arXivDaily arXiv每日学术速递 周一至周五更新
arXiv周末暂无论文更新,休息一下吧,周末愉快~~
arXiv 1306.0681cond-mat.mes-hall
收藏

材料缺陷对电流驱动涡旋畴壁迁移率的影响

Influence of material defects on current-driven vortex domain wall mobility

J. Leliaert, B. Van de Wiele, A. Vansteenkiste, L. Laurson, G. Durin, L. Dupré, B. Van Waeyenberge

摘要:

自旋电子器件的许多未来概念是基于磁畴壁通过纳米线的电流驱动运动。因此,需要对畴壁迁移率有一个透彻的了解。然而,驱动畴壁的自旋转移力矩的非绝热分量的大小今天仍然有争议,因为各种实验方法产生了很大范围的非绝热性程度的值。引人注目的是,基于磁性纳米线中的涡旋畴壁运动的实验始终导致与其他方法相比更低的值。基于微磁模拟在这方面的贡献,我们可以归因于这种差异的影响,分布的障碍,极大地影响了涡旋畴壁的流动性,但最经常不考虑在模型中采用提取的nonadiabaticity的程度。

英文摘要:

Many future concepts for spintronic devices are based on the current-driven motion of magnetic domain walls through nanowires. Consequently a thorough understanding of the domain wall mobility is required. However, the magnitude of the nonadiabatic component of the spin-transfer torque driving the domain wall is still debated today as various experimental methods give rise to a large range of values for the degree of nonadiabaticity. Strikingly, experiments based on vortex domain wall motion in magnetic nanowires consistently result in lower values compared to other methods. Based on the micromagnetic simulations presented in this contribution we can attribute this discrepancy to the influence of distributed disorder which vastly affects the vortex domain wall mobility, but is most often not taken into account in the models adopted to extract the degree of nonadiabaticity.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑