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arXiv 1602.01276cond-mat.str-el
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反铁磁有序Mott绝缘体的电荷动力学

Charge dynamics of the antiferromagnetically ordered Mott insulator

X. J. Han, Y. Liu, Z. Y. Liu, X. Li, J. Chen, Z. Y. Xie, B. Normand, T. Xiang

AI总结:

该研究采用隶费米子表述结合自洽玻恩近似,研究零温正方晶格半填充Hubbard模型的反铁磁Mott绝缘体电荷动力学,揭示了自旋涨落对电荷自由度的影响及相关物理特性。

摘要:

我们研究了零温下正方晶格上半填充Hubbard模型的电荷动力学。我们采用隶费米子表述,其中电荷自由度由费米型空穴子(holon)和双占据子(doublon)表示,而玻色型自旋自由度被假定由反铁磁Heisenberg模型描述。基态具有长程磁(Néel)序,其Mott绝缘特性是空穴子-双占据子束缚态形成的结果。在此框架内,我们在自洽玻恩近似下计算了平均双占据数、电子态密度和谱函数。计算重现了下Hubbard带和上Hubbard带,在其下边缘有谱权重转移到相干准粒子带中,且与空穴子-双占据子束缚相关的Mott能隙因空穴子、双占据子与磁振子的相互作用而发生重整化。我们计算了化学势处格林函数的零点以讨论Luttinger体积,并表明自能的极点反映了具有自旋重整化跃迁参数的底层准粒子色散。光导率结果将光学能隙与绝缘系统的Mott能隙联系起来。我们得出结论,对自旋涨落作用于电荷自由度的自洽处理能够捕捉反铁磁Mott-Hubbard绝缘体的所有基本物理特性。

英文摘要:

We study the charge dynamics of the half-filled Hubbard model on the square lattice at zero temperature. We employ a slave-fermion formulation in which the charge degrees of freedom are represented by fermionic holons and doublons and the bosonic spin degrees of freedom are assumed to be described by the antiferromagnetic Heisenberg model. The ground state has long-ranged magnetic (Néel) order and its Mott-insulating characteristics are the consequence of holon-doublon bound-state formation. Within this framework, we calculate the average double occupancy, the electron density of states, and the spectral function in the self-consistent Born approximation. The lower and upper Hubbard bands are reproduced, there is spectral-weight transfer into a coherent quasiparticle band at their lower edges, and the Mott gap, associated with holon-doublon binding, is renormalized due to the interactions of the holons and doublons with the magnons. We compute the zeros of the Green function at the chemical potential to discuss the Luttinger volume and show that the poles of the self-energy reflect the underlying quasiparticle dispersion with a spin-renormalized hopping parameter. Optical conductivity results relate the optical gap to the Mott gap of the insulating system. We conclude that a self-consistent treatment of the spin fluctuation effects on the charge degrees of freedom captures all the essential physics of the antiferromagnetic Mott-Hubbard insulator.

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