arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 1506.07583cond-mat.mtrl-sci
收藏

量子氧化物超晶格中的共振隧穿

Resonant tunneling in a quantum oxide superlattice

Woo Seok Choi, Sang A. Lee, Jeong Ho You, Suyoun Lee, Ho Nyung Lee

摘要:

共振隧穿是一种量子力学过程,由于其有趣的物理基础和高速电子学的独特应用,长期以来一直吸引着科学和技术的关注。然而,表现出共振隧穿的材料系统在很大程度上仅限于传统的半导体,部分原因是它们具有优异的结晶质量。在这里,我们表明,一个故意设计的过渡金属氧化物超晶格具有明显的负微分电阻的共振隧穿行为。隧道发生通过原子级薄,镧δ-掺杂SrTiO 3层,和负微分电阻上实现的双极电阻开关通常观察到的钙钛矿氧化物结的顶部。这种结合过程导致高电阻状态和低电阻状态之间的电阻比非常大(~10^5)。在原子级薄的δ掺杂氧化物超晶格中发现的前所未有的大控制可以为新型氧化物基高频逻辑器件打开大门。

英文摘要:

Resonant tunnelling is a quantum mechanical process that has long been attracting both scientific and technological attention owing to its intriguing underlying physics and unique applications for high-speed electronics. The materials system exhibiting resonant tunnelling, however, has been largely limited to the conventional semiconductors, partially due to their excellent crystalline quality. Here we show that a deliberately designed transition metal oxide superlattice exhibits a resonant tunnelling behaviour with a clear negative differential resistance. The tunnelling occurred through an atomically thin, lanthanum δ-doped SrTiO3 layer, and the negative differential resistance was realized on top of the bipolar resistance switching typically observed for perovskite oxide junctions. This combined process resulted in an extremely large resistance ratio (~10^5) between the high and low-resistance states. The unprecedentedly large control found in atomically thin δ-doped oxide superlattices can open a door to novel oxide-based high-frequency logic devices.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑