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arXiv 1407.2202cond-mat.mes-hallcond-mat.mtrl-sci
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单层MoS2粗糙度和与原子级平坦基底相互作用的滑动摩擦淬火

Single-layer MoS2 roughness and sliding friction quenching by interaction with atomically flat substrates

Jorge Quereda, Andres Castellanos-Gomez, Nicolás Agraït, Gabino Rubio-Bollinger

摘要:

实验研究了沉积在SiO2、云母和六方氮化硼(h-BN)衬底上的单层MoS 2晶体的表面粗糙度和横向摩擦力。粗糙度和滑动摩擦测量通过原子力显微镜(AFM)进行。我们发现一个很强的依赖性的MoS 2粗糙度的底层衬底材料,是h-BN的衬底,更好地保持了平整度的MoS 2晶体。横向摩擦力也随着粗糙度的降低而降低,并且对于h-BN衬底上的MoS 2薄片达到其最低值。然而,它仍然高于块状MoS 2晶体的表面,我们将其归因于由于竞争的尖端与薄片和薄片与衬底的相互作用而导致的薄片的变形。

英文摘要:

We experimentally study the surface roughness and the lateral friction force in single-layer MoS2 crystals deposited on different substrates: SiO2, mica and hexagonal boron nitride (h-BN). Roughness and sliding friction measurements are performed by atomic force microscopy (AFM). We find a strong dependence of the MoS2 roughness on the underlying substrate material, being h-BN the substrate which better preserves the flatness of the MoS2 crystal. The lateral friction also lowers as the roughness decreases, and attains its lowest value for MoS2 flakes on h-BN substrates. However, it is still higher than for the surface of a bulk MoS2 crystal, which we attribute to the deformation of the flake due to competing tip-to-flake and flake-to-substrate interactions.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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