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arXiv 1302.4145cond-mat.mes-hall
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拓扑绝缘体表面的光学电导率

Optical conductivity for the surface of a Topological Insulator

D. Schmeltzer, K. Ziegler

摘要:

考虑了拓扑绝缘体表面激发的电导率与化学势和无序度的函数关系。由于时间反演对称性,手性金属表面态被保护免于无序。这允许使用平均的单粒子格林函数来计算光学电导率。我们计算有限无序极限下的电导率。我们发现电导率作为化学势$μ$和频率$Ω$的函数由普适值$σ(Ω>2μ)= \frac{e^2 π}{8h}$给出。对于服从$k_{F}l>1$的频率$Ω< μ$和弹性平均自由程$l_{el}=vτ$,我们得到电导率由$σ(Ω<2|μ|)=\frac{e^2}{2h}\frac{k_{F}l_{el}}{(Ωτ)^2+1}$给出。在零无序的极限,我们发现$σ(μ\neq0,Ω, k_{F}l\rightarrow \infty)=\frac{e^2 π}{2h}|μ|δ(Ω)$。

英文摘要:

The optical conductivity for the surface excitations for a Topological Insulator as a function of the chemical potential and disorder is considered. Due to the time reversal symmetry the chiral metallic surface states are protected against disorder. This allow to use the averaged single particle Green's function to compute the optical conductivity. We compute the conductivity in the limit of a finite disorder. We find that the conductivity as a function of the chemical potential $μ$ and frequency $Ω$ is given by the universal value $σ(Ω>2μ)= \frac{e^2 π}{8h}$. For frequencies $Ω< μ$ and elastic mean free path $l_{el}=vτ$ which obey $k_{F}l>1$ we obtain the conductivity is given by $σ(Ω<2|μ|)=\frac{e^2}{2h}\frac{k_{F}l_{el}}{(Ωτ)^2+1}$. In the limit of zero disorder we find $σ(μ\neq0,Ω, k_{F}l\rightarrow \infty)=\frac{e^2 π}{2h}|μ|δ(Ω)$.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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