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arXiv 1303.4755physics.optics
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用于近红外和THz信号精确定时的超快晶体管探测器

Ultra-fast transistor-based detectors for precise timing of near infrared and THz signals

S. Preu, M. Mittendorff, S. Winnerl, H. Lu, A. C. Gossard, H. B. Weber

摘要:

一整类双色实验都涉及到强烈的短太赫兹辐射脉冲。非常需要一种灵敏并且能够同时分辨近红外和太赫兹脉冲的快速检测器。在这里,我们提出了这种类型的第一个探测器。检测器元件是在室温下操作的GaAs基场效应晶体管。太赫兹探测成功地证明了高达4.9太赫兹的频率。THz探测时间常数小于30 ps,光学时间常数为150 ps。该探测器非常适合光学和太赫兹脉冲的精确,同时分辨率,以及高达数十千瓦峰值功率水平的高功率太赫兹脉冲的脉冲表征。该探测器的动态范围高达65 $\pm$ 3 dB/ $\sqrt{Hz}$,能够应用于各种实验和设置,也包括桌面系统。

英文摘要:

A whole class of two-color experiments involves intense, short Terahertz radiation pulses. A fast detector that is sensitive and able to resolve both near-infrared and Terahertz pulses at the same time is highly desirable. Here we present the first detector of this kind. The detector element is a GaAs-based field effect transistor operated at room temperature. THz detection is successfully demonstrated at frequencies up to 4.9 THz. The THz detection time constant is shorter than 30 ps, the optical time constant is 150 ps. This detector is ideally suited for precise, simultaneous resolution of optical and THz pulses and for pulse characterization of high-power THz pulses up to tens of kW peak power levels. The dynamic range of the detector was as large as 65 $\pm$ 3 dB/$\sqrt{Hz}$, enabling applications in a large variety of experiments and setups, also including table-top systems.

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