原位小角度剖面：由于自对准效应导致的斜面展平
In-Situ Low-Angle Cross Sectioning: Bevel Slope Flattening due to Self-Alignment Effects
摘要：
低角度截面内产生的俄歇微探针使用配备的深度剖面离子溅射枪。简单地说，样品部分被掩模覆盖。利用该掩模的边缘，用离子溅射样品。由于掩模的阴影，在样品中产生截面。该截面的斜率比几何设置给出的斜率小得多。这是由于自对准效应，这是由于在溅射和遮蔽样品区域之间的过渡区域中缺少溅射级联以及掩模边缘的倒角。这些自对准效应研究在这里使用104.6 nm厚的SiO2层热生长在Si衬底上。在这项研究中，一方面，对于作为溅射时间的函数的15.8°的固定离子撞击角，产生了几个原位小角度截面。通过这种方式，实现了0.014°和0.085°的最终低倾斜角之间的倾斜角。另一方面，对于固定的溅射时间，离子撞击角在14.8°和70.8°之间变化。对于这些样品，观察到截面的倾斜角在0.031°和0.32°之间。这些结果表明，在现场横断面的明显的斜坡平坦化。
英文摘要：
Low-angle cross sections are produced inside an Auger microprobe using the equipped depth profile ion sputter gun. Simply the sample is partly covered by a mask. Utilizing the edge of this mask the sample is sputtered with ions. Due to the shading of the mask a cross section is produced in the sample. The slope of this cross section is considerably shallower than given by the geometrical setup. This is attributed to self-alignment effects, which are due to missing sputter cascades in the transition area between sputtered and shaded sample regions and a chamfering of the mask edge. These self-alignment effects are studied here using a 104.6 nm thick SiO2 layer thermally grown on a Si substrate. In this study on one hand for a fixed ion impact angle of 15.8° as function of the sputter time several in-situ low-angle cross sections were produced. This way slope angles between an ultimate low slope angle of 0.014° and 0.085° were achieved. On the other hand for a fixed sputter time the ion impact angle was varied between 14.8°and 70.8°. For these samples cross section slope angles between 0.031°and 0.32°are observed. These results demonstrate the distinct slope flatting of in-situ cross sectioning.
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