杂质原子辐射增强扩散的微观机制
Microscopic mechanism responsible for radiation-enhanced diffusion of impurity atoms
摘要：
对高能质子和低能质子辐照硅衬底时硼和磷原子的辐射增强扩散进行了模拟。所获得的结果证实了先前得出的结论，即杂质扩散是通过“杂质原子-本征点缺陷”对发生的，并且替代杂质原子、辐照产生的非平衡点缺陷和这些对之间的局部热力学平衡条件是有效的。它示出，使用辐射增强扩散，可以形成一个特殊的杂质分布在半导体衬底中，包括逆行的配置文件，随着杂质浓度增加到一个半导体的体。进行的计算给出了明确的证据，有利于进一步研究各种掺杂过程的基础上辐射增强扩散，特别是等离子体掺杂的过程，开发一种廉价的方法，在近表面区域形成特定的杂质分布。
英文摘要：
Modeling of radiation-enhanced diffusion of boron and phosphorus atoms during irradiation of silicon substrates respectively with high- and low-energy protons was carried out. The results obtained confirm the previously arrived conclusion that impurity diffusion occurs by means of the "impurity atom - intrinsic point defect" pairs and that the condition of the local thermodynamic equilibrium between substitutional impurity atoms, nonequilibrium point defects created by irradiation, and the pairs is valid. It is shown that using radiation-enhanced diffusion, one can form a special impurity distribution in the semiconductor substrate including retrograde profiles with increasing impurity concentration into the bulk of a semiconductor. The calculations performed give clear evidence in favor of further investigation of various doping processes based on radiation-enhanced diffusion, especially the processes of plasma doping, to develop a cheap method for formation of specific impurity distributions in the near surface region.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
