We systematically study the pristine and doped chromium arsenide (CrAs) in six different crystal structures to investigate the structural, magnetic, and optical properties for real applications by first-principles calculations. First, we found that the ground-state structure is an orthorhombic MnP-type structure with antiferromagnetic spin order. The rocksalt structure is an low-energy metastable phase and a ferromagnetic metal with high spin polarization at the Fermi level. Secondly, the NiAs structure and MnP structure have a higher absorption coefficient than other structures in the infrared region and ultraviolet region, respectively. In the visible light region, the wurtzite and zincblende structures are more transparent than other structures. At last, we found that Ti substitution of Cr and Te substitution of As can lead to a phase transition in ground-state structure and ground-state magnetic order, respectively. These results can promote the application of the CrAs system into spintronics.
We apply a method that combines the tight-binding approximation and the Lowdin down-folding procedure to evaluate the electronic band structure of the newly discovered pressure-induced superconductor CrAs. By integrating out all low-lying arsenic degrees of freedom, we derive an effective Hamiltonian model describing the Cr d bands near the Fermi level. We calculate and make predictions for the energy spectra, the Fermi surface, the density of states and transport and magnetic properties of this compound. Our results are consistent with local-density approximation calculations as well as they …
Recently the discovery of magnetic order in two-dimensional monolayer chromium trihalides opens the new research field in two-dimensional materials. We use first-principles calculations to systematically examine the doping effect of chalcogen on CrBr3. In the case of S-doping, four stable configurations, Cr2Br5S, Cr2Br4S2-A, Cr2Br4S2-B and Cr2Br3S3-A, are predicted to be ferromagnetic semiconductors. It is found that the new bands appearing in the original bandgap are made up of S-p and Cr-d-egorbits, lead to the obvious reduce of bandgap and the enhanced optical absorption in the visible rang…
We investigate the electronic properties of the (110) cross-sectional surface of Si-doped GaAs using first-principles techniques. We focus on doping configurations with an equal concentration of Si impurities in cationic and anionic sites, such as occurring in a self-compensating doping regime. In particular we study a bilayer of Si atoms uniformly distributed over two consecutive (001) atomic layers. The simulated cross-sectional scanning tunneling microscopy images show a bright signal at negative bias, which is strongly attenuated when the bias is reversed. This scenario is consistent with …
The archetypical strongly correlated Mott-phenomena compound V2O3 is known to show a paramagnetic metal-insulator transition driven by doping with chromium atoms and/or (negative) pressure. Via charge self-consistent density-functional theory+dynamical mean-field theory calculations we demonstrate that these two routes cannot be understood as equivalent. To this end, the explicit description of Cr-doped V2O3 by means of supercell calculations and the virtual crystal approximation is performed. Already the sole introduction of chromium's additional electron to the system is shown to modify the …
We apply hybrid density functional theory calculations to identify the formation energies and thermodynamic charge transition levels of native point defects, common impurities, and shallow dopants in BAs. We find that boron-related defects such as V_B, B_As, B_i-V_B complexes, and antisite pairs are the dominant intrinsic defects. Native BAs is expected to exhibit p-type conduction due to the acceptor-type characteristics of V_B and B_As. Among the common impurities we explored, we found that C substitutional defects and H interstitials have relatively low formation energies and are likely to …
To understand newly discovered superconductivity in Fe--based systems, we investigate electronic structure and magnetic properties of Fe$_{1+x}$Te using first--principles density functional calculations. While the undoped FeTe has the same Fermi surface nested at ($π,π$) as in Fe arsenides, doping by $\sim 0.5$ electrons reveals a novel square--type Fermi surface showing a strong ($π, 0$) nesting and leading to a different magnetic structure. Our result strongly supports the same mechanism of superconductivity in chalcogenides as in the arsenides, reconciling theory to existing experiments. Ca…
The effect of doping spinel LiMn2O4 with chromium and magnesium has been studied using the first-principles spin density functional theory within GGA (generalized gradient approximation) and GGA+U. We find that GGA and GGA+U give different ground states for pristine LiMn2O4 and same ground state for doped systems. For LiMn2O4 the body centered tetragonal phase was found to be the ground state structure using GGA and face centered orthorhombic using GGA+U, while for LiM0.5Mn1.5O4 (M= Cr or Mg) it was base centered monoclinic and for LiMMnO4 (M= Cr or Mg) it was body centered orthorhombic in bot…
Control of magnetic states by external factors has garnered a mainstream status in spintronic research for designing low power consumption and fast-response information storage and processing devices. Previously, magnetic-cation substitution is the conventional means to induce ferromagnetism in an intrinsic antiferromagnet. Theoretically, the anion-doping is proposed to be another effect means to change magnetic ground states. Here we demonstrate the synthesis of high-quality single-phase chromium oxynitride thin films using in-situ nitrogen doping. Unlike antiferromagnetic monoanionic chromiu…
The dilute magnetic semiconductors have promise in spin-based electronics applications due to their potential for ferromagnetic order at room temperature, and various unique switching and spin-dependent conductivity properties. However, the precise mechanism by which the transition-metal doping produces ferromagnetism has been controversial. Here we have studied a dilute magnetic semiconductor (5% manganese-doped gallium arsenide) with Bragg-reflection standing-wave hard X-ray angle-resolved photoemission spectroscopy, and resolved its electronic structure into element- and momentum- resolved …
We determine the fundamental electronic and optical properties of the high-thermal-conductivity III-V semiconductor boron arsenide (BAs) using density functional and many body perturbation theory including quasiparticle and spin-orbit coupling corrections. We find that the fundamental band gap is indirect with a value of 2.049 eV, while the minimum direct gap has a value of 4.135 eV. We calculate the carrier effective masses and report smaller values for the holes than the electrons, indicating higher hole mobility and easier p-type doping. The small difference between the static and high freq…
Platelet-like single crystals of the Ca(Fe1-xCox)2As2 series having lateral dimensions up to 15 mm and thickness up to 0.5 mm were obtained from the high temperature solution growth technique using Sn flux. Upon Co doping, the c-axis of the tetragonal unit cell decreases, while the a-axis shows a less significant variation. Pristine CaFe2As2 shows a combined spin-density-wave and structural transition near T = 166 K which gradually shifts to lower temperatures and splits with increasing Co-doping. Both transitions terminate abruptly at a critical Co-concentration of xc = 0.075. For x \geq 0.05…
Recently, boron arsenide (BAs) has been measured high thermal conductivity in the experiments, great encouraging for the low-power photoelectric devices. Therefore, in the present work, we have systematically investigated the direct and indirect optical absorptions of BAs and BSb and the doping effect of congeners by using first-principles calculations. We obtain the absorption onset corresponding to the value of indirect bandgap by considering the phonon-assisted second-order optical absorptions. And the redshift of absorption onset, enhancement and smoothness of optical absorptions spectra a…
CaCo$_{2-y}$As$_2$ is an unusual itinerant magnet with signatures of extreme magnetic frustration. The conditions for establishing magnetic order in such itinerant frustrated magnets, either by reducing frustration or increasing electronic correlations, is an open question. Here we use results from inelastic neutron scattering and magnetic susceptibility measurements and density functional theory calculations to show that hole doping in Ca(Co$_{1-x}$Fe$_{x}$)$_{2-y}$As$_{2}$ suppresses magnetic order by quenching the magnetic moment while maintaining the same level of magnetic frustration. The…
We report the synthesis and crystal structures of three new superconducting iron-platinum arsenides (CaFe1-xPtxAs)10Pt4-yAs8 (x = 0-0.15, y = 0-0.4). The structures are stacking variants of FeAs- and slightly puckered Pt4-yAs8-layers with square coordinated platinum separated by calcium-layers, respectively. Arsenic atoms in the Pt4-yAs8-layers form (As2)4- dumbbells according to Zintl's concept, providing charge balance in (Ca2+Fe2+As3-)10(Pt2+)3[(As2)4-]4. Superconductivity was observed at 13-35 K. We suggest that the highest Tc above 30 K occurs in the 1048 phase with clean FeAs-layers that…
The possibility to induce ferromagnetism and insulator to metal transitions in small A site cation manganites Ln_{1-x}Ca_xMnO_3 by rhodium doping is shown for the first time. Colossal magnetoresistance (CMR) properties are evidenced for a large compositional range (0.35 \leq x < 0.60). The ability of rhodium to induce such properties is compared to the results obtained by chromium and ruthenium doping. Models are proposed to explain this behavior.
Within the BaFe2As2 crystal lattice, we partially substitute thallium for barium and report the effects of interlayer coupling in Ba1-xTlxFe2As2 crystals. We demonstrate the unusual effects of magneto-elastic coupling and charge doping in this iron-arsenide material, whereby Neel temperature rises with small x, and then falls with additional x. Specifically, we find that Neel and structural transitions in BaFe2As2 (TN =Ts= 133 K) increase for x=0.05 (TN = 138 K, Ts = 140 K) from magnetization, heat capacity, resistivity, and neutron diffraction measurements. Evidence from single crystal X-ray …
The doping of wide gap semiconductors is an interesting problem both from the scientific and technological point of view. A well known example of this problem is the doping of Cu$_2$O. The only element which has produced an order of magnitude increase in the conductivity of Cu$_2$O bulk samples is chlorine, as previously reported by us and others. However the solar cells produced with this material do not show any improvement in performances because of the reduction in the minority carrier diffusion length. In this paper we investigate the effect of other impurities in order to check their pos…
ThCr2Si2-type phosphide ACo2P2 (A=Rare earth elements) has the same structure as iron arsenides, but their magnetic behaviors are quite distinct. In this paper, we for the first time grew a series of La1-xCexCo2P2 single crystals (x=0.0 to1.0), and made structural and magnetic characterizations. This allows us to carry out a careful investigation on the evolution of magnetism with cerium content and build a magnetic phase diagram. We found that the introduction of cerium induces a rapid decrease of c-axis and a change from ferromagnetic (FM) to antiferromagnetic (AFM) states. By employing firs…
Recent realizations of intrinsic magnetic order in truly two-dimensional materials have opened new avenues in the fundamental knowledge and spintronic applications. Here we develop an anisotropic Heisenberg model with relativistic exchange interactions that are obtained from the first-principles calculations. We demonstrate the crucial importance of magnetic interactions beyond the first-neighbour to qualitatively and quantitatively reproduce the experimental results. Once we ascertain the predictive capacity of the model for chromium trihalides and CrGeTe$_3$, we investigate the feasibility o…
