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arXiv 1209.1964cond-mat.mtrl-sci
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第一性原理研究VI族二硫属化合物单分子膜的内禀自旋霍尔效应

Intrinsic spin Hall effect in monolayers of group-VI dichalcogenides: A first-principles study

Wanxiang Feng, Yugui Yao, Wenguang Zhu, Jinjian Zhou, Wang Yao, Di Xiao

摘要:

采用密度泛函理论的第一性原理计算,研究了第六族过渡金属二硫属化物MX 2(M = Mo,W,X = S,Se)单分子膜的内禀自旋霍尔效应. MX2单分子膜是直接带隙半导体,具有位于六边形布里渊区的拐角处的两个简并谷。由于反转对称性破缺和强自旋轨道耦合,相反谷中的电荷载流子携带相反的Berry曲率和自旋矩,从而产生谷-和自旋-霍尔效应。由于在价带最大值处存在较大的自旋分裂,p掺杂样品的本征自旋霍尔电导(ISHC)远大于n掺杂样品的ISHC.我们还表明,ISHC在反转对称的散装dichalcogenides是一个数量级较小的单层相比。我们的研究结果表明,单层二硫属化合物作为一个理想的平台,集成valleytronics和spintronics。

英文摘要:

Using first-principles calculations within density functional theory, we investigate the intrinsic spin Hall effect in monolayers of group-VI transition-metal dichalcogenides MX2 (M = Mo, W and X = S, Se). MX2 monolayers are direct band-gap semiconductors with two degenerate valleys located at the corners of the hexagonal Brillouin zone. Because of the inversion symmetry breaking and the strong spin-orbit coupling, charge carriers in opposite valleys carry opposite Berry curvature and spin moment, giving rise to both a valley- and a spin-Hall effect. The intrinsic spin Hall conductivity (ISHC) in p-doped samples is found to be much larger than the ISHC in n-doped samples due to the large spin-splitting at the valence band maximum. We also show that the ISHC in inversion-symmetric bulk dichalcogenides is an order of magnitude smaller compared to monolayers. Our result demonstrates monolayer dichalcogenides as an ideal platform for the integration of valleytronics and spintronics.

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