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arXiv 1508.01656cond-mat.supr-con
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压力对BiS2-Based超导体Bi2(O,F)S2超导性质的影响

Pressure Effects on Superconducting Properties of the BiS2-Based Superconductor Bi2(O,F)S2

Tomoyuki Okada, Hiraku Ogino, Jun-ichi Shimoyama, Kohji Kishio, Nao Takeshita, Naoki Shirakawa, Akira Iyo, Hiroshi Eisaki

摘要:

通过高压电阻率测量和高压退火两种方法研究了最近发现的BiS 2基超导体Bi 2(O,F)S2(Tc = 5.1K)的压力效应。这两种方法对Bi_2(O,F)S_2超导性能的影响是显著不同的,虽然在这两种方法中,流体静压是通过双砧型装置施加到样品上的。在高压电阻率测量中,Tc以-1.2KGPa-1的速率线性下降。与此相反,最佳掺杂样品在2GPa和470°C下高压退火后,尽管晶格参数发生了显著变化,但Tc仍保持在5.1K。此外,在高压退火后,在无氟的Bi 2 OS 2中观察到超导性。这些结果表明,高压退火将导致对层状化合物的物理性能的独特影响。

英文摘要:

Pressure effects on a recently discovered BiS2-based superconductor Bi2(O,F)S2 (Tc = 5.1 K) were examined via two different methods; high pressure resistivity measurement and high pressure annealing. The effects of these two methods on the superconducting properties of Bi2(O,F)S2 were significantly different although in both methods hydrostatic pressure is applied to the sample by the cubic-anvil-type apparatus. In high pressure resistivity measurement, Tc linearly decreased at the rate of -1.2 K GPa-1. In contrast, the Tc of 5.1 K is maintained after high pressure annealing under 2 GPa and 470°C of optimally doped sample despite significant change of lattice parameters. In addition, superconductivity was observed in fluorine-free Bi2OS2 after high pressure annealing. These results suggest that high pressure annealing would cause a unique effect on physical properties of layered compounds.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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