In this paper some specific issues related to point defects in GaAs nanowires are addressed with the help of density functional theory calculations. These issues mainly arise from the growth of nanowires under conditions different from those used for thin films or bulk GaAs, such as the co-existence of zincblende and wurtzite polytypes, the use of gold particles as catalyst, and the arsenic-limited growth regime. Hence, we carry out density-functional calculations for As vacancies, Ga_As antisites, and Au impurities in ZB and WZ GaAs crystals. Our results show that As vacancies can diffuse within in a ZB GaAs crystal with migration barriers of ~1.9 eV. Within WZ GaAs, As vacancy diffusion is found to be anisotropic, with low barriers of 1.60 up to 1.79 eV (depending on doping conditions) in the ab-plane, while there are higher barriers of 2.07 to 2.44 eV to diffuse along the c-axis. The formation energy of Au impurities is found to be generally much lower than those of arsenic vacancies or Ga_As antisites. Thus, Au impurities will be the dominant defects formed in Au-catalyzed nanowire growth. Moreover, we find that it is energetically more favorable by 1 to 2 eV for an Au impurity to replace a lattice Ga atom than a lattice As atom in GaAs. An Au substitutional defect for a lattice Ga atom in ZB GaAs is found to create a charge transfer level in the lower half of the band gap. While our calculations locate this level at E_v + 0.22eV, taking into account the inaccuracy of the density functional that ought to be corrected by a downshift of E_v by about 0.2eV results in good agreement with the experimental result of E_v + 0.4eV.
Half-metallic ferrimagnetism in the [Sc$_{1-x}$V$_x$]C and [Sc$_{1-x} $V$_x$]Si alloys adopting the zinc-blende and wurtzite structures from first-principles
采用第一性原理计算方法研究了[Sc $_{1-x}$ V $_x$ ]C和[Sc $_{1-x}$ V $_x$ ]Si合金的结构、电子和磁性.在平衡岩盐结构中，所有合金都是无磁性的。锌钛矿和纤锌矿结构相对于总能量退化。对于所有的浓度，在这些晶格结构中的合金是半金属与位于自旋下降带的间隙。总自旋矩遵循Slater Pauling行为，在理想ScC和ScSi合金的-1 $μ_B$和理想VC和VSi合金的+1 $μ_B$之间线性变化。对于中等浓度的V和Sc原子具有反平行的自旋磁矩，化合物是半金属亚铁磁体。在临界浓度下，[Sc $_{0.5}$ V $_{0.5}$ ]C和[Sc $_{0.5}$ V $_{0.5}$ ]Si合金的总自旋-磁矩为零，但C基合金表现出半导体行为，而Si基合金则是半金属反铁磁体。
2D ferroelectric narrow-bandgap semiconductor Wurtzite' type alpha-In2Se3 and its silicon-compatible growth
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences（中国科学院金属研究所沈阳材料科学国家实验室）；School of Materials Science and Engineering, University of Science and Technology of China（中国科学技术大学材料科学与工程学院）；School of Physical Science and Technology, Jiangsu Key Laboratory of Frontier Material Physics and Devices, Soochow University（苏州大学江苏省前沿材料物理与器件重点实验室物理科学与技术学院）；Collaborative Innovation Center of Extreme Optics, Shanxi University（山西大学极端光学协同创新中心）；Center for Quantum Matter, School of Physics, Zhejiang University（浙江大学物理学院量子物质研究中心）；Department of Mechanical Engineering, The University of Hong Kong（香港大学机械工程系）
Systematic comparison of approximations and functionals in first-principle calculations of aluminum-based III-V ferroelectric nitrides
University of Arkansas（阿肯色大学）；Guangdong Technion – Israel Institute of Technology（广东以色列理工学院）；Colorado School of Mines（科罗拉多矿业学院）；National Laboratory of the Rockies（落基山国家实验室）；Tel Aviv University（特拉维夫大学）；Université Paris-Saclay（巴黎萨克雷大学）；CentraleSupélec（中央苏佩雷勒高等电信学院）
First-principles prediction of structure, energetics, formation enthalpy, elastic constants, polarization, and piezoelectric constants of AlN, GaN, and InN: comparison of local and gradient-corrected density-functional theory
Hybrid-Functional Calculations of Electronic Structure and Phase Stability of MO (M = Zn, Cd, Be, Mg, Ca, Sr, Ba) and Related Ternary Alloy M$_x$Zn$_{1-x}$O
Spatially-resolved luminescence and crystal structure of single core-shell nanowires measured in the as-grown geometry
我们报道了单个的、生长态的核-多壳GaAs/In $_{0.15}$ Ga $_{0.85}$ As/GaAs/AlAs/GaAs纳米线的结构和光学性质之间的直接相关性。通过分子束外延在预先图案化的Si（111）衬底上制造，在一排良好分离的成核位置上，可以在生长的几何形状中访问单个纳米线。通过同步辐射纳米探针X射线衍射技术监测轴向111布拉格反射，揭示了沿纳米线生长轴的多型体分布。对于相同的纳米线，空间分辨的发射特性，通过阴极发光高光谱线扫描在扫描电子显微镜。相关的两个测量，我们揭示了一个蓝移的壳量子阱发射能量结合的发射强度增加的片段表现出的混合结构的交替纤锌矿和锌的堆叠相比，纯晶体多型体。这种混合结构的存在下，独立地证实了横截面透射电子显微镜。
