We investigated CeNi9In2 compound, which has been considered as a mixed valence (MV) system. Electrical resistivity vs. temperature variation was analysed in terms of the model proposed by Freimuth for systems with unstable 4f shell. At low temperature the resistivity dependence is consistent with a Fermi liquid state with a contribution characteristic of electron-phonon interaction. Ultraviolet photoemission spectroscopy (UPS) studies of the valence band did not reveal a Kondo peak down to 14 K. A difference of the spectra obtained with photon energies of low and high photoionization cross sections for Ce 4f electrons indicated that 4f states are located mainly close to the Fermi energy. The peaks related to f_{5/2}^1 and f_{7/2}^1 final states cannot be resolved but form a plateau between -0.3 eV and the Fermi energy. X-ray photoemission spectroscopy (XPS) studies were realized for the cerium 3d level. The analysis of XPS spectra within the Gunnarsson-Shönhammer theory yielded a hybridization parameter of 104 meV and non-integer f level occupation, being close to 3. Calculations of partial densities of states were realized by a full potential local orbital (FPLO) method. They confirm that the valence band is dominated by Ni 3d states and are in general agreement with the experiment except for the behavior of f-electrons.
Effects of Fe substitution on the electronic, transport, and magnetic properties of ZnGa$_2$O$_4$: A systematic ab-initio study
采用密度泛函方法研究了Fe掺杂到宽禁带尖晶石ZnGa $_2$ O $_4$的四面体和八面体阳离子位的结构.我们计算了不同的取代的电子结构，并讨论了考虑不同近似的交换相关势的每种情况下的磁性和输运性质。我们表明，对于某些掺杂的情况下，获得的预测行为的显着差异取决于所采用的交换相关电位。概述了掺杂系统作为磁性半导体的可能应用。
Metallic ground state and glassy transport in single crystalline URh$_2$Ge$_2$: Enhancement of disorder effects in a strongly correlated electron system
本文详细研究了中等无序重费米子系统URh $_2$ Ge $_2$的电子输运性质。对于这种材料，我们发现在一个单一的晶体化合物的玻璃态电子输运。我们推导出的电导率的温度依赖性，并建立通过光学电导率和霍尔效应测量的金属性。电子输运性质的整体行为非常类似于金属玻璃，在低温下额外的轻微自旋无序的贡献。我们认为，这种玻璃态的电子行为在晶体化合物中反映了增强的无序效应的结果，强的电子相关。
