Metallic Crystals: Spin-Orbit Scattering Length and Breakdown Current Density

Adam T. Neal, Yuchen Du, Han Liu, Peide D. Ye

摘要:

通过对二维层状2 H-TaSe_2金属晶体中弱反定域化现象的详细表征,确定了这种强自旋轨道相互作用材料的自旋轨道散射长度。通过拟合所测得的磁导率,确定了2 H-TaSe_2在少层薄膜中的自旋轨道散射长度为17 nm。这种小的自旋-轨道散射长度与广泛用于研究自旋霍尔效应的Pt的自旋-轨道散射长度相当,并且表明TaSe 2用于自旋霍尔效应器件的潜力。除了强的自旋-轨道耦合之外,材料还必须支持大的电荷电流以经由自旋霍尔效应实现自旋转移力矩。因此,我们表征了TaSe 2在空气中的室温击穿电流密度,其中最佳击穿电流密度达到3.7 $\times$ 10 $^7$ A/cm $^2$。这种大的击穿电流进一步表明TaSe 2用于自旋扭矩器件和二维器件互连应用的潜力。

英文摘要:

We have determined the spin-orbit scattering length of two-dimensional layered 2H-TaSe2 metallic crystals by detailed characterization of the weak anti-localization phenomena in this strong spin-orbit interaction material. By fitting the observed magneto-conductivity, the spin-orbit scattering length for 2H-TaSe2 is determined to be 17 nm in the few-layer films. This small spin-orbit scattering length is comparable to that of Pt, which is widely used to study the spin Hall effect, and indicates the potential of TaSe2 for use in spin Hall effect devices. In addition to strong spin-orbit coupling, a material must also support large charge currents to achieve spin-transfer-torque via the spin Hall effect. Therefore, we have characterized the room temperature breakdown current density of TaSe2 in air, where the best breakdown current density reaches 3.7$\times$10$^7$ A/cm$^2$. This large breakdown current further indicates the potential of TaSe2 for use in spin-torque devices and two-dimensional device interconnect applications.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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