We investigate hot carrier propagation across graphene using an electrical nonlocal injection/detection method. The device consists of a monolayer graphene flake contacted by multiple metal leads. Using two remote leads for electrical heating, we generate a carrier temperature gradient that results in a measurable thermoelectric voltage VNL across the remaining (detector) leads. Due to the nonlocal character of the measurement, VNL is exclusively due to the Seebeck effect. Remarkably, a departure from the ordinary relationship between Joule power P and VNL, VNL ~ P, becomes readily apparent at low temperatures, representing a fingerprint of hot-carrier dominated thermoelectricity. By studying VNL as a function of bias, we directly determine the carrier temperature and the characteristic cooling length for hot-carrier propagation, which are key parameters for a variety of new applications that rely on hot-carrier transport.
We examine how the photo-induced carriers contribute the thermoelectric transport, i.e. the nature of the photo-Seebeck effect, in the wide-gap oxide semiconductor ZnO for the first time. We measure the electrical conductivity and the Seebeck coefficient with illuminating light. The light illumination considerably changes the Seebeck coefficient as well as the conductivity, which is sensitive to the photon energy of the illuminated light. By using a simple parallel-circuit model, we evaluate the contributions of the photo-induced carriers to the conductivity and the Seebeck coefficient, whose …
We develop a low-temperature, long-wavelength theory for the interfacial spin Seebeck effect (SSE) in easy-axis antiferromagnets. The field-induced spin-flop (SF) transition of Néel order is associated with a qualitative change in SSE behavior: Below SF, there are two spin carriers with opposite magnetic moments, with the carriers polarized along the field forming a majority magnon band. Above SF, the low-energy, ferromagnetic-like mode has magnetic moment opposite the field. This results in a sign change of the SSE across SF, which agrees with recent measurements on Cr$_2$O$_3$/Pt and Cr$_2$O…
We have fabricated bilayer-graphene double layers separated by a thin ($\sim$20 nm) boron nitride layer and performed Coulomb drag and counterflow thermoelectric transport measurements. The measured Coulomb drag resistivity is nearly three orders smaller in magnitude than the intralayer resistivities. The counterflow Seebeck coefficient is found to be well approximated by the difference between Seebeck coefficients of individual layers and exhibit a peak in the regime where two layers have opposite sign of charge carriers. The measured maximum counterflow power factor is $\sim$ 700 $μ$W/K$^2$c…
We investigate the spin-dependent thermoelectric effects in magnetic graphene in both diffusive and ballistic regimes. Employing the Boltzmann and Landauer formalisms we calculate the spin and charge Seebeck coefficients (thermopower) in magnetic graphene varying the spin splitting, temperature, and doping of the junction. It is found that while in normal graphene the temperature gradient drive a charge current, in the case of magnetic graphene a significant spin current is also established. In particular we show that in the undoped magnetic graphene in which different spin carriers belong to …
Bismuth telluride is a low energy bulk band-gap topological system with conducting surface states. Besides its very good thermoelectric properties, it also makes a very good candidate for broadband photodetectors. Here, we report temperature-dependent photo-Seebeck effect in a bulk single crystalline bismuth telluride. On light illumination, an electrically biased sample shows distinguishable contributions in the measured current due to both the Seebeck effect and the normal photo-generated carriers within a narrow layer of the sample. Detailed experiments are performed to elucidate the distin…
We discuss the Seebeck coefficient and the Hall mobility of electrons confined in narrow SrTiO3 quantum wells as a function of the three-dimensional carrier density and temperature. The quantum wells contain a fixed sheet carrier density of ~ 7x10^14 cm^-2 and their thickness is varied. At high temperatures, both properties exhibit apparent Fermi liquid behavior. In particular, the Seebeck coefficient increases nearly linearly with temperature (T) when phonon drag contributions are minimized, while the mobility decreases proportional to T^2. Furthermore, the Seebeck coefficient scales inversel…
The abilities to inject and detect spin carriers are fundamental for research on transport and manipulation of spin information. Pure electronic spin currents have been recently studied in nanoscale electronic devices using a non-local lateral geometry, both in metallic systems and in semiconductors. To unlock the full potential of spintronics we must understand the interactions of spin with other degrees of freedom, going beyond the prototypical electrical spin injection and detection using magnetic contacts. Such interactions have been explored recently, for example, by using spin Hall or sp…
The dielectric environment of thin semiconductor nanowires can affect the charge transport properties inside the wire. In this work, it is shown that Coulomb impurity scattering inside thin nanowires can be damped strongly by coating the wire with a high-k dielectric. This will lead to an increase in the mobility of free charges inside the wire.
We investigate the energy relaxation of hot carriers produced by photoexcitation of graphene through coupling to both intrinsic and remote (substrate) surface polar phonons using the Boltzmann equation approach. We find that the energy relaxation of hot photocarriers in graphene on commonly used polar substrates, under most conditions, is dominated by remote surface polar phonons. We also calculate key characteristics of the energy relaxation process, such as the transient cooling time and steady state carrier temperatures and photocarriers densities, which determine the thermoelectric and pho…
The spin-Seebeck effect refers to voltage signals induced in metals by thermally driven spin currents in adjacent magnetic systems. We present a theory of the spin-Seebeck signal in the case where the conductor that supports the voltage signal is the topologically protected two-dimensional surface-state system at the interface between a ferromagnetic insulator (FI) and a topological insulator (TI). Our theory uses a Dirac model for the TI surface-states and assumes Heisenberg exchange coupling between the TI quasiparticles and the FI magnetization. The spin-Seebeck voltage is induced by the TI…
We find that the empirical relation between the longitudinal and Hall resistivities (i.e. Rxx and Rxy) and its counterpart between the Seebeck and Nernst coefficients (i.e. Sxx and Sxy), both originally discovered in two-dimensional electron gases, hold remarkably well for graphene in the quantum transport regime except near the Dirac point. The validity of the relations is cross-examined by independently varying the magnetic field and the carrier density in graphene. We demonstrate that the pre-factor, α_s, does not depend on carrier density in graphene. By tuning the carrier mobility therefo…
The Seebeck effect describes the generation of an electric potential in a conducting solid exposed to a temperature gradient. Besides fundamental relevance in solid state physics, it serves as a key quantity to determine the performance of functional thermoelectric materials. In most cases, it is dominated by an energy-dependent electronic density of states at the Fermi level, in line with the prevalent efforts toward superior thermoelectrics through the engineering of electronic structure. Here, we demonstrate an alternative source for the Seebeck effect based on charge-carrier relaxation: A …
Electronic structure of bismuth telluride nanowires with the growth directions [110] and [015] is studied in the framework of anisotropic effective mass method using the parabolic band approximation. The components of the electron and hole effective mass tensor for six valleys are calculated for both growth directions. For a square nanowire, in the temperature range from 77 K to 500 K, the dependence of the Seebeck coefficient, the electron thermal and electrical conductivity as well as the figure of merit ZT on the nanowire thickness and on the excess hole concentration are investigated in th…
Using the sensitivity of magneto-induced second harmonic generation to spin currents (SC), we demonstrate in Fe/Au/Fe/MgO(001) pseudo spin valves the generation of 250 fs-long SC pulses. Their temporal profile indicates that superdiffusive hot electron transport across a sub-100~nm Au layer is close to the ballistic limit and the pulse duration is primarily determined by the thermalization time of laser-excited hot carriers in Fe. Considering the calculated spin-dependent Fe/Au interface transmittance we conclude that a non-thermal spin-dependent Seebeck effect is responsible for the generatio…
The addition of porosity to thermoelectric materials can significantly increase the figure of merit, ZT, by reducing the thermal conductivity. Unfortunately, porosity is also detrimental to the thermoelectric power factor in the numerator of the figure of merit ZT. In this manuscript we derive strategies to recoup electrical performance in nanoporous Si by fine tuning the carrier concentration and through judicious design of the pore size and shape so as to provide energy selective electron filtering. In this study, we considered phosphorus doped silicon containing discrete pores that are eith…
Heat transfer across interfaces of graphene and polar dielectrics (e.g. SiO2) could be mediated by direct phonon coupling, as well as electronic coupling with remote interfacial phonons (RIPs). To understand the relative contribution of each component, we develop a new pump-probe technique, called voltage-modulated thermoreflectance (VMTR), to accurately measure the change of interfacial thermal conductance under an electrostatic field. We employed VMTR on top gates of graphene field-effect transistors and find that the thermal conductance of SiO2/graphene/SiO2 interfaces increases by up to ΔG…
The observation of metallic behavior at the interface between insulating oxides has triggered worldwide efforts to shed light on the physics of these systems and clarify some still open issues, among which the dimensional character of the conducting system. In order to address this issue, we measure electrical transport (Seebeck effect, Hall effect and conductivity) in LaAlO_{3}/SrTiO_{3} interfaces and, for comparison, in a doped SrTiO_{3} bulk single crystal. In these experiments, the carrier concentration is tuned, using the field effect in a back gate geometry. The combined analysis of all…
We examine the influence of remote bands on the tendency toward exciton condensation in a system consisting of two parallel graphene layers with negligible interlayer tunneling. We find that the remote bands can play a crucial supporting role, especially at low carrier densities, and comment on some challenges that arise in attempting quantitative estimates of condensation temperatures.
Understanding the transfer of spin angular momentum is essential in modern magnetism research. A model case is the generation of magnons in magnetic insulators by heating an adjacent metal film. Here, we reveal the initial steps of this spin Seebeck effect with <27fs time resolution using terahertz spectroscopy on bilayers of ferrimagnetic yttrium-iron garnet and platinum. Upon exciting the metal with an infrared laser pulse, a spin Seebeck current $j_\textrm{s}$ arises on the same ~100fs time scale on which the metal electrons thermalize. This observation highlights that efficient spin transf…
Fano and hybrid resonances of bilayer graphene could be attractive for thermoelectric devices. The special profile presented by such resonances could significantly enhance the Seebeck coefficient and the power factor. In this work, we study the thermoelectric properties of bilayer graphene single and double barrier structures. The charge carriers are described as massive chiral particles through an effective Dirac-like Hamiltonian. The Hybrid matrix method, the Landauer-Büttiker formalism and the Cutler-Mott formula are implemented to obtain the transmission, transport and thermoelectric prope…
Dielectric control of ultrafast carrier dynamics and transport in graphene
Max Planck Institute for Polymer Research（马克斯·普朗克聚合物研究所）；Debye Institute for Nanomaterials Science, Utrecht University（乌得勒支大学德拜纳米科学研究所）；Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST（加泰罗尼亚纳米科学与纳米技术研究所（ICN2，西班牙高等科学研究委员会和巴塞罗那独立科学与技术基金会））；School of Physics and Astronomy, University of Manchester（曼彻斯特大学物理与天文学学院）；Department of Applied Physics, TU Eindhoven（埃因霍温理工大学应用物理系）
Lightly doped III-V semiconductor InAs is a dilute metal, which can be pushed beyond its extreme quantum limit upon the application of a modest magnetic field. In this regime, a Mott-Anderson metal-insulator transition, triggered by the magnetic field, leads to a depletion of carrier concentration by more than one order of magnitude. Here, we show that this transition is accompanied by a two-hundred-fold enhancement of the Seebeck coefficient which becomes as large as 11.3mV.K$^{-1}\approx 130\frac{k_B}{e}$ at T=8K and B=29T. We find that the magnitude of this signal depends on sample dimensio…
Detecting the carrier scattering mechanisms in a materials system is important for transport related science and engineering. The approaches of fast laser process and electrical conductivity matching were used in previous literature, which do not give accurate information on scattering relaxation time as a function of carrier energy for intrinsic photon-free transport. Graphene is considered as a model system in materials science studying for its simple atomic and electronic structures. Here we have developed a new methodology to detect the scattering relaxation time as a function of carrier e…
To clarify the origin of the nontrivial thermoelectric properties observed in the delafossite oxide CuRhO$_2$ polycrystals, we have performed the systematic transport measurements on the single-crystalline CuRhO$_2$ samples. In the parent compound, we find a pronounced peak structure due to a phonon-drag effect in the temperature dependence of the Seebeck coefficient, which is also confirmed by the size effect experiments. In the Mg-substituted crystals, in contrast to the results of the polycrystals, both the resistivity and the Seebeck coefficient decrease with increasing Mg content $y$. In …
The room temperature carrier mobility in atomically thin 2D materials is usually far below the intrinsic limit imposed by phonon scattering as a result of scattering by remote charged impurities in its environment. We simulate the charged impurity-limited carrier mobility $μ$ in bare and encapsulated monolayer phosphorene. We find a significant temperature dependence in the carrier mobilities ($μ\propto T^{-γ}$) that results from the temperature variability of the charge screening and varies with the crystal orientation. The anisotropy in the effective mass leads to an anisotropic carrier mobi…
Electronic transport in BN-encasulated graphene limited by remote phonon scattering
Laboratoire Charles Coulomb (L2C), UMR 5221 CNRS-Université de Montpellier（蒙彼利埃大学查尔斯·库隆实验室）；Aix Marseille Univ, CNRS, CINaM, AMUTech（艾克斯马赛大学）；University of Modena and Reggio Emilia（摩德纳和雷焦艾米利亚大学）；Sapienza Università di Roma（罗马第一大学）
In recent years, new spin-dependent thermal effects have been discovered in ferromagnets, stimulating a growing interest in spin caloritronics, a field that exploits the interaction between spin and heat currents. Amongst the most intriguing phenomena is the spin Seebeck effect, in which a thermal gradient gives rise to spin currents that are detected through the inverse spin Hall effect. Non-magnetic materials such as graphene are also relevant for spin caloritronics, thanks to efficient spin transport, energy-dependent carrier mobility and unique density of states. Here, we propose and demon…
The thermalization of non-equilibrium charge carriers is at the heart of thermoelectric energy conversion. In nanoscale systems, the equilibration length can be on the order of the system size, leading to a situation where thermoelectric effects need to be considered as spatially distributed, rather than localized at junctions. The energy exchange between charge carriers and phonons is of fundamental scientific and technological interest, but their assessment poses significant experimental challenges. We addressed these challenges by imaging the temperature change induced by Peltier effects in…
We demonstrate the atomic layer deposition of high-quality HfO2 film on graphene and report the magnitude of remote oxide phonon (ROP) scattering in dual-oxide graphene transistors. Top gates with 30 nm HfO2 oxide layer exhibit excellent doping capacity of greater than 1.5x10^(13)/cm^(2). The carrier mobility in HfO2-covered graphene reaches 20,000 cm^(2)/Vs at low temperature, which is the highest among oxide-covered graphene and compares to that of pristine samples. The temperature-dependent resistivity exhibits the effect of ROP scattering from both the SiO2 substrate and the HfO2 over-laye…
We provide the first observation of weak localization in high carrier density two-dimensional electron gas in AlInN/GaN heterostructures; at low temperatures and low fields the conductivity increases with increasing magnetic field. Weak localization is further confirmed by the lnT dependence of the zero-field conductivity and angle dependence of magnetoresistance. The inelastic scattering rate is linearly proportional to temperature, demonstrating that electron-electron scattering is the principal phase breaking mechanism. Shubnikov-de Haas (SdH) oscillations at high magnetic fields are also o…
Charge carrier scattering is critical to the electrical properties of two-dimensional materials such as graphene, transition metal dichalcogenide monolayers, black phosphorene, and tellurene. Beyond pristine two-dimensional materials, further tailored properties can be achieved by nanoporous patterns such as nano- or atomic-scale pores (antidots) across the material. As one example, structure-dependent electrical/optical properties for graphene antidot lattices (GALs) have been studied in recent years. However, detailed charge carrier scattering mechanism is still not fully understood, which h…
The effect of electron-phonon scattering processes over the thermoelectric properties of extrinsic graphene was studied. Electrical and thermal resistivity, as well as the thermopower, were calculated within the Bloch theory approximations. Analytical expressions for the different transport coefficients were obtained from a variational solution of the Boltzmann equation. The phonon-limited electrical resistivity ρ_{e-ph} shows a linear dependence at high temperatures, and follows ρ_{e-ph} \sim T^{4} at low temperatures, in agreement with experiments and theory previously reported in the litera…
It is well known that the efficiency of a good thermoelectric material should be optimized with respect to doping concentration. However, much less attention has been paid to the optimization of the dopant's energy level. Thermoelectric materials doped with shallow levels may experience a dramatic reduction in their figures of merit at high temperatures due to the excitation of minority carriers that reduces the Seebeck coefficient and increases bipolar heat conduction. Doping with deep level impurities can delay the excitation of minority carriers as it requires a higher temperature to ionize…
