本文研究了三维拓扑绝缘体Bi 2 Te 2Se的复杂光学性质随温度的变化关系，并在室温下研究了压力对a-b平面光偏振的影响.该材料在295 K下具有300 meV的体光学带隙，显示出半导体特性。除了在平面中观察到的两个预期的红外活性振动之外，还有额外的精细结构，这归因于简并性的去除或由于无序而激活的拉曼模式。还观察到位于200 cm^{-1}处的强杂质带。在光学带隙处和光学带隙上方，发现几个带间色散具有很强的温度和压力依赖性。随着温度的降低，这些特征的强度和硬度增加。压力的应用导致了一个非常突然的关闭的差距超过8 GPa，并强烈修改中红外光谱范围内的带间反射。虽然从头计算未能预测的崩溃的差距，他们成功地描述了在环境压力下的带隙的大小，和大小和形状的光学电导率。
英文摘要：
The temperature dependence of the complex optical properties of the three-dimensional topological insulator Bi2Te2Se is reported for light polarized in the a-b planes at ambient pressure, as well as the effects of pressure at room temperature. This material displays a semiconducting character with a bulk optical gap of 300 meV at 295 K. In addition to the two expected infrared-active vibrations observed in the planes, there is additional fine structure that is attributed to either the removal of degeneracy or the activation of Raman modes due to disorder. A strong impurity band located at 200 cm^{-1} is also observed. At and just above the optical gap, several interband absorptions are found to show a strong temperature and pressure dependence. As the temperature is lowered these features increase in strength and harden. The application of pressure leads to a very abrupt closing of the gap above 8 GPa, and strongly modifies the interband absorptions in the mid-infrared spectral range. While ab initio calculations fail to predict the collapse of the gap, they do successfully describe the size of the band gap at ambient pressure, and the magnitude and shape of the optical conductivity.
Extreme high-pressure distortion phase of Bi2MoO6 in Bi2Mo0.94W0.06O6 at ambient pressure for augmented octahedral rotations and metal-oxide charge transport
First-principles calculations of the structural, elastic and electronic properties of MNxC1-x (M=Ti, Zr, Hf; 0<x<1) carbonitrides at ambient and elevated hydrostatic pressure
Comment on arXiv:1807.08572, "Coexistence of Diamagnetism and Vanishingly Small Electrical Resistance at Ambient Temperature and Pressure in Nanostructures"
Exotic Dirac Cones on the Band Structure of $α$-STF$_2$I$_3$ at Ambient Temperature and Pressure
准二维分子半金属导体$α$ I $_3$与$α$ I $_3$是同构的，后者具有独特的能带结构，在高压下表现为狄拉克锥的零带隙态，而前者的能带结构由于所有施主位的严重无序而一直难以捉摸.为了解释$α$ -STF $_2$ I $_3$的能带结构，提出了一种基于296 K和1 bar下观察到的原子参数的理论方法。结果表明，STF盐在常压和常温下都具有Dirac锥的能带结构，这将有助于进一步的实验研究.利用扩展的Hückel方法，我们证明了$α$ I $_3$的Dirac点关于时间反演不变动量（TRIM）对称排列.这种新颖的狄拉克锥，其中的导带和价带之间的能量差具有相当大的各向异性，澄清在TRIM的波函数的奇偶性。我们提出了目前的$α$ -STF $_2$ I $_3$的电导率测量，预计将显示出大的各向异性作为本狄拉克电子的特征。
Ambient-Pressure Organic Dirac Electron State in $α$-(BETS)$_2$AuCl$_2$
Graduate School of Science and Engineering, Saitama University（埼玉大学理工学研究科）；Research and Development Bureau, Saitama University（埼玉大学研发局）；Institute for Solid State Physics, University of Tokyo（东京大学固体物理研究所）
Direct Observation of Decoupled Structural and Electronic Transitions and an Ambient Pressure Monoclinic-Like Metallic Phase of VO$_2$
本文报道了用电子能谱、光电子能谱学和显微镜同时测量VO $_2$金属-绝缘体转变的结构和电子成分。我们表明，这些演变在不同的温度范围内，并分开一个不寻常的单斜类金属相。我们的研究结果提供了确凿的证据，新的单斜金属相，最近确定在高压和非平衡测量，是在环境压力下的热力学转变，我们讨论了这些意见的性质上的MIT VO $_2$的影响。
Crystallization of pristine cubic ice from liquid at ambient pressure
University College London（伦敦大学学院）；ISIS Neutron and Muon Source, Science and Technology Facilities Council, Rutherford Appleton Laboratory（ISIS中子与μ子源，科学与技术设施委员会，拉瑟福德阿普尔顿实验室）；Uppsala Universitet（乌普萨拉大学）；University of Oxford（牛津大学）；The University of Manchester（曼彻斯特大学）
研究立方冰 Ic 能否从液态直接形成等问题，通过冷却介孔二氧化硅内水溶液在常压下获得原始立方冰 Ic，利用中子散射技术证明其可重复形成且为唯一稳定晶相，揭示该多晶型物在自然和合成过程中作用更重要。
Bridging ambient- and high-pressure superconductivity in La$_2$LnNi$_2$O$_7$ films
The University of Tokyo（东京大学）；RIKEN Center for Emergent Matter Science (CEMS)（理化学研究所 emergent matter science 中心）；Institute for Solid State Physics, The University of Tokyo（东京大学固体物理研究所）；Institute for Materials Research (IMR), Tohoku University（东北大学材料科学研究所）；Advanced Institute for Materials Research (WPI-AIMR), Tohoku University（东北大学先进材料研究高等研究院）；Tokyo College, The University of Tokyo（东京大学东京学院）
Ambient and Pressure Dependent Superconductivity with Hydrogen Storage Potential in Quaternary Hydride LiMgZr2H12: A Comprehensive First-principles Insights
Department of Physics, University of Rajshahi（拉杰沙希大学物理系）
Superhydrides on the way to ambient pressure: weak localization and persistent X-ray photoconductivity in BaSiH$_{8}$
Center for High Pressure Science & Technology Advanced Research（高压力科学与技术先进研究中心）；Hochfeld-Magnetlabor Dresden (HLD-EMFL) and Würzburg-Dresden Cluster of Excellence ctd.qmat, Helmholtz-Zentrum Dresden-Rossendorf（德累斯顿强磁场实验室 (HLD-EMFL) 和维尔茨堡-德累斯顿卓越集群 ctd.qmat，德累斯顿罗森多夫亥姆霍兹中心）；Japan Synchrotron Radiation Research Institute (JASRI)（日本同步辐射研究所 (JASRI)）；Center for Science and Technology under Extreme Conditions, Graduate School of Engineering Science, Osaka University（大阪大学工程科学研究极端条件科学与技术中心）；V. L. Ginzburg Center for High-Temperature Superconductivity and Quantum Materials（V. L. 金兹堡高温超导与量子材料中心）；National Research University Higher School of Economics（国立研究型大学高等经济大学）；Dipartimento di Fisica, Sapienza Università di Roma（罗马智慧大学物理系）；Department of Materials and Environmental Chemistry, Stockholm University（斯德哥尔摩大学材料与环境化学系）；Department of Electrotechnology, Faculty of Electrical Engineering, Czech Technical University in Prague（布拉格捷克理工大学电气工程学院电工技术系）；Elettra - Sincrotrone Trieste S.C.p.A.（的里雅斯特同步辐射中心 Elettra - Sincrotrone Trieste S.C.p.A.）；A.V. Shubnikov Institute of Crystallography of the Kurchatov Complex of Crystallography and Photonics (KKKiF)（库尔恰托夫晶体学与光子学复合体 A.V. 舒布尼科夫晶体学研究所 (KKKiF)）；Shanghai Advanced Research in Physical Sciences (SHARPS)（上海物理科学先进研究 (SHARPS)）；Center for High Pressure Science and Technology Advanced Research (HPSTAR)（高压力科学与技术先进研究中心 (HPSTAR)）
