Possibilities of turning intrinsically n-type oxide semiconductors like ZnO and Zn$_{1-x}$Mg$_x$O into p-type materials are investigated. Motivated by recent experiments on Zn$_{1-x}$Mg$_x$O doped with nitrogen we analyze the electronic defect levels of point defects N$_{\rm O}$, v$_{\rm Zn}$, and N$_{\rm O}$-v$_{\rm Zn}$ pairs in ZnO and Zn$_{1-x}$Mg$_x$O by means of self-interaction-corrected density functional theory calculations. We show how the interplay of defects can lead to shallow acceptor defect levels, although the levels of individual point defects N$_{\rm O}$ are too deep in the band gap for being responsible for p-type conduction. We relate our results to p-type conduction paths at grain boundaries seen in polycrystalline ZnO and develop an understanding of a p-type mechanism which is common to ZnO, Zn$_{1-x}$Mg$_x$O, and related materials.
Two-dimensional electron gases (2DEGs) at the ZnO/ZnMgO interface are promising for applications in spintronics and quantum computing due to the combination of low spin-orbit coupling and high electron mobility. Growing high mobility 2DEGs requires high quality substrates with low impurity densities. In this work we demonstrate a ZnO substrate sample treatment combining high temperature rapid thermal annealing and chemical etching to improve the surface quality for the subsequent growth of 2DEGs. This process enables the growth of a 2DEG with low-temperature mobility of $4.8\times10^4$~cm$^2$V…
The Zn K-edge X-ray absorption spectroscopy has been used to investigate in situ the decomposition of zinc peroxide (ZnO$_2$) to zinc oxide (ZnO). Principal component and linear combination analyses of the EXAFS spectra have been employed to identify the phase composition of the oxide upon heating to 900$^\circ$C. Only the ZnO$_2$ phase has been found up to 180$^\circ$C, whereas only the nanocrystalline ZnO phase has occurred above 250$^\circ$C. Detailed structural information on the temperature dependence of the local environment of zinc atoms has been obtained using the reverse Monte Carlo s…
Zinc oxide which is a n-type semiconducting metal oxide (SMO) has been a promising material for detecting ethanol vapor. However, pure ZnO based ethanol sensors often suffer from high working temperature, cross sensitivity towards methanol and poor stability against humidity. Doping ZnO with various metal ions has been widely explored as a proficient approach to improve its ethanol sensing properties, while anionic dopants have been rarely considered. Here in we demonstrate the effect of nitrogen doping on the ethanol sensing characteristics of ZnO thin films. Nitrogen doped ZnO (N-ZnO) thin f…
Importance of strain reduction in improvement of optical transmission and conductance in Si4+ doped ZnO: a probable new moisture resistant Transparent Conductive Oxide
A density functional theory study of substitutional carbon impurities in ZnO has been performed, using both the generalized gradient approximation (GGA) and a hybrid functional (HSE06) as exchange-correlation functional. It is found that the non-spinpolarized C$_\mathrm{Zn}$ impurity is under almost all conditions thermodynamically more stable than the C$_\mathrm{O}$ impurity which has a magnetic moment of $2μ_{\mathrm{B}}$, with the exception of very O-poor and C-rich conditions. This explains the experimental difficulties in sample preparation in order to realize $d^{0}$-ferromagnetism in C-…
The Schottky barrier heights (SBHs) of defect-free interfaces of ZnO, CdO, MgO and SrO with various metals and different terminations are investigated by density functional supercell calculations. The oxide bands are corrected for their density functional band gap error by applying U-type treatment to their metal-d and O-p states where necessary. The p-type SBHs are found to decrease linearly with increasing metal work function. The pinning factor S of the non-polar and polar interfaces are similar for each oxide. S is found to be 0.26, 0.56, 0.74 and 0.96 for CdO, ZnO, MgO and SrO, respective…
Elucidating the underlying principles behind band gap engineering is paramount for the successful implementation of semiconductors in photonic and optoelectronic devices. Recently it has been shown that the band gap of a wide and direct band gap semiconductor, such as ZnO, can be modified upon co-crystallization with amino acids, with the role of the biomolecules remaining unclear. Here, by probing and modeling the light emitting properties of ZnO-amino acid co-crystals, we identify the amino acids role on this band gap modulation and demonstrate their effective chirality transfer to the inter…
Insights into the room temperature magnetism of ZnO/Co3O4 mixtures
ZnO基稀磁半导体室温类铁磁行为的起源仍然是一个不清楚的话题。本工作集中在外观的RT磁矩在刚刚混合的ZnO/Co 3 O 4混合物未经热处理。在这项研究中，它表明，磁性似乎是有关的Co 3 O 4纳米粒子的表面还原，其中，反铁磁Co 3 O 4纳米粒子（核心）被包围的CoO-样壳。这种奇异的表面磁性也在其他含有半导体（如TiO 2）和绝缘体（如Al 2 O 3）的混合物中发现。
ZnO is a promising candidate as an environment friendly thermoelectric (TE) material. However, the poor TE figure of merit (zT) needs to be addressed to achieve significant TE efficiency for commercial applications. Here we demonstrate that selective enhancement in phonon scattering leads to increase in zT of RGO encapsulated Al-doped ZnO core shell nanohybrids, synthesized via a facile and scalable method. The incorporation of 1 at% Al with 1.5 wt% RGO into ZnO (AGZO) has been found to show significant enhancement in zT (=0.52 at 1100 K) which is an order of magnitude larger compared to that …
This paper reports the application of zinc oxide (ZnO) in the pressure sensors that can be integrated with a microelectromechanical system (MEMS). ZnO is one of the materials that has received a great deal of attention due to its unique properties of being a semiconductor with wide bandgap and piezoelectric effects. The simpler crystal growth mechanisms of ZnO have resulted in a lower cost of ZnO-based sensors. Different types of pressure sensors based on ZnO sensing elements have also been explored. A thin circular ZnO film was simulated as a piezoelectric sensor employing the finite element …
Heterostructures of Co-doped ZnO and Permalloy were investigated for their static and dynamic magnetic interaction. The highly Co-doped ZnO is paramagentic at room temperature and becomes an uncompensated antiferromagnet at low temperatures, showing a narrowly opened hysteresis and a vertical exchange bias shift even in the absence of any ferromagnetic layer. At low temperatures in combination with Permalloy an exchange bias is found causing a horizontal as well as vertical shift of the hysteresis of the heterostructure together with an increase in coercive field. Furthermore, an increase in t…
Ni incorporation has been studied in a comprehensive range of Zn/Co-based magnetic oxides to elucidate it valence state and lattice incorporation. The resulting structural and magnetic properties are studied in detail. To the one end Ni in incorporated by in-diffusion as well as reactive magnetron co-sputtering in wurtzite ZnO where only the Ni-diffused ZnO exhibits significant conductivity. This is complemented by Ni and Co codoping of ZnO leading. To the other end, the ZnCo$_2$O$_4$ spinel is co-doped with varying amounts of Ni. In the wurtzite oxides Ni is exclusively found on tetrahedral l…
Recently the point defect responsible for the intra-3$d$ luminescence of cobalt in doped ZnO samples has been indentified\,\cite{pssb2019}. In this work we further extend our investigation to other point defects in Co-doped ZnO. We use density-functional theory and GW calculations to determined the orbital-resolved band structure of cobalt doped zinc oxide (ZnO). We show that mainly O-p and Co-d orbitals take part in the process and confirm that an oxygen interstitial nearby a cobalt atom is a likely defect to occur in Co-implanted ZnO samples. We also rule out that other common point defects …
Crystalline wurtzite zinc oxide (w-ZnO) can be used as a wide band gap semiconductor for light emitting devices and for transparent or high temperature electronics. The use of amorphous zinc oxide (a-ZnO) can be an advantage in these applications. In this paper we report on X-ray amorphous a-ZnOx thin films (~500 nm) deposited at cryogenic temperatures by reactive magnetron sputtering. The substrates were cooled by a nitrogen flow through the copper substrate holder during the deposition. The films were characterized by X-ray diffraction (XRD), Raman, infrared, UV-Vis-NIR spectroscopies, and e…
