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arXiv 1306.3223cond-mat.str-elcond-mat.mes-hallcond-mat.supr-con
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电子拓扑绝缘体保持表面态的带隙对称性

Gapped Symmetry Preserving Surface-State for the Electron Topological Insulator

Chong Wang, Andrew C. Potter, T. Senthil

摘要:

具有电荷守恒和时间反转对称性的三维电子拓扑绝缘体(TI)不可能具有保持对称性的平凡绝缘表面。它通常隐含地假设,如果TI表面保持两种对称性,那么它必须是无间隙的。在这里,我们表明,它是可能的TI表面是有间隙的和保序的,以牺牲表面拓扑秩序。与类似的玻色子拓扑绝缘体相比,这种对称表面拓扑序本质上是非阿贝尔的。我们表明,表面拓扑秩序提供了一个完整的非微扰定义的电子TI,超越了自由粒子的带结构图片,并可以提供一个有用的角度研究强相关的拓扑莫特绝缘体。

英文摘要:

It is well known that the 3D electronic topological insulator (TI) with charge-conservation and time-reversal symmetry cannot have a trivial insulating surface that preserves symmetry. It is often implicitly assumed that if the TI surface preserves both symmetries then it must be gapless. Here we show that it is possible for the TI surface to be both gapped and symmetry-preserving, at the expense of having surface-topological order. In contrast to analogous bosonic topological insulators, this symmetric surface topological order is intrinsically non-Abelian. We show that the surface-topological order provides a complete non-perturbative definition of the electron TI that transcends a free-particle band-structure picture, and could provide a useful perspective for studying strongly correlated topological Mott insulators.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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