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arXiv 1208.1102cond-mat.supr-concond-mat.str-el
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二维哈伯德模型中d波对态BCS超导体与掺杂莫特绝缘体的交叉

Crossover between BCS Superconductor and Doped Mott Insulator of d-wave Pairing State in Two-Dimensional Hubbard Model

Hisatoshi Yokoyama, Masao Ogata, Yukio Tanaka, Kenji Kobayashi, Hiroki Tsuchiura

摘要:

针对高温超导铜氧化物,采用变分Monte Carlo方法,研究了正方晶格上Hubbard(t-t '-U)模型的相关dx 2-y2波超导(SC)态和反铁磁(AF)态的性质.我们采用简单的试探波函数,其中只包括关键的参数,如一个必不可少的描述相关的SC和正常状态的掺杂莫特绝缘体的doublon-holon结合因子。系统地计算了有关量与U/t、t ′/t和δ(掺杂率)的关系。随着U/t的增加,对于任何t '/t,在U_co/t \sim 10处发生SC性质的急剧交叉,从常规BCS类型到动能驱动类型。随着δ的减小,Uco/t平滑地连接到半充满时的Mott转变点。对于U/\lsim 5,没有发现与铜酸盐对应的稳定超导性,而d波SC关联函数Pd^ \infty在U=U_co时迅速增大,并在U=U_co时达到最大值.比较Pd^ \infty的δ依赖性与实验观测到的圆顶形Tc和凝聚能,我们发现铜酸盐的$U$的有效值应大于带宽. t-J模型是有效的。从动能分析可知,当U>U_(co)时,只有掺杂空穴(电子)成为载流子,形成小的费米面(空穴袋);当U<U_(co)时,所有电子(空穴)都对导电有贡献,形成大的费米面,这与铜氧化物的特性相矛盾。通过引入适当的负(正)t '/t,SC(AF)状态被稳定。在欠掺杂状态下,U>U_co的SC强度由两个因素决定,即,AF自旋相关性,它创建单线对(赝能隙),和由莫特物理学主导的电荷迁移率。

英文摘要:

With high-Tc cuprates in mind, properties of correlated dx2-y2-wave superconducting (SC) and antiferromagnetic (AF) states are studied for the Hubbard (t-t'-U) model on square lattices, using a variational Monte Carlo method. We employ simple trial wave functions including only crucial parameters, such as a doublon-holon binding factor indispensable to describe correlated SC and normal states as doped Mott insulators. U/t, t'/t and δ(doping rate) dependence of relevant quantities are systematically calculated. As U/t increases, a sharp crossover of SC properties occurs at U_co/t \sim 10 from a conventional BCS type to a kinetic-energy-driven type for any t'/t. As δdecreases, U_co/t is smoothly connected to the Mott transition point at half filling. For U/t\lsim 5, steady superconductivity corresponding to the cuprates is not found, whereas the d-wave SC correlation function Pd^\infty rapidly increases for U/t\gsim 6 and becomes maximum at U=U_co. Comparing the δdependence of Pd^\infty with experimentally observed dome-shaped Tc and condensation energy, we find that the effective value of $U$ for the cuprates should be larger than the band width, for which the t-J model is valid. Analyzing the kinetic energy, we reveal that for U>U_co only doped holes (electrons) become charge carriers, which will make a small Fermi surface (hole pocket), but for U<U_co all the electrons (holes) contribute to conduction and will make an ordinary large Fermi surface, which is contradictory to the feature of cuprates. By introducing a proper negative (positive) t'/t, the SC (AF) state is stabilized. In the underdoped regime, the strength of SC for U>U_co is determined by two factors, i.e., the AF spin correlation, which creates singlet pairs (pseudogap), and the charge mobility dominated by Mott physics.

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