电流的分形约束与磁性自破坏：二维δ层中金属-绝缘体转变附近的电子
Fractal Confinement and Magnetic Self-sabotage of Current Flow: Electrons Near the Metal-insulator Crossover in a 2D $δ$-layer
浏览论文内容
中文总结 AI 辅助
该研究通过大规模Hartree-Fock计算，揭示二维δ掺杂半导体金属-绝缘体转变附近的两种输运 regime，发现分形波函数与动态SU(2)对称性破缺对电流的约束与自破坏机制。
中文摘要 AI 辅助
我们研究二维δ掺杂半导体中的低温输运与巡游磁性。采用随机跳跃和排斥作用U₀的大规模Hartree-Fock计算，揭示了临界密度附近的两种输运 regime：当温度T降至U₀/10以下时，电导率σ(T)初始上升；但当T≈U₀/100时，少量磁矩形成，引发绝缘性下降。分形波函数局部放大磁相互作用，初始将电流集中为分支细丝，最终通过动态SU(2)对称性破缺阻断电流。
英文摘要
We study low-$T$ transport and itinerant magnetism in 2D $δ$-doped semiconductors. Large-scale Hartree-Fock calculations with random hoppings and repulsion $U_0$ reveal two transport regimes near a critical density. The conductivity $σ(T)$ initially increases as $T$ drops below $U_0 / 10$. However, at $T \sim U_0/100$, a tiny density of magnetic moments forms, driving an insulating downturn. Fractal wavefunctions locally amplify magnetic interactions, initially concentrating currents into branched filaments, but ultimately choking them off via dynamic SU(2) symmetry breaking.
发表机构
- KTH Royal Institute of Technology（皇家理工学院）
- Rice University（莱斯大学）
- PSI Center for Scientific Computing, Theory and Data（瑞士保罗谢勒研究所科学计算、理论与数据中心）
机构由 AI 辅助整理，请以论文原文为准。
