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arXiv 1503.07893cond-mat.mtrl-sci
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用高TC铁磁绝缘体增强Cr掺杂Bi2Se3的磁有序

Enhancing Magnetic Ordering in Cr-doped Bi2Se3 using High-TC Ferrimagnetic Insulator

Wenqing Liu, Liang He, Yongbing Xu, Koichi Murata, Mehmet C. Onbasli, Murong Lang, Nick J. Maltby, Shunpu Li, Xuefeng Wang, Caroline A. Ross, Peter Bencok, Gerr… 展开作者

Wenqing Liu, Liang He, Yongbing Xu, Koichi Murata, Mehmet C. Onbasli, Murong Lang, Nick J. Maltby, Shunpu Li, Xuefeng Wang, Caroline A. Ross, Peter Bencok, Gerrit van der Laan, Rong Zhang, Kang. L. Wang

摘要:

我们报道了一个模型的磁掺杂拓扑绝缘体(TI),Bi 2-xCrxSe 3,通过邻近效应使用高TC亚铁磁绝缘体Y3 Fe 5 O 12的研究。FMI为TI提供了一个交换相互作用的源,但没有去除非平凡的表面态。通过进行元素特定的X射线磁圆二色性(XMCD)测量,我们已经明确地观察到增强TC的50 K,在这种磁掺杂TI/FMI异质结。我们还发现,与稀释铁磁半导体(DMS)相比,穿透深度更大(30 K时为6.6 nm)但下降速度更快(从30 K到50 K下降80%),这可能表明FMI之间相互作用的新机制和非平凡的TI表面。

英文摘要:

We report a study of enhancing the magnetic ordering in a model magnetically doped topological insulator (TI), Bi2-xCrxSe3, via the proximity effect using a high-TC ferrimagnetic insulator Y3Fe5O12. The FMI provides the TI with a source of exchange interaction yet without removing the nontrivial surface state. By performing the elemental specific X-ray magnetic circular dichroism (XMCD) measurements, we have unequivocally observed an enhanced TC of 50 K in this magnetically doped TI/FMI heterostructure. We have also found a larger (6.6 nm at 30 K) but faster decreasing (by 80% from 30 K to 50 K) penetration depth compared to that of diluted ferromagnetic semiconductors (DMSs), which could indicate a novel mechanism for the interaction between FMIs and the nontrivial TIs surface.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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