arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 1408.7097cond-mat.str-elcond-mat.mes-hall
收藏

反铁磁La $_{0.4}$ Sr $_{0.6}$ MnO $_{3}$中应变驱动的各向异性磁电阻

Strain driven anisotropic magnetoresistance in antiferromagnetic La$_{0.4}$Sr$_{0.6}$MnO$_{3}$

A. T. Wong, C. Beekman, H. Guo, W. Siemons, Z. Gai, E. Arenholz, Y. Takamura, T. Z. Ward

摘要:

研究了应变对La $_{1-x}$ Sr $_{x}$ MnO $_{3}$(x = 0.6)反铁磁(AFM)单晶薄膜的影响。名义上未应变的样品具有强的磁电阻,各向异性磁电阻(AMR)高达8%。压缩应变抑制磁阻,但产生高达63%的AMR值。拉伸应变呈现了金属-绝缘体转变的唯一情况,并展示了先前未报道的AMR行为。在这三种情况下,我们发现磁有序的证据,没有全球铁磁相变的迹象。这些行为归因于外延引起的轨道占据的变化驱动不同的磁有序类型。我们的研究结果表明,不同的原子力显微镜订购类型有深刻的影响AMR的幅度和字符。

英文摘要:

We investigate the effects of strain on antiferromagntic (AFM) single crystal thin films of La$_{1-x}$Sr$_{x}$MnO$_{3}$ (x = 0.6). Nominally unstrained samples have strong magnetoresistance with anisotropic magnetoresistances (AMR) of up to 8%. Compressive strain suppresses magnetoresistance but generates AMR values of up to 63%. Tensile strain presents the only case of a metal-insulator transition and demonstrates a previously unreported AMR behavior. In all three cases, we find evidence of magnetic ordering and no indication of a global ferromagnetic phase transition. These behaviors are attributed to epitaxy induced changes in orbital occupation driving different magnetic ordering types. Our findings suggest that different AFM ordering types have a profound impact on the AMR magnitude and character.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑