Spin-orbit torques for current parallel and perpendicular to a domain wall
Tomek Schulz, Oscar Alejos, Eduardo Martinez, Kjetil M. D. Hals, Karin Garcia, Kyujoon Lee, Roberto Lo Conte, Gurucharan V. Karnad, Simone Moretti, Berthold Ock… 展开作者
Tomek Schulz, Oscar Alejos, Eduardo Martinez, Kjetil M. D. Hals, Karin Garcia, Kyujoon Lee, Roberto Lo Conte, Gurucharan V. Karnad, Simone Moretti, Berthold Ocker, Dafiné Ravelosona, Arne Brataas, Mathias Kläui
We report field- and current-induced domain wall (DW) depinning experiments in Ta/Co20Fe60B20/MgO nanowires through a Hall cross geometry. While purely field-induced depinning shows no angular dependence on in-plane fields, the effect of the current depends crucially on the internal DW structure, which we manipulate by an external magnetic in-plane field. We show for the first time depinning measurements for a current sent parallel to the DW and compare its depinning efficiency with the conventional case of current flowing perpendicularly to the DW. We find that the maximum efficiency is similar for both current directions within the error bars, which is in line with a dominating damping-like spin-orbit torque (SOT) and indicates that no large additional torques arise for currents parallel to the DW. Finally, we find a varying dependence of the maximum depinning efficiency angle for different DWs and pinning levels. This emphasizes the importance of our full angular scans compared to previously used measurements for just two field directions (parallel and perpendicular to the DW) and shows the sensitivity of the spin-orbit torque to the precise DW structure and pinning sites.
We demonstrate efficient current induced spin orbit torque switching in perpendicularly magnetized epitaxial MgO(001)//Pd/Co2FeAl/MgO heterostructures grown by magnetron sputtering. The advantage of such heterostructures for spin orbit torque MRAM devices is that they allow a unique combination of critical ingredients: i) low resistivity required for reduced electric energy consumption during writing, ii) high TMR ratio required for efficient reading and iii) strong perpendicular magnetic anisotropy for increased thermal stability.
The oscillation properties of a spin torque oscillator consisting of a perpendicularly magnetized free layer and an in-plane magnetized pinned layer are studied based on an analysis of the energy balance between spin torque and damping. The critical value of an external magnetic field applied normal to the film plane is found, below which the controllable range of the oscillation frequency by the current is suppressed. The value of the critical field depends on the magnetic anisotropy, the saturation magnetization, and the spin torque parameter.
The magnetization dynamics of spin torque oscillator (STO) consisting of a perpendicularly magnetized free layer and an in-plane magnetized pinned layer was studied by solving the Landau-Lifshitz-Gilbert equation. We derived the analytical formula of the relation between the current and the oscillation frequency of the STO by analyzing the energy balance between the work done by the spin torque and the energy dissipation due to the damping. We also found that the field-like torque breaks the energy balance, and change the oscillation frequency.
We simulate the spin torque-induced reversal of the magnetization in thin disks with perpendicular anisotropy at zero temperature. Disks typically smaller than 20 nm in diameter exhibit coherent reversal. A domain wall is involved in larger disks. We derive the critical diameter of this transition. Using a proper definition of the critical voltage, a macrospin model can account perfectly for the reversal dynamics when the reversal is coherent. The same critical voltage appears to match with the micromagnetics switching voltage regardless of the switching path.
The field-free spin-orbit torque induced 180° reorientation of perpendicular magnetization is beneficial for the high performance magnetic memory. The antiferromagnetic material (AFM) can provide higher operation speed than the ferromagnetic counterpart. In this paper, we propose a trilayer AFM/Insulator/Heavy Metal structure as the AFM memory device. We show that the field-free switching of the AFM with perpendicular Néel vector can be achieved by using two orthogonal currents, which provide the uniform damping-like torque and stagger field-like torque, respectively. The reversible switching …
We demonstrate the reduction of critical spin-transfer torque (STT) switching currents in Co-Fe-B/MgO based magnetic tunnel junctions (MTJ) with perpendicular magnetization anisotropy (PMA). The junctions yield tunnel magnetoresistance (TMR) ratios of up to 64% at 4 monolayer (ML) tunnel barrier thickness. In this paper, the reduction of the critical switching current density is studied. By optimizing the applied bias field during DC-STT measurements, ultra low critical switching current densities of less than 20 kA/cm$^2$, even down to 9 kA/cm$^2$, are found. With the reduced switching curren…
The magnetization dynamics equation predicts that a domain wall that changes structure should undergo a displacement by itself - automotion - due to the relaxation of the linear momentum that is associated with the wall structure. We experimentally demonstrate this effect in soft nanostrips,transforming under spin transfer torque a metastable asymmetric transverse wall into a vortex wall. Displacements more than three times as large as under spin transfer torque only are measured for 1~ns pulses. The results are explained by analytical and numerical micromagnetics. Their relevance to domain wa…
We study spin accumulation and spin transfer torque in a domain wall by solving the Boltzmann equation with a diffusion approximation. We obtained the analytical expressions of spin accumulation and spin transfer torque. Both the adiabatic and the non-adiabatic components of the spin transfer torque oscillate with the thickness of the domain wall. We show that the oscillation plays a dominant role in the non-adiabatic torque when the domain wall thickness is less than the spin-flip length, which is defined by the product of the Fermi velocity and the spin-flip scattering time.
It is demonstrated by means of the optimal control theory that the energy cost of the spin-orbit torque induced reversal of a nanomagnet with perpendicular anisotropy can be strongly reduced by proper shaping of both in-plane components of the current pulse. The time-dependence of the optimal switching pulse that minimizes the energy cost associated with Joule heating is derived analytically in terms of the required reversal time and material properties. The optimal reversal time providing a tradeoff between the switching speed and energy efficiency is obtained. A sweet-spot balance between th…
We study deterministic magnetic reversal of a perpendicularly magnetized Co layer in a Co/MgO/Ta nano-square driven by spin Hall torque from an in-plane current flowing in an underlying Pt layer. The rate-limiting step of the switching process is domain-wall (DW) depinning by spin Hall torque via a thermally-assisted mechanism that eventually produces full reversal by domain expansion. An in-plane applied magnetic field collinear with the current is required, with the necessary field scale set by the need to overcome DW chirality imposed by the Dzyaloshinskii-Moriya interaction. Once Joule hea…
Spin-orbit torque in magnetic domain walls was investigated by solving the Pauli-Schrödinger equation for the itinerant electrons. The Rashba interaction considered is derived from the violation of inversion symmetry at interfaces between ferromagnets and heavy metals. In equilibrium, the Rashba spin-orbit interaction gives rise to a torque corresponding to the Dzyaloshinskii-Moriya interaction. When there is a current flowing, the spin-orbit torque experienced by the itinerant electrons in short domain walls has both field-like and damping-like components. However, when the domain wall width …
We study ns scale spin-torque-induced switching in perpendicularly magnetized tunnel junctions (pMTJ). Although the switching voltages match with the macrospin instability threshold, the electrical signatures of the reversal indicate the presence of domain walls in junctions of various sizes. In the antiparallel (AP) to parallel (P) switching, a nucleation phase is followed by an irreversible flow of a wall through the sample at an average velocity of 40 m/s with back and forth oscillation movements indicating a Walker propagation regime. A model with a single-wall locally responding to the sp…
In a nanopillar with dipolarly coupled vortices, we present an experimental and simulation study to understand how the interplay between the bias field and spin transfer torque impacts reversal of the vortex cores. We find that, depending on the current values, vortex cores might experience different physical mechanisms for their reversal, namely a static or a dynamic switching. We believe that our results might be useful in the context of vortex based non volatile memories, as a current controlled selective core switching is proposed.
The spin transfer torque generated by a spin-polarized current can induce the shift of the magnetic domain-wall position. In this work, we study theoretically the current-induced domain-wall motion by using the collective coordinate approach [Gen Tatara and Hiroshi Kohno, Phys. Rev. Lett. 92, 86601 (2004)]. The approach is extended to include not only the domain-wall position and the polarization angle changes but also the domain-wall width variation. It is demonstrated that the width variation affects the critical current.
We study the theoretical conditions to excite a stable self-oscillation in a spin torque oscillator with an in-plane magnetized free layer and a perpendicularly magnetized pinned layer in the presence of magnetic field pointing in an arbitrary direction. The linearized Landau-Lifshitz-Gilbert (LLG) equation is found to be inapplicable to evaluate the threshold between the stable and self-oscillation states because the critical current density estimated from the linearized equation is considerably larger than that found in the numerical simulation. We derive a theoretical formula of the thresho…
Memristors are non-volatile nano-resistors. Their resistance can be tuned by applied currents or voltages and set to a large number of levels between two limit values. Thanks to these properties, memristors are ideal building blocks for a number of applications such as multilevel non-volatile memories and artificial nano-synapses, which are the focus of this work. A key point towards the development of large scale memristive neuromorphic hardware is to build these neural networks with a memristor technology compatible with the best candidates for the future mainstream non-volatile memories. He…
Effects of Longitudinal Spin Current Density Gradient on Spin-Orbit Torque Switching of Perpendicular Magnetization
State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences（中国科学院半导体研究所半导体物理与芯片技术国家重点实验室）；Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences（中国科学院大学材料科学与光电技术研究中心）
Thermally assisted motion of magnetic domain wall under spin torque is studied theoretically. It is shown that the wall velocity $v$ depends exponentially on the spin current, $\Is$, below the threshold value, in the same way as in a thermally activated motion driven by a force. A novel property of the spin torque driven case at low temperature is that the linear term in spin current is universal, i.e., $\ln v \sim \frac{π\hbar}{2e}(\Is/\kB T)$. This behavior, which is independent of pinning and material constants, could be used to confirm experimentally the spin torque as the driving mechanis…
GaMnAs-based magnetic tunnel junction (MTJ) devices are characterized by in-plane and perpendicular-toplane magnetotransport at low temperatures. Perpendicular-to-plane transport reveals the typical tunneling magnetotransport (TMR) signal. Interestingly, a similar TMR signature is observed in the in-plane transport signal. Here, low-ohmic shunting of the MTJ by the top contact results in significant perpendicular-to-plane current paths. This effect allows the determination of TMR ratios of MTJs based on a simplified in-plane measurement. However, the same effect can lead to an inaccurate deter…
Spin transfer torque in a two dimensional electron gas system without space inversion symmetry was theoretically investigated by solving the Pauli-Schrödinger equation for the itinerant electrons inside magnetic domain walls. Due to the presence of the Rashba spin-orbit coupling induced by the broken inversion symmetry, the spin transfer torque is chiral and the nonadiabaticity, which is defined to measure the relative importance of the nonadiabatic, field-like torque to the adiabatic, damping-like torque, exhibits an inverse power law decay as the domain wall width is increased. This algebrai…
We discover that the way spin-waves exert magnetic torques in multiferroic materials can cause not only domain wall motion, but also magnetization dynamics for homogeneous magnetization textures. Interestingly, the domain wall motion can be controlled via purely electrical means with the spin-waves being generated by an ac electric field $E$ while the direction of the wall motion also is sensitive to an applied dc $E$ field. Moreover, we determine the interaction between spin-transfer torque from an electric current and a magnetic domain wall in multiferroics and show that the Walker breakdown…
The critical current needed to destabilize the magnetization of a perpendicular ferromagnet via the spin Hall effect is studied. Both the dampinglike and fieldlike torques associated with the spin current generated by the spin Hall effect is included in the Landau-Lifshitz-Gilbert equation to model the system. In the absence of the fieldlike torque, the critical current is independent of the damping constant and is much larger than that of conventional spin torque switching of collinear magnetic systems, as in magnetic tunnel junctions. With the fieldlike torque included, we find that the crit…
Spin valves incorporating perpendicularly magnetized materials are promising structures for memory elements and high-frequency generators. We report the angular dependence of the spin-transfer torque in spin valves with perpendicular equilibrium magnetization computed by first-principles circuit theory and compare results with experiments by W.H. Rippard c.s. [Phys. Rev. B 81, 014426 (2010)] on the CoFe|Cu|CoNi system. Furthermore, we predict a non-monotonous ("wavy") spin-transfer torque when the Cu spacer is replaced by a Ru layer.
We investigate the domain wall dynamics of a ferromagnetic wire under the combined influence of a spin-polarized current and magnonic spin-transfer torque generated by an external field, taking also into account Rashba spin-orbit coupling interactions. It is demonstrated that current-induced motion of the domain wall may be completely reversed in an oscillatory fashion by applying a magnonic spin-transfer torque as long as the spin-wave velocity is sufficiently high. Moreover, we show that the motion of the domain wall may be fully terminated by means of the generation of spin-waves, suggestin…
To address thermal stability issues for spintronic devices with a reduced size, we investigate spin-orbit torque in Co/Pt multilayers with strong perpendicular magnetic anisotropy. Note that the spin-orbit torque arises from the global imbalance of the spin currents from the top and bottom interfaces for each Co layer. By inserting Ta or Cu layers to strengthen the top-down asymmetry, the spin-orbit torque efficiency can be greatly modified without compromised perpendicular magnetic anisotropy. Above all, the efficiency builds up as the number of layers increases, realizing robust thermal stab…
Within the s-d model description, we derive the current-driven spin torque in a ferromagnet, taking explicitly into account a spin-relaxing Caldeira-Leggett bath coupling to the s-electrons. We derive Bloch-Redfield equations of motion for the s-electron spin dynamics, and formulate a systematic gradient expansion to obtain non-adiabatic (higher-order) corrections to the well-known adiabatic (first-order) spin torque. We provide simple analytical expressions for the second-order spin torque. The theory is applied to current-driven domain wall motion. Second-order contributions imply a deformat…
Understanding the magnetization dynamics induced by spin transfer torques in perpendicularly magnetized magnetic tunnel junction nanopillars and its dependence on material parameters is critical to optimizing device performance. Here we present a micromagnetic study of spin-torque switching in a disk-shaped element as a function of the free layer's exchange constant and disk diameter. The switching is shown to generally occur by 1) growth of the magnetization precession amplitude in the element center; 2) an instability in which the reversing region moves to the disk edge, forming a magnetic d…
Magnetic droplets are non-topological dynamical solitons that can be nucleated and sustained in nano-contact based spin torque nano-oscillators (NC-STNOs) with perpendicular anisotropy free layers. While originally predicted in all-perpendicular NC-STNOs, all experimental demonstrations have so far relied on orthogonal devices with an in-plane polarizing layer that requires a strong magnetic field for droplet nucleation. Here, we instead show the nucleation and sustained operation of magnetic droplets in all-perpendicular NC-STNOs in modest perpendicular fields and over a wide range of nano-co…
We calculate the interaction between two magnetic domain walls during their current-induced motion. This interaction produces a separation-dependent resistance and also a differential velocity, causing domains in motion to experience an effective attraction at large separations and an effective repulsion at short separations. In an intermediate range of currents the two domain walls will reach a natural equilibrium spacing that depends on the magnitude of the current flowing through the material.
Current-induced spin-orbit torques (SOTs) are of interest for fast and energy-efficient manipulation of magnetic order in spintronic devices. To be deterministic, however, switching of perpendicularly magnetized materials by SOT requires a mechanism for in-plane symmetry breaking. Existing methods to do so involve the application of an in-plane bias magnetic field, or incorporation of in-plane structural asymmetry in the device, both of which can be difficult to implement in practical applications. Here, we reported bias-field-free SOT switching in a single perpendicular CoTb layer with an eng…
Magnetization switching by current-induced spin-orbit torques (SOTs) is of great interest due to its potential applications for ultralow-power memory and logic devices. In order to be of technological interest, SOT effects need to switch ferromagnets with a perpendicular (out-of-plane) magnetization. Currently, however, this typically requires the presence of an in-plane external magnetic field, which is a major obstacle for practical applications. Here we report for the first time on SOT-induced switching of out-of-plane magnetized Ta/Co20Fe60B20/TaOx structures without the need for any exter…
The spin-orbit torque (SOT) arising from materials with large spin-orbit coupling promises a path for ultra-low power and fast magnetic-based storage and computational devices. We investigated the SOT from magnetron-sputtered BixSe(1-x) thin films in BixSe(1-x)/CoFeB heterostructures by using a dc planar Hall method. Remarkably, the spin Hall angle (SHA) was found to be as large as 18.83, which is the largest ever reported at room temperature (RT). Moreover, switching of a perpendicular CoFeB multilayer using SOT from the BixSe(1-x) has been observed with the lowest-ever switching current dens…
In magnetic wires with perpendicular anisotropy, moving domain with only current or only circularly polarized light requires a high power. Here, we propose to reduce it by using both short current pulses and femtosecond laser pulses simultaneously. The wires were made out of perpendicularly magnetized film of Pt/Co/Ni/Co/Pt. The displacement of the domain wall is found to be dependent on the laser helicity. Based on a quantitative analysis of the current-induced domain wall motion, the spin orbit torque contribution can be neglected when compared to the spin transfer torque contribution. The e…
We consider theoretically domain wall motion driven by spin-orbit and spin Hall torques. We find that it is possible to achieve universal absence of Walker breakdown for all spin-orbit torques using experimentally relevant spin-orbit coupling strengths. For spin-orbit torques other than the pure Rashba spin-orbit torque, this gives a linear current-velocity relation instead of a saturation of the velocity at high current densities. The effect is very robust and is found in both soft and hard magnetic materials, as well as in the presence of the Dzyaloshinskii-Moriya interaction and in coupled …
We present a circuit model to describe the electron transport through a domain wall in a ferromagnetic nanowire. The domain wall is treated as a coherent 4-terminal device with incoming and outgoing channels of spin up and down and the spin-dependent scattering in the vicinity of the wall is modelled using classical resistances. We derive the conductance of the circuit in terms of general conductance parameters for a domain wall. We then calculate these conductance parameters for the case of ballistic transport through the domain wall, and obtain a simple formula for the domain wall magnetores…
Spin-orbit torque provides a powerful means of manipulating domain walls along magnetic wires. However, the current density required for domain wall motion is still too high to realize low power devices. Here we experimentally demonstrate helicity-dependent domain wall motion by combining synchronized femtosecond laser pulses and short current pulses in Co/Ni/Co ultra-thin film wires with perpendicular magnetization. Domain wall can remain pinned under one laser circular helicity while depinned by the opposite circular helicity. Thanks to the all-optical helicity-dependent effect, the threshol…
We report a theoretical overview of the magnetic domain wall behavior under an electric current in infinitely-long nanotubes with azimuthal magnetization, combining the $1$D analytic model and micromagnetic simulations. We highlight effects that, besides spin-transfer torques already largely understood in flat strips, arise specifically in the tubular geometry: the \OErsted field and curvature-induced magnetic anisotropy resulting both from exchange and material growth. Depending on both the geometry of the tube and the strength of the azimuthal anisotropy, Bloch or Néel walls arise at rest, r…
The relative contributions of in-plane (damping-like) and out-of-plane (field-like) spin-transfer-torques in the magnetization switching of out-of-plane magnetized magnetic tunnel junctions (pMTJ) has been theoretically analyzed using the transformed Landau-Lifshitz (LL) equation with the STT terms. It is demonstrated that in a pMTJ structure obeying macrospin dynamics, the out-of-plane torque influences the precession frequency but it does not contribute significantly to the STT switching process (in particular to the switching time and switching current density), which is mostly determined b…
Perpendicularly magnetized nanowires exhibit distinct domain wall types depending on the geometry. Wide wires contain Bloch walls, narrow wires Néel walls. Here, the transition region is investigated by direct imaging of the wall structure using high-resolution spin-polarized scanning electron microscopy. An achiral intermediate wall type is discovered that is unpredicted by established theoretical models. With the help of micromagnetic simulations, the formation of this novel wall type is explained.
We report on an experimental study of current induced switching in perpendicular magnetic random access memory (MRAM) cells with variable resistance-area products (RAs). Our results show that in addition to spin transfer torque (STT), current induced self-heating and voltage controlled magnetic anisotropy also contribute to switching and can explain the RA dependencies of switching current density and STT efficiency. Our findings suggest that thermal optimization of perpendicular MRAM cells can result in significant reduction of switching currents.
In ferromagnetic trilayers, a spin-orbit-induced spin current can have a spin polarization of which direction is deviated from that for the spin Hall effect. Recently, magnetization switching in ferromagnetic trilayers has been proposed and confirmed by the experiments. In this work, we theoretically and numerically investigate the switching current required for perpendicular magnetization switching in ferromagnetic trilayers. We confirm that the tilted spin polarization enables field-free deterministic switching at a lower current than conventional spin-orbit torque or spin-transfer torque sw…
We report on the current-induced magnetization switching of a three-terminal perpendicular magnetic tunnel junction by spin-orbit torque and the read-out using the tunnelling magnetoresistance (TMR) effect. The device is composed of a perpendicular Ta/FeCoB/MgO/FeCoB stack on top of a Ta current line. The magnetization of the bottom FeCoB layer can be switched reproducibly by the injection of current pulses with density $5\times10^{11}$ A/m$^2$ in the Ta layer in the presence of an in-plane bias magnetic field, leading to the full-scale change of the TMR signal. Our work demonstrates the proof…
Current induced spin wave excitations in spin transfer torque nano-contacts are known as a promising way to generate exchange-dominated spin waves at the nano-scale. It has been shown that when these systems are magnetized in the film plane, broken spatial symmetry of the field around the nano-contact induced by the Oersted field opens the possibility for spin wave mode co-existence including a non-linear self-localized spin-wave bullet and a propagating mode. By means of micromagnetic simulations, here we show that in systems with strong perpendicular magnetic anisotropy (PMA) in the free lay…
We investigate the magnetization dynamics that arise when a thin-film ferromagnet is deposited on a topological insulator (TI), focusing in particular on domain-wall motion via current and the possibility of a spin-wave torque acting on the magnetization. We show analytically that the coupling between the magnetic domain wall and the TI removes the degeneracy of the wall profile with respect to its chirality and topological charge. Moreover, we find that the threshold for Walker breakdown of domain wall motion is substantially increased and determined by the interaction with the TI, allowing f…
We investigate how to facilitate the injection of domain walls in chiral ferromagnetic nanowires by electrical means. We calculate the critical current density above which domain walls are injected into the nanowire depending on the material parameters and the source of interaction including spin-transfer torques as well as spin-orbit torques. We demonstrate that the Dzyaloshinskii-Moriya interaction can significantly reduce the required critical current to inject the types of domain walls favored by the Dzyaloshinskii-Moriya interaction. We find that in chiral magnets it is only possible to s…
We model "soft" error rates for writing (WSER) and for reading (RSER) for perpendicular spin-torque memory devices by solving the Fokker-Planck equation for the probability distribution of the angle that the free layer magnetization makes with the normal to the plane of the film. We obtain: (1) an exact, closed form, analytical expression for the zero-temperature switching time as a function of initial angle; (2) an approximate analytical expression for the exponential decay of the WSER as a function of the time the current is applied; (3) comparison of the approximate analytical expression fo…
The domain wall motion in a magnetic nanowire is examined theoretically in the regime where the domain wall driving force is weak and its competition against disorders is assisted by thermal agitations. Two types of driving forces are considered; magnetic field and current. While the field induces the domain wall motion through the Zeeman energy, the current induces the domain wall motion by generating the spin transfer torque, of which effects in this regime remain controversial. The spin transfer torque has two mutually orthogonal vector components, the adiabatic spin transfer torque and the…
Control of magnetic domain wall movement by the spin-polarized current looks promising for creation of a new generation of magnetic memory devices. A necessary condition for this is the domain wall shift by a low-density current. Here I show that a strongly anisotropic exchange interaction between mobile heavy holes and localized magnetic moments enormously increases the current-induced torque on the domain wall as compared to systems with isotropic exchange. This enables one to control the domain wall motion by current density 10^4 A/cm^2 in ferromagnet/semiconductor hybrids. The experimental…
The reversal of perpendicular magnetization (PM) by electric control is crucial for high-density integration of low-power magnetic random-access memory (MRAM). Although the spin-transfer torque (STT) and spin-orbit torque (SOT) technologies have been used to switch the magnetization of a free layer with perpendicular magnetic anisotropy, the former has limited endurance because of the high current density directly through the junction, while the latter requires an external magnetic field or unconventional configuration to break the symmetry. Here we propose and realize the orbit-transfer torqu…
We study the motion of several types of domain wall profiles in spin-orbit coupled magnetic nanowires and also the influence of spin-orbit interaction on the ferromagnetic resonance of uniform magnetic films. We extend previous studies by fully considering not only the field-like contribution from the spin-orbit torque, but also the recently derived Slonczewski-like spin-orbit torque. We show that the latter interaction affects both the domain wall velocity and the Walker breakdown threshold non-trivially, which suggests that it should be accounted in experimental data analysis. We find that t…
To study the effect of spin-orbit coupling (SOC) on spin-transfer torque in magnetic materials, we have implemented two theoretical formalisms that can accommodate SOC. Using the "charge-pumping" formalism, we find two contributions to the out-of-plane spin-transfer torque parameter $β$ in ballistic Ni domain walls (DWs). For short DWs, the nonadiabatic reflection of conduction electrons caused by the rapid spatial variation of the exchange potential results in an out-of-plane torque that increases rapidly with decreasing DW length. For long DWs, the Fermi level conduction channel anisotropy t…
DC current induced magnetization reversal and magnetization oscillation was observed in 500 nm large size Co90Fe10/Cu/Ni80Fe20 pillars. A perpendicular external field enhanced the coercive field separation between the reference layer (Co90Fe10) and free layer (Ni80Fe20) in the pseudo spin valve, allowing a large window of external magnetic field for exploring the free-layer reversal. The magnetization precession was manifested in terms of the multiple peaks on the differential resistance curves. Depending on the bias current and applied field, the regions of magnetic switching and magnetizatio…
The perpendicular shape anisotropy-spin transfer torque-magnetic random access memories (PSASTT-MRAMs) takes advantage of the nanopillar free-layer geometry for securing a good thermal stability factor from the shape anisotropy of the nanomagnet. Such a concept is particularly well-suited for small junctions down to a few nanometers. At such a volume size, the nanopillar can be effectively modeled as a Stoner-Wohlfarth (SW) particle, and the shape anisotropy scales with the spontaneous magnetization by ~ Ms^2. For almost all ferromagnets, Ms is a strong function of temperature, therefore, the …
We numerically compute current-induced spin-transfer torques for antiferromagnetic domain walls, based on a linear response theory in a tight-binding model. We find that, unlike for ferromagnetic domain wall motion, the contribution of adiabatic spin torque to antiferromagnetic domain wall motion is negligible, consistent with previous theories. As a result, the non-adiabatic spin-transfer torque is a main driving torque for antiferromagnetic domain wall motion. Moreover, the non-adiabatic spin-transfer torque for narrower antiferromagnetic domain walls increases more rapidly than that for fer…
