The kinetic theory of switching processes in crystalline ferroelectric materials under the influence of a variable external electric field is formulated. The basic equations are derived and their exact analytical solution at arbitrary time-dependent external field are obtained. Connection between the hysteresis loops shape and variable external electric field parameters is investigated numerically. The numerical results were found to be in excellent agreement with the experiments. PACS: 77.80.Fm, 77.80.Dj, 77.80.-e Keywords: ferroelectrics, switching processes, hysteresis curves, polarization
In published papers, the Gibbs free energy of ferroelectric materials has usually been quantified by the retention of 6th or 8th order polarization terms. In this paper, a newly analytical model of Gibbs free energy, thereout, a new model of polarization-electric field hysteresis loops in ferroelectric materials has been derived mathematically. As a model validation, four patterns of polarization-electric field hysteresis loops of ferroelectric materials have been depicted by using the model. The calculated results indicated that the self-similar model can characterize the various patterns of …
In order to understand the physical hysteresis loops clearly, we constructed a novel model, which is combined with the electric field, the temperature, and the stress as one synthetically parameter. This model revealed the shape of hysteresis loop was determined by few variables in ferroelectric materials: the saturation of polarization, the coercive field, the electric susceptibility and the equivalent field. Comparison with experimental results revealed the model can retrace polarization versus electric field and temperature. As a applications of this model, the calculate formula of energy s…
For the first time in a bulk proper uniaxial ferroelectrics, double antiferroelectric-like hysteresis loops have been observed in the case of Sn$_2$P$_2$S$_6$ crystal. The quantum anharmonic oscillator model was proposed for description of such polarization switching process. This phenomenon is related to three-well local potential of spontaneous polarization fluctuations at peculiar negative ratio of coupling constants which correspond to inter-site interaction in given sublattice and interaction between two sublattices of Sn$_2$P$_2$S$_6$ modeled crystal structure. Obtained data can be used …
Moire materials, created by lattice-mismatch or/and twist-angle, have spurred great interest in excavating novel quantum phases of matter. Latterly, emergent interfacial ferroelectricity has been surprisingly found in spatial inversion symmetry broken systems, such as rhombohedral-stacked bilayer transition metal dichalcogenides (TMDs). However, the evolution of moire superlattices corresponding to polarization switching and hysteresis is still unclear, which is crucial for giving insight into the interplay between lattice symmetry and band topology, as well as developing optoelectronic memory…
Ferroelectric materials are characterized by degenerate ground states with multiple polarization directions. In a ferroelectric capacitor this should manifest as equally favourable up and down polarization states. However, this ideal behavior is rarely observed in ferroelectric thin films and superlattice devices, which generally exhibit a built-in bias which favors one polarization state over the other. Often this polarization asymmetry can be attributed to the electrodes. In this study we examine bias in PbTiO$_3$-based ferroelectric superlattices that is not due to the electrodes, but rathe…
We present a theoretical proposal for the design of a thermal switch based on the anisotropy of the thermal conductivity of PbTiO3 and of the possibility to rotate the ferroelectric polarization with an external electric field. Our calculations are based on an iterative solution of the phonon Boltzmann Transport Equation and rely on interatomic force constants computed within an efficient second-principles density functional theory scheme. We also characterize the hysteresis cycle of the thermal conductivity in presence of an applied electric field and show that the response time would be limi…
Emergent functionalities of structural and topological defects in ferroelectric materials underpin an extremely broad spectrum of applications ranging from domain wall electronics to high dielectric and electromechanical responses. Many of these have been discovered and quantified via local scanning probe microscopy methods. However, the search for these functionalities has until now been based by either trial and error or using auxiliary information such as topography or domain wall structure to identify potential objects of interest based on the intuition of operator or preexisting hypothese…
Ferroelectric interfaces are unique model objects for fundamental studies of polar surface properties such as versatile screening mechanisms of spontaneous polarization by free carriers and possible ion exchange with ambient media. The effect of ionic adsorption by electrically-open (i.e. non-electroded) ferroelectric surface on polarization reversal in the ferroelectric had been investigated experimentally and theoretically, however the effect influence on the temperature behaviour of polarization hysteresis remains unexplored. Also the comparative theoretical analysis of the ferroelectric hy…
Piezoresponse force microscopy (PFM) has been extensively utilized as a versatile and an indispensable tool to understand and analyze nanoscale ferro- /piezoelectric properties by detecting the local electromechanical response on a sample surface. However, it has been discovered that the electromechanical response not only originates from piezoelectricity but also from other factors such as the electrostatic effect. In this study, we explore the dependence of off-field PFM hysteresis loops on the surface-potential-induced electrostatic effect in a prototypical ferroelectric thin film by applyi…
Detangling Extrinsic and Intrinsic Hysteresis for Detecting Dynamic Switch of Electric Dipoles using Graphene Field-Effect Transistors on Ferroelectric Gates
在Pb0.92La0.08Zr0.52Ti0.48 O3栅极GFET/PLZT上的石墨烯场效应晶体管上观察到源极-漏极电流对背栅电压ID-VBG特性从非本征极性分子主导滞后到由铁电薄膜固有的缺氧表面层诱导的反滞后的转变。在真空退火过程中开发的栅极，以系统地去除吸附在GFET沟道表面上的极性分子。这允许GFET/PLZT栅极器件上的非本征和本征磁滞的解缠，以及使用GFET的电偶极子的动态开关的检测，利用它们在铁电栅极上的高选通效率。电荷捕获和钉扎机制的模型，提出了成功地解释过渡。分别响应于正极性、负极性以及交替极性的脉冲VBG串，源极-漏极电流ID变化是瞬时的，其中响应幅度遵循由DC VBG测量的ID-VBG回路，考虑到当栅极电场超过PLZT的矫顽场时给定VBG脉冲之后的剩余极化。在室温下的检测灵敏度约为212偶极/μ m ~ 2，表明GFET/铁电栅器件为电偶极动态开关的非制冷检测提供了一种有前途的高灵敏度方案。
Space charge dynamics in solid electrolytes with steric effect and Vegard stresses: resistive switching and ferroelectric-like hysteresis of electromechanical response
Advances in predictive modeling across multiple disciplines have yielded generative models capable of high veracity in predicting macroscopic functional responses of materials. Correspondingly, of interest is the inverse problem of finding the model parameter that will yield desired macroscopic responses, such as stress-strain curves, ferroelectric hysteresis loops, etc. Here we suggest and implement a Gaussian Process based methods that allow to effectively sample the degenerate parameter space of a complex non-local model to output regions of parameter space which yield desired functionaliti…
Alpha Fe2O3 powders have been prepared by the reduction reaction method with NaHB4 as reducing agent and followed a conventional sintering process. The XRD pattern with Rietveld refinement profile reveal that the prepared Fe2O3 with corundum structure (hematite). VSM loop exhibits obvious room-temperature weak ferromagnetism, a pinched hysteresis loop may introduced by the shape anisotropy effect. The simultaneous ferroelectric behavior of α-Fe2O3 with "five-fold" ferroelectric hysteresis loops approves that this structured Fe2O3 can be known as a novel multiferroic material.
Doping is a widely used method to tune physical properties of ferroelectric perovskites. Since doping can induce charges due to the substitution of certain elements, charge effects shall be considered in doped samples. To understand how charges can affect the system, we incorporate the dipole-charge interaction into our simulations, where the pinched hysteresis loops can well be reproduced. Two charge compensation models are proposed and numerically investigated to understand how lanthanum doping affect BaTiO$_{3}$'s ferroelectric phase transition temperature and hysteresis loop. The consequen…
The ferroelectric hysteresis loops of sodium bismuth titanate Na0.5Bi4.5Ti4O15 bulk ceramics were measured under periodical electric field in range of frequency from 0.01Hz to 100Hz and field from 10kV/cm to 150kV/cm. The three-stage scaling behavior of dynamic hysteresis was investigated in Na0.5Bi4.5Ti4O15 bulk ceramics. The scaling behavior at low amplitude of electric field is described as <A> is proportional to f^(-0.122)E0^3.30 for low frequency and <A> is proportional to f^(-0.122)E0^3.15 for high frequency. <A>, f and E0 represent the area of hysteresis loop, frequency and amplitude of…
Ferroelectric hysteresis in singly aligned graphene-hBN moiré superlattices
CIC nanoGUNE（纳米科技联合研究中心）；University of the Basque Country (UPV/EHU)（巴斯克大学）；National Institute for Materials Science（物质材料研究机构）；Centro de Física de Materiales (CFM-MPC) Centro Mixto CSIC-UPV/EHU（物质物理中心（CFM-MPC）CSIC-巴斯克大学联合中心）
Domain Nucleation and Hysteresis Loop Shape in Piezoresponse Force Spectroscopy
压电响应力显微镜（Piezoresponse Force Microscopy）中的机电磁滞回线测量已经成为探测纳米尺度上的铁电开关行为的强大技术。PFS数据的解释需要建立域参数和PFM信号之间的关系。在这里，我们分析了开关过程中使用修改后的点电荷模型的电场的提示。选择电荷值和位置，使得其电场等势面以确定的曲率半径再现尖端。利用线性弹性理论，推导了半椭球畴大小与PFM信号大小的关系。确定了畴形核对压电响应迟滞回线的作用。
