横向漂移场皮秒UV单光子探测器：概念与技术
Picosecond UV Single Photon Detectors with Lateral Drift Field: Concept and Technologies
摘要：
III-V族半导体材料在相当长的一段时间内被认为是高级逻辑器件的Si替代品。III-V族加工技术的进步，如界面和表面钝化，主要由MOSFET开发驱动的具有高深宽比蚀刻的大面积深亚微米光刻，也可以用于其他应用。在本文中，我们将集中在与表面平行的漂移场的光电探测器。我们比较所提出的概念，以国家的最先进的硅为基础的技术和讨论的要求，需要满足这样的探测器被用于在一个单一的光子计数模式在蓝色和紫外光谱区域与约10 ps的光子定时分辨率至关重要的众多应用，从高能物理医学成像。
英文摘要：
Group III-V semiconductor materials are being considered as a Si replacement for advanced logic devices for quite some time. Advances in III-V processing technologies, such as interface and surface passivation, large area deep submicron lithography with high-aspect ratio etching primarily driven by the MOSFET development can also be used for other applications. In this paper we will focus on photodetectors with the drift field parallel to the surface. We compare the proposed concept to the state-of-the-art Si-based technology and discuss requirements which need to be satisfied for such detectors to be used in a single photon counting mode in blue and ultraviolet spectral region with about 10 ps photon timing resolution essential for numerous applications ranging from high-energy physics to medical imaging.
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