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arXiv 1502.05059cond-mat.str-elcond-mat.mtrl-sci
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[ Tl4 ] Tl1-xSnxTe3中的超导圆顶和向绝缘态的渡越

Superconducting Dome and Crossover to an Insulating State in [Tl4]Tl1-xSnxTe3

K. E. Arpino, B. D. Wasser, T. M. McQueen

摘要:

本文报道了[Tl_4] Tl_1-xSn_xTe_3的结构、超导和电子相图。磁化强度和比热测量表明,当0 < x < 0.4时,存在体超导电性.电阻率测量表明,从金属状态的低掺杂的掺杂绝缘体在x = 1的交叉。一般来说,有一个大的非德拜比热贡献,其特征是爱因斯坦温度θE ~ 35 K。密度泛函理论计算预测x = 0是拓扑金属,而x = 1是拓扑晶体绝缘体。超导性的消失与这些不同拓扑状态之间的转变有关。

英文摘要:

The structural, superconducting, and electronic phase diagram of [Tl4]Tl1-xSnxTe3 is reported. Magnetization and specific heat measurements show bulk superconductivity exists for 0 < x < 0.4. Resistivity measurements indicate a crossover from a metallic state for low dopings to a doped insulator at x = 1. Universally, there is a large non-Debye specific heat contribution, characterized by an Einstein temperature of θE ~ 35 K. Density functional theory calculations predict x = 0 to be a topological metal, while x = 1 is a topological crystalline insulator. The disappearance of superconductivity correlates with the transition between these distinct topological states.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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