用于大规模量子器件阵列的多路电荷锁定器件
Multiplexed Charge-locking Device for Large Arrays of Quantum Devices
摘要：
我们提出了一种形成和控制大阵列的门定义的量子器件的方法。该方法使用了一种新的，片上，多路复用的电荷锁定系统，并有助于克服在低温恒温器测量系统中可用的电线的数量所施加的限制。介绍了两种设备创新。首先，多路复用器设计，其利用分裂门以允许多路复用器在每个分支处划分三个或更多路。其次，我们描述了一种设备架构，利用多路复用器型的计划，以锁定到栅电极上的电荷。该设计允许访问和控制其总数超过可用电触点的栅极，并能够形成、调制和测量大型量子器件阵列。我们利用这些创新的n型GaAs/AlGaAs衬底上制造的设备，并调查锁定到栅极上的电荷的稳定性。通过测量由器件中的浮栅形成的单个量子点的库仑阻塞峰来示出概念验证。浮栅每小时漂移约一个库仑振荡。
英文摘要：
We present a method of forming and controlling large arrays of gate-defined quantum devices. The method uses a novel, on-chip, multiplexed charge-locking system and helps to overcome the restraints imposed by the number of wires available in cryostat measurement systems. Two device innovations are introduced. Firstly, a multiplexer design which utilises split gates to allow the multiplexer to divide three or more ways at each branch. Secondly we describe a device architecture that utilises a multiplexer-type scheme to lock charge onto gate electrodes. The design allows access to and control of gates whose total number exceeds that of the available electrical contacts and enables the formation, modulation and measurement of large arrays of quantum devices. We fabricate devices utilising these innovations on n-type GaAs/AlGaAs substrates and investigate the stability of the charge locked on to the gates. Proof-of-concept is shown by measurement of the Coulomb blockade peaks of a single quantum dot formed by a floating gate in the device. The floating gate is seen to drift by approximately one Coulomb oscillation per hour.
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