Transport gap and hysteretic behavior of the Ising quantum Hall ferromagnets in Landau levels $\left\vert N\right\vert >0$ of bilayer graphene

Evidence of orbital ferromagnetism in twisted bilayer graphene aligned to hexagonal boron nitride

We have previously reported ferromagnetism evinced by a large hysteretic anomalous Hall effect in twisted bilayer graphene (tBLG). Subsequent measurements of a quantized Hall resistance and small longitudinal resistance confirmed that this magnetic state is a Chern insulator. Here we report that, when tilting the sample in an external magnetic field, the ferromagnetism is highly anisotropic. Because spin-orbit coupling is negligible in graphene such anisotropy is unlikely to come from spin, but rather favors theories in which the ferromagnetism is orbital. We know of no other case in which fer…

Resistance Spikes at Transitions between Quantum Hall Ferromagnets

We report a new manifestation of first-order magnetic transitions in two-dimensional electron systems. This phenomenon occurs in aluminum arsenide quantum wells with sufficiently low carrier densities and appears as a set of hysteretic spikes in the resistance of a sample placed in crossed parallel and perpendicular magnetic fields, each spike occurring at the transition between states with different partial magnetizations. Our experiments thus indicate that the presence of magnetic domains at the transition starkly increases dissipation, an effect also suspected in other ferromagnetic materia…

Spin transport through a single self-assembled InAs quantum dot with ferromagnetic leads

We have fabricated a lateral double barrier magnetic tunnel junction (MTJ) which consists of a single self-assembled InAs quantum dot (QD) with ferromagnetic Co leads. The MTJ shows clear hysteretic tunnel magnetoresistance (TMR) effect, which is evidence for spin transport through a single semiconductor QD. The TMR ratio and the curve shapes are varied by changing the gate voltage.

Hysteretic phenomena in a 2DEG in quantum Hall effect regime studied in a transport experiment

We investigated experimentally non-equilibrium state of a two-dimensional electron gas (2DEG) in the quantum Hall effect (QHE) regime, studying the hysteresis of magnetoresistance of a 2DEG with a constriction. The large amplitude of the hysteresis enabled us to make the consistent phenomenological description of the hysteresis. We studied the dependence on the magnetic field sweep prehistory (minor loop measurements), recovered the anhysteretic curve, and studied the time dependence of the magnetoresistance. We showed that the hysteresis of magnetoresistance of a 2DEG in the QHE regime has si…

Quantum Hall Ferromagnetism in a Two-Dimensional Electron System

Experiments on a nearly spin degenerate two-dimensional electron system reveals unusual hysteretic and relaxational transport in the fractional quantum Hall effect regime. The transition between the spin-polarized (with fill fraction $ν= 1/3$) and spin-unpolarized ($ν= 2/5$) states is accompanied by a complicated series of hysteresis loops reminiscent of a classical ferromagnet. In correlation with the hysteresis, magnetoresistance can either grow or decay logarithmically in time with remarkable persistence and does not saturate. In contrast to the established models of relaxation, the relaxat…

Gate-Tunable Spin Transport and Giant Electroresistance in Ferromagnetic Graphene Vertical Heterostructures

We investigate spin transport through ferromagnetic graphene vertical heterostructures where a sandwiched tunneling layer is either a normal or ferroelectric insulator. We show that the spin-polarization of the tunneling current is electronically controlled via gate voltages. We also demonstrate that the tunneling current of Dirac fermions can be prohibited when the spin configuration of ferromagnetic graphene sheets is opposite. The giant electroresistance can thus be developed by using the proposed heterostructure in this study. The effects of temperature on the spin transport and the giant …

Ising quantum Hall ferromagnetism in Landau levels $\left\vert N\right\vert \geq 1$ of bilayer graphene

A magnetic field applied perpendicularly to the chiral two-dimensional electron gas (C2DEG)\ in a Bernal-stacked bilayer graphene quantizes the kinetic energy into a discrete set of Landau levels $N=0,\pm 1,\pm 2,...$ While Landau level $N=0$ is eighfold degenerate, higher Landau levels ($ \left\vert N\right\vert \geq 1$) are fourfold degenerate when counting spin and valley degrees of freedom. In this work, the Hartree-Fock approximation is used to study the phase diagram of the C2DEG at integer fillings $ \widetilde{ν}=1,2,3$ of these higher Landau levels. At these filling factors, the C2DEG…

Single-spin polaron memory effect

The single-spin memory effect is considered within a minimal polaron model describing a single-level quantum dot interacting with a vibron and weakly coupled to ferromagnetic leads. We show that in the case of strong electron-vibron and Coulomb interactions the rate of spontaneous quantum switching between two spin states is suppressed at zero bias voltage, but can be tuned through a wide range of finite switching timescales upon changing the bias. We further find that such junctions exhibit hysteretic behavior enabling controlled switching of a spin state. Spin lifetime, current and spin pola…

Transport Coefficients of Dirac Ferromagnet: Effects of Vertex Corrections

As a strongly spin-orbit coupled metallic model with ferromagnetism, we have considered an extended Stoner model to the relativistic regime, named Dirac ferromagnet in three dimensions. In the previous paper~[Phys. Rev. B 90, 214418 (2014)], we studied the transport properties giving rise to the anisotropic magnetoresistance~(AMR) and the anomalous Hall effect~(AHE) with the impurity potential being taken into account only as the self-energy. The effects of the vertex corrections~(VCs) to AMR and AHE are reported in this paper. AMR is found not to change quantitatively when the VCs is consider…

Heat-driven spin transport in a ferromagnetic metal

As a non-magnetic heavy metal is attached to a ferromagnet, a vertically flowing heat-driven spin current is converted to a transverse electric voltage, which is known as the longitudinal spin Seebeck effect (SSE). If the ferromagnet is a metal, this voltage is also accompanied by voltages from two other sources, i.e. the anomalous Nernst effect in both the ferromagnet and the proximity-induced ferromagnetic boundary layer. By properly identifying and carefully separating those different effects, we find that in this pure spin current circuit the additional spin current drawn by the heavy meta…

Magnetoresistance of vertical Co-graphene-NiFe junctions controlled by charge transfer and proximity-induced spin splitting in graphene

Graphene is hailed as an ideal material for spintronics due to weak intrinsic spin-orbit interaction that facilitates lateral spin transport and tunability of its electronic properties, including a possibility to induce magnetism in graphene. Another promising application of graphene is related to its use as a spacer separating ferromagnetic metals (FMs) in vertical magnetoresistive devices, the most prominent class of spintronic devices widely used as magnetic sensors. In particular, few-layer graphene was predicted to act as a perfect spin filter. Here we show that the role of graphene in su…

魔角扭曲双层石墨烯中半莫尔填充下的自旋轨道驱动铁磁性

Spin-orbit driven ferromagnetism at half moiré filling in magic-angle twisted bilayer graphene

本文研究魔角扭曲双层石墨烯与WSe₂界面中电子关联与自旋轨道耦合的协同作用，发现SOC将关联绝缘态转变为铁磁体，并实现磁序的电场和磁场调控，为工程化莫尔带拓扑性质提供了有效手段。