用现场小角度剖切法减小接触孔的深宽比
Reducing the Aspect Ratio of Contact Holes by In-Situ Low-Angle Cross Sectioning
摘要：
集成微电子器件高深宽比接触孔的俄歇分析是一项具有挑战性的分析任务。由于几何遮蔽，初级电子束和能量分析器不具有同时到分析区域的所需的直接视线。为了解决这个问题，需要进行样品制备以使三维几何形状变平。在这里，新的方法，在原位低角度横截面应用。通过这种方法，材料在俄歇仪器内被去除，同时利用部分覆盖样品的掩模的边缘以接近掠入射的方式通过Ar+离子溅射样品。相对于样品表面产生非常浅的斜面。因此，沿斜面接触孔具有合适的纵横比可用于俄歇分析。
英文摘要：
Auger analysis of high-aspect ratio contact holes of integrated microelectronic devices is a challenging analytical task. Due to geometrical shadowing the primary electron beam and the energy analyser have not the required direct line of sight to the analysis area simultaneously. To solve this problem sample preparation is needed to flatten the 3-dimensional geometry. Here the new approach of in-situ low-angle cross sectioning is applied. By this method material gets removed inside the Auger instrument while the sample is sputtered by Ar+ ions at nearly grazing incidence utilizing the edge of a mask, which partly covers the sample. A very shallow bevel with respect to the sample surface is produced. Thus along the bevel contact holes with suitable aspect ratios are available for the Auger analysis.
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