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arXiv 1306.0379cond-mat.mes-hall
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石墨烯导电性中的滞后现象

Hysteretic phenomena in graphene's conductivity

A. I. Kurchak, A. N. Morozovska, M. V. Strikha

摘要:

提出了一种不同性质的衬底上的石墨烯沟道电阻率滞后的竞争机制的模型,该机制依赖于栅极电压-直接机制(由表面和界面上具有偶极矩的吸附物引起)和反向机制(由石墨烯的自由载流子捕获到石墨烯-衬底界面上的局域态上引起)。可能的歧视,这两个通道的栅极电压扫描速率的变化进行了讨论。我们的理论预测与文献中的实验数据有很好的相关性。

英文摘要:

A model for the rival mechanisms of hysteresis in graphene channel resistivity on a substrate of different nature dependence on a gate voltage - a direct one (caused by adsorbates with dipole moment on surface and interface) and an inverse one (caused by capture of free carriers from graphene onto localized states on graphene-substrate interface) is proposed. Possible discrimination of these two channels by variation of the gate voltage sweep rate is discussed. Our theory predictions are in good correlation with experimental data, available in literature.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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