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arXiv 1409.3753cond-mat.mes-hall
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Ta/\Co 20 Fe 60 B 20 \MgO纳米线中的界面Dzyaloshinskii-Moriya相互作用

Interfacial Dzyaloshinskii-Moriya interaction in Ta\Co20Fe60B20\MgO nanowires

R. Lo Conte, E. Martinez, A. Hrabec, A. Lamperti, T. Schulz, L. Nasi, L. Lazzarini, F. Maccherozzi, S. S. Dhesi, B. Ocker, C. H. Marrows, T. A. Moore, M. Klaeui

摘要:

本文报道了Ta \Co 20 Fe 60 B 20 \MgO纳米线中的电流诱导畴壁运动(CIDWM)。当没有磁场施加时,畴壁被观察到逆着电子流移动,而沿着纳米线的场强烈地影响畴壁的运动方向和速度。观察到的对称效应为上下和上下畴壁。这表明存在右手畴壁,这是由于Dzyaloshinskiii-Moriya相互作用(Dzyaloshinskii-Moriya相互作用),Dzyaloshinski-Moriya相互作用系数D=+0.06 mJ/m2。正的极化系数被解释为退火过程中硼扩散到钽缓冲层的结果。在Pt \Co 68 Fe 22 B10 \MgO纳米线中,观察到沿着电子流的CIDWM,证实了这种解释。实验结果进行了比较,包括钉扎效应的一维模型模拟。这种先进的建模使我们能够重现实验结果,并可靠地提取纳米线中Ta的自旋霍尔角θSH=-0.11,显示了分析的重要性,超越了目前使用的完美纳米线模型。

英文摘要:

We report current-induced domain wall motion (CIDWM) in Ta\Co20Fe60B20\MgO nanowires. Domain walls are observed to move against the electron flow when no magnetic field is applied, while a field along the nanowires strongly affects the domain wall motion direction and velocity. A symmetric effect is observed for up-down and down-up domain walls. This indicates the presence of right-handed domain walls, due to a Dzyaloshinskii-Moriya interaction (DMI) with a DMI coefficient D=+0.06 mJ/m2. The positive DMI coefficient is interpreted to be a consequence of boron diffusion into the tantalum buffer layer during annealing. In a Pt\Co68Fe22B10\MgO nanowire CIDWM along the electron flow was observed, corroborating this interpretation. The experimental results are compared to 1D-model simulations including the effects of pinning. This advanced modelling allows us to reproduce the experiment outcomes and reliably extract a spin-Hall angle θSH=-0.11 for Ta in the nanowires, showing the importance of an analysis that goes beyond the currently used model for perfect nanowires.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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