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arXiv 1209.0798physics.plasm-phcond-mat.other
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模拟热致密物质的电子-离子势和离子-离子势:应用于laser加热或冲击压缩的Al和Si

Electron-ion and ion-ion potentials for modeling warm-dense-matter: applications to laser-heated or shock-compressed Al and Si

M. W. C. Dharma-wardana

摘要:

对相互作用U_{ij}(r)通过对分布函数(PDF)确定物质的热力学和线性输运性质,即,g_{ij}(r)。如果U_{ij}(r)可以直接用于通过经典模拟来预测材料性质,避免了多体波函数,则可以实现极大的简化。热致密物质(WDM)处于准平衡状态,在准平衡状态下,电子温度$T_e$与离子温度T_i不同,如激光加热或冲击压缩物质。电子PDF g_{ee}(r)作为扰动的离子被用来评估完全非本地交换相关校正的自由能,使用氢作为一个例子。本文以Al和Si为例,讨论了具有束缚核的离子的电子-离子势,并讨论了具有T_e \ne T_i的WDM的电子-离子势,它适用于短于电子-离子弛豫时间的时间。在某些情况下,电位发展为吸引区域,然后对于较高的$T_e$,变得排斥和“Yukawa样”。这些结果澄清了初始声子硬化和快速释放的起源。对势的冲击加热WDM显示,声子硬化不会发生在大多数这样的系统。定义有意义的准平衡静态输运系数与动态值一致的解决。通过将实验或理论σ(ω,T_i,T_e)外推到ω \to 0似乎得不到有意义的“静态电导率”,除非T_i \to T_e也是如此。本文用赝势、对势和经典积分方程计算了激光加热和冲击加热铝和硅的准静态电阻率R(T_i,T_e)。准静态磁导率在其温度演变中显示出明显的差异,但不是动态值的严格的ω \to 0极限。

英文摘要:

The pair-interactions U_{ij}(r) determine the thermodynamics and linear transport properties of matter via the pair-distribution functions (PDFs), i.e., g_{ij}(r). Great simplicity is achieved if U_{ij}(r) could be directly used to predict material properties via classical simulations, avoiding many-body wavefunctions. Warm dense matter (WDM) is encountered in quasi-equilibria where the electron temperature $T_e$ differs from the ion temperature T_i, as in laser-heated or in shock-compressed matter. The electron PDFs g_{ee}(r) as perturbed by the ions are used to evaluate fully non-local exchange-correlation corrections to the free energy, using Hydrogen as an example. Electron-ion potentials for ions with a bound core are discussed with Al and Si as examples, for WDM with T_e \ne T_i, and valid for times shorter than the electron-ion relaxation time. In some cases the potentials develop attractive regions, and then become repulsive and `Yukawa-like' for higher $T_e$. These results clarify the origin of initial phonon-hardening and rapid release. Pair-potentials for shock-heated WDM show that phonon hardening would not occur in most such systems. Defining meaningful quasi-equilibrium static transport coefficients consistent with the dynamic values is addressed. There seems to be no meaningful `static conductivity' obtainable by extrapolating experimental or theoretical σ(ω, T_i, T_e) to ω\to 0, unless T_i \to T_e as well. Illustrative calculations of quasi-static resistivities R(T_i,T_e) of laser-heated as well as shock-heated Aluminum and Silicon are presented using our pseudopotentials, pair-potentials and classical integral equations. The quasi-static resistivities display clear differences in their temperature evolutions, but are not the strict ω\to 0 limits of the dynamic values.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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