MoS2 MOSFET沟道长度缩放
Channel Length Scaling of MoS2 MOSFETs
摘要：
在这篇文章中，我们研究了沟道长度从2 μm到50 nm范围内的双掺杂体（UTB）MoS 2二维（2D）晶体的电输运性质。我们比较了具有不同沟道厚度的MOSFET的短沟道行为，并揭示了MoS 2晶体管对短沟道效应的优越免疫力。我们没有观察到明显的短沟道效应的器件上的100 nm沟道长度（Lch）上制造的5 nm厚的二硫化钼2D晶体，即使使用300 nm厚的二氧化硅作为栅极电介质，并有一个电流开/关比高达~109。我们还观察到在短沟道器件的导通电流饱和与连续缩放由于载流子速度饱和。此外，我们揭示了短沟道MoS 2晶体管的性能限制是由Ni和MoS 2界面之间的肖特基势垒的大接触电阻所主导的，其中需要完全透明的接触来实现高性能的短沟道器件。
英文摘要：
In this article, we investigate electrical transport properties in ultrathin body (UTB) MoS2 two-dimensional (2D) crystals with channel lengths ranging from 2 μm down to 50 nm. We compare the short channel behavior of sets of MOSFETs with various channel thickness, and reveal the superior immunity to short channel effects of MoS2 transistors. We observe no obvious short channel effects on the device with 100 nm channel length (Lch) fabricated on a 5 nm thick MoS2 2D crystal even when using 300 nm thick SiO2 as gate dielectric, and has a current on/off ratio up to ~109. We also observe the on-current saturation at short channel devices with continuous scaling due to the carrier velocity saturation. Also, we reveal the performance limit of short channel MoS2 transistors is dominated by the large contact resistance from the Schottky barrier between Ni and MoS2 interface, where a fully transparent contact is needed to achieve a high-performance short channel device.
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