高质量石墨烯/h-BN器件的热激活滞后
Thermo Activated Hysteresis on High Quality Graphene/h-BN Devices
摘要：
我们报告了高质量石墨烯/h-BN器件的栅极电阻滞后。我们观察到一个热激活的滞后行为的电阻作为施加的栅极电压的函数在温度高于375 K。为了研究滞后现象的起源，我们设计了涉及石墨烯/h-BN器件的异质结构，其具有不同的底层衬底，例如：SiO2/Si和石墨;其中重掺杂的硅和石墨分别用作背栅电极。显示的电阻的栅极滞后行为是存在的，只有在与h-BN/SiO2接口的设备，是依赖于所施加的栅极电场和扫描速率的方向。最后，我们提出了一个唯象模型，它捕获了我们所有的研究结果的基础上被困在h-BN/SiO2的电荷。当然，石墨烯电阻的这种滞后行为代表了石墨烯器件在高温下应用的技术问题，但相反，它可以为数字电子和石墨烯存储器件的应用开辟新的途径。
英文摘要：
We report on gate hysteresis in resistance on high quality graphene/h-BN devices. We observe a thermal activated hysteretic behavior in resistance as a function of the applied gate voltage at temperatures above 375K. In order to investigate the origin of the hysteretic phenomenon, we design heterostructures involving graphene/h-BN devices with different underlying substrates such as: SiO2/Si and graphite; where heavily doped silicon and graphite are used as a back gate electrodes, respectively. The gate hysteretic behavior of the resistance shows to be present only in devices with an h-BN/SiO2 interface and is dependent on the orientation of the applied gate electric field and sweep rate. Finally, we suggest a phenomenological model, which captures all of our findings based on charges trapped at the h-BN/SiO2. Certainly, such hysteretic behavior in graphene resistance represents a technological problem for the application of graphene devices at high temperatures, but conversely, it can open new routes for applications on digital electronics and graphene memory devices.
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